TSM9N50CZC0

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)(Ω) 0.85 @ VGS =10V ID (A) 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● ● Low RDS(ON) 0.85Ω @ VGS = 10V Low gate charge typical @ 63nC (Typ.) Low Crss typical @ 120pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM9N50CZ C0 TSM9N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current* Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) o Total Power Dissipation @Tc = 25 C Operating Junction Temperature Storage Temperature Range Ta = 25ºC Ta = 100ºC Symbol VDS VGS ID IDM EAS IAR EAR PDTOT TJ TSTG Limit 500 ±30 9 5 .1 36 510 8 13 125 150 -55 to +150 Unit V V A A A mJ A mJ W ºC o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec 1/7 Symbol RӨJC RӨJA Limit 3.1 62.5 Unit o o C/W C/W Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 4.8A VDS = VGS, ID = 250uA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 50V, ID = 4.8A Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd Ciss Coss Crss td(on) Min 500 -2.0 --5.9 --------------- Typ -0.75 ----63 9.3 32 1300 310 120 14 23 49 20 --460 4.2 Max -0.85 4.0 25 ±100 -----------9 2.0 970 8.9 Unit V Ω V uA nA S Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 400V, ID = 9A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source Drain Diode Source-drain Current Diode Forward Voltage Reverse Recovery Time IS = 9A, VGS = 0V VGS = 0V, IS = 9A, dIF/dt = 100A/us VDD = 250V, ID = 9A, RG = 9.1Ω tr td(off) tf ISD VSD t fr nS A V nS uC Reverse Recovery Charge Q fr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=9A, L=5.7mH, RG=9.1Ω, Starting TJ=25ºC 3. Pulse test: pulse width ≤300uS, duty cycle ≤2% 4. Essentially Independent of Operating Temperature 2/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 5/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 6/7 Version: Preliminary Preliminary TSM9N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: Preliminary