CHA2066

CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. A B C D E NC G1 7272 NC G2 Vd RFin RFout UMS Gain ( dB ) 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) 0 1 2 3 4 ¦ Broad band performance 10-16GHz ¦ 2.0dB noise figure, 10-16GHz ¦ 16dB gain, ± 0.5dB gain flatness ¦ Low DC power consumption, 50mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 1,52 x 1,08 x 0.1mm On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure, 10-16GHz Gain Gain flatness 14 Min Typ 2.0 16 ± 0.5 ± 1.0 Max 2.5 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20664281 - 07 Oct 04 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Noise Figure ( dB ) Main Features 20 5 CHA2066 Electrical Characteristics Tamb = +25°C, Vd = +4V Symbol Parameter 10-16GHz Low Noise Amplifier Test Condi tions Min Typ Max Unit Fop G ∆G NF VSWRin VSWRout IP3 P1dB Id Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point Output power at 1dB gain compression Drain bias current (2) 10 14 16 ± 0.5 2.0 16 Ghz dB ± 1.0 2.5 3.0:1 3.0:1 dB dB 20 10 45 dBm dBm mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the indicated parameter values should be improved. (2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ). Absolute Maximum Ratings (1) Tamb = +25°C Symbol Vd Pin Top Tstg Parameter (1) Drain bias voltage (3) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.5 +15 -40 to +85 -55 to +125 Unit V dBm °C °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3) For a typical biasing circuit : B & D grounded. See chip biasing option page 7/8. Ref. : DSCHA20664281 - 07 Oct 04 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-16GHz Low Noise Amplifier Typical Results Chip Typical Response ( On wafer Sij ) : CHA2066 Tamb = +25°C Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected ) Freq GHz 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 MS11 dB -0.25 -0.54 -0.88 -1.38 -2.32 -4.51 -8.90 -12.32 -10.70 -8.32 -7.00 -6.48 -6.63 -7.33 -8.51 -9.93 -11.00 -11.11 -10.35 -9.53 -8.97 -9.04 -9.70 -10.97 -12.61 -14.42 PS11 ° -16.1 -31.8 -48.8 -68.9 -95.1 -131.2 -177.3 122.2 61.8 24.9 -1.8 -23.4 -42.1 -58.2 -71.5 -79.7 -82.6 -83.8 -88.5 -100.1 -117.1 -137.0 -161.0 174.2 144.5 110.6 MS12 dB -82.22 -83.38 -84.02 -72.90 -62.06 -52.22 -45.23 -41.37 -39.16 -37.57 -36.41 -35.43 -34.71 -34.27 -34.16 -34.42 -35.18 -36.29 -37.52 -38.26 -37.98 -36.56 -35.28 -34.49 -34.15 -34.37 PS12 ° 90.1 37.9 17.8 21.7 8.4 -25.9 -71.4 -112.2 -144.4 -170.5 168.3 149.3 131.5 114.2 98.4 83.4 70.8 61.5 58.2 59.5 64.4 64.7 56.8 47.1 36.2 24.8 MS21 dB -46.86 -46.99 -30.57 -12.70 -1.44 7.98 13.83 16.32 17.19 17.48 17.54 17.55 17.53 17.44 17.23 16.85 16.29 15.59 14.75 13.82 12.71 11.36 9.72 7.77 5.59 3.10 PS21 ° -148.0 -169.6 -13.6 -58.0 -96.2 -145.4 154.7 100.4 56.4 20.2 -10.5 -38.0 -63.6 -88.2 -112.3 -135.9 -158.6 179.4 158.2 137.2 115.9 95.5 75.4 56.6 39.2 23.8 MS22 dB -0.07 -0.15 -0.67 -1.41 -1.47 -2.17 -3.17 -4.01 -4.90 -5.99 -7.27 -8.87 -10.85 -12.73 -13.16 -11.71 -9.84 -8.29 -7.17 -6.34 -5.86 -5.47 -5.35 -5.37 -5.41 -5.70 PS22 ° -7.1 -14.8 -24.3 -26.7 -33.3 -41.3 -46.2 -50.1 -53.3 -56.8 -59.4 -60.5 -57.5 -46.1 -27.4 -13.0 -8.5 -9.4 -13.1 -18.1 -23.7 -29.3 -34.7 -39.3 -43.4 -46.2 Ref. : DSCHA20664281 - 07 Oct 04 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2066 Typical Results Chip Typical Response ( On wafer Sij ) : 10-16GHz Low Noise Amplifier Tamb = +25°C Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected ) 20 15 10 Gain, RLoss ( dB ) 5 Gain dBS22 dBS11 0 -5 -10 -15 -20 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency ( GHz ) Typical Gain and Matching measurements on wafer. 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 10 11 12 13 Gain, NF ( dB ) GAIN NF Gab 14 15 16 17 18 19 20 Frequency ( GHz ) Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20664281 - 07 Oct 04 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-16GHz Low Noise Amplifier Typical Test-Jig Results CHA2066 Circuit Typical Response ( Test-Jig ) : Tamb = +25°C 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 5 6 7 8 Vd = 4.0V ; B & E Pads grounded ; Id = 55mA ( Vg1 & Vg2 NC ) Gain & NF & RLoss ( dB ) dBS11 dBS21 dBS22 Gab Nf_C 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) Typical Linear measurements in test-jig. 20 18 16 14 12 10 8 6 4 2 0 -2 -16 -14 -12 -10 -8 -6 -4 Pin ( dBm ) at 12GHz 20 18 16 14 12 10 8 6 4 2 0 -2 0 -16 -14 -12 -10 -8 -6 -4 Pin ( dBm ) at 16GHz Pout Gain Pout Gain -2 -2 0 Typical Output Power measurements in test-jig. Ref. : DSCHA20664281 - 07 Oct 04 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2066 10-16GHz Low Noise Amplifier Chip schematic and Pad Identification 1520µm G1 7272 NC G2 Vd 2k 1k 2k 1k 35 20 1080µm RFin RFout 10 11 23 8 15 15 6 UMS A B C D E NC Pad size 100x100µm, chip thickness 100µm Dimensions : 1520 x 1080µm ± 35µm 1025 875 115 1010 410 410 225 455 605 755 905 35 1450 Ref. : DSCHA20664281 - 07 Oct 04 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-16GHz Low Noise Amplifier Typical Chip Assembly C = 100pF Vd CHA2066 IN OUT B E Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. The two requirements are : N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 4V and B & D grounded. All the other pads non connected ( NC ). Idd = 45mA & Pout-1dB = +10dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+1.4V ; G2=+1.4V). Low Noise and high output power : Vd = 4V and B & E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = +13dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+1.4V ; G2=+4.0V). A file is available on request to help the biasing option tuning. Ref. : DSCHA20664281 - 07 Oct 04 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2066 10-16GHz Low Noise Amplifier Ordering Information Chip form : CHA2066-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20664281 - 07 Oct 04 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09