TSS42U_10

TSS42U_10

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TSS42U_10 - 0.2 Amp Surface Mount Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TSS42U_10 数据手册
TSS42U/43U 0.2 Amp Surface Mount Schottky Barrier Diode Small Signal Diode 0603 W L T C Features Designed for mounting on small surface Extremely thin / leadless package Low capacitance Low forward voltage drop Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code D Unit (mm) Dimensions L Unit (inch) Min 0.063 0.031 0.028 Min 1.60 0.80 0.70 Max 1.80 1.00 0.85 Max 0.071 0.039 0.033 Mechanical Data Case : 0603 Standard package, molded plastic Terminals: Gold plated, solderable per MIL-STD-750, Method 2026. High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight :0.003 gram (appeox.) W T C D 0.45 (Typical) 0.7 (Typical) 0.018 (Typical) 0.27 (Typical) Pin Configuration Ordering Information Suggested Footprint Dimensions Part No. TSS42U TSS43U Package 0603 0603 Packing 4K / 7" Reel 4K / 7" Reel Marking Packing code BD BE RZ / RZG RZ / RZG Y (x2) X (x2) X1 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Dimensions X1 Y X Value (in mm) 2.70 0.80 1.37 Maximum Ratings Type Number Repetitive Peak Reverse Voltage Reverse Voltage RMS reverse Voltage Average Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 8.3 mS ( Singal Half -wave ) Power Dissipation Forward Voltage TS42U / 43U, IF = 200mA TS42U, IF = 10mA TS42U, IF = 50mA TS43U, IF = 2mA TS43U, IF = 15mA Reverse Leakage Current Reverse Recovery Time (Note 2.) Thermal Resistance (Junction to Ambient) Operation Junction Temperature VR = 25V IR CJ Trr RθJA TJ Typical Capacitance between terminals (VR = 1V, f = 1.0MHZ) VF PD 150 1.00 0.40 0.65 0.33 0.45 0.5 10 5 667 125 uA pF nS °C/W °C °C V mW IFSM 4.0 A Symbol VRRM VR VR(RMS) IO IFRM Value 30 30 21 200 500 Units V V V mA mA -55 to + 125 Storage Temperature Range TJ, TSTG Notes: 1. The suggested Footprint dimensions have been provided for reference only, as actual pad layouts may vary despending on application. 2. Test conditions: IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 Ω Version :B10 RATINGS AND CHARACTERISTIC CURVES (TSS42U/TSS43U) Version :B10
TSS42U_10
### 物料型号 - 型号:TSS42U/TSS43U - 封装:0603 Standard package, molded plastic

### 器件简介 TSS42U/43U是由TAIWAN SEMICONDUCTOR生产的表面贴装肖特基势垒二极管,适用于小信号应用,具有非常薄/无铅封装、低电容和低正向电压降的特点。这些二极管还符合RoHS标准,并且有铅自由版本。

### 引脚分配 - 引脚配置:金镀层,可焊接,符合MIL-STD-750, Method 2026,高温焊接保证260°C/10s。 - 极性:由阴极带表示。

### 参数特性 - 重复峰值反向电压:VRRM 30V - 反向电压:VR 30V - RMS反向电压:VR(RMS) 21V - 平均正向电流:IF 200mA - 重复峰值正向电流:IFRM 500mA - 非重复峰值正向浪涌电流:IFSM 4.0A(脉冲宽度=8.3ms) - 功率耗散:PD 150mW - 正向电压:VF TS42U/43U, IF = 200mA 1.00V - TS42U,IF=10mA:0.40V - TS42U, IF = 50mA:0.65V - TS43U,IF= 2mA:0.33V - TS43U,IF=15mA:0.45V - VR=25V反向漏电流:IR 0.5uA - 典型电容:CJ 10pF(VR = 1V, f = 1.0MHz) - 反向恢复时间:Trr 5ns - 热阻(结到环境):ROJA 667°C/W - 工作结温:TJ 125°C - 存储温度范围:TJ, TSTG -55to+125°C

### 功能详解 这些二极管设计用于小尺寸安装,具有极低的电容和正向电压降,适用于需要快速开关和低功耗的应用场景。

### 应用信息 适用于需要快速响应和低功耗的场合,如电源管理、信号处理等。

### 封装信息 - 封装:0603标准封装,模塑塑料。 - 尺寸:长1.60-1.80mm,宽0.80-1.00mm,高0.70-0.85mm。 - 典型尺寸:C 0.45mm,D 0.7mm。
TSS42U_10 价格&库存

很抱歉,暂时无法提供与“TSS42U_10”相匹配的价格&库存,您可以联系我们找货

免费人工找货