CHA2093_03

CHA2093 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. IN Vd 50 25 OUT Vg 1 Vg 2 20 Gain ( dB ) 10 Noise Figure ( dB ) 9 8 7 6 5 4 3 2 1 0 10 15 20 25 30 35 40 Frequency ( GHz ) Main Features ¦ Broad band performance 20-30GHz ¦ 2.2dB noise figure, 20-30GHz ¦ 15dB gain, ± 0.5dB gain flatness ¦ Low DC power consumption, 50mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 1.67 x 1.03 x 0.1mm 18 16 14 12 10 8 6 4 2 0 On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure, 20-30GHz Gain Gain flatness 13 Min Typ 2.2 15 ± 0.5 ± 1.0 Max 3.0 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20933279 - 06 Oct 03 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093 Electrical Characteristics Tamb = +25°C, Vd = +4V Id=45mA Symbol Fop G ∆G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point 20-30GHz Low Noise Amplifier Min 20 13 Typ Max 30 Unit Ghz dB 15 ± 0.5 2.2 ± 1.0 3.0 3.0:1 3.0:1 20 13 50 dB dB dBm dBm mA Output power at 1dB gain compression Drain bias current (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires , the indicated parameter values should be improved. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Vd Pin Top Tstg Parameter Drain bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 5.0 +10 -40 to +85 -55 to +125 Unit V dBm °C °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20933279 - 06 Oct 03 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-30GHz Low Noise Amplifier Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Bias Conditions : Vd = +4V Id=45mA CHA2093 Freq GHz 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 MS11 dB -1.36 -1.98 -2.93 -4.5 -6.8 -10.02 -13.47 -14.68 -13.76 -12.83 -13.51 -14.3 -14.74 -14.63 -14.15 -13.71 -13.42 -13.54 -14.43 -14.48 -12.87 -8.84 -5.55 -3.72 -2.5 -1.88 -1.52 -1.32 -1.07 -0.93 -0.82 -0.68 -0.52 -0.5 -0.41 -0.37 PS11 ° 140 121.9 101.1 77.7 50.1 16.4 -30 -86 -131 -159.2 177.8 170.9 167.2 168 163.4 155.8 145.5 124.4 100.2 56.9 5.6 -37.4 -73.3 -101.3 -123.2 -141.2 -155.7 -167.5 -177.6 172.6 164.7 157.2 149.5 142 135.3 128.4 MS12 dB -62.29 -58.39 -53.05 -49.08 -46.97 -44.52 -42.23 -40.43 -39.41 -38 -36.01 -34.99 -34.53 -34.46 -33.67 -33.27 -32.65 -32.6 -32.49 -31.69 -31.87 -31.22 -31.23 -32.96 -34.73 -35.69 -35.69 -37.95 -38.15 -43.41 -43.1 -43.1 -43.23 -44.08 -45.8 -45.05 PS12 ° -138.5 -130.1 -130.3 -146.8 -163.9 173.2 160.2 138.2 126.2 104.7 92.4 63.7 46.8 24.6 6.3 -7.6 -29.3 -51.5 -68.3 -88.8 -115.7 -140.4 -171 159.7 134.8 121.6 98 72.2 56.8 86.9 76.9 44.4 39.6 24 21 18.1 MS21 dB 4.35 7.36 9.77 11.61 12.9 13.86 14.55 15 15.36 15.69 15.79 15.96 15.98 15.84 15.75 15.6 15.55 15.46 15.48 15.48 15.24 14.69 13.43 11.43 9.01 6.2 3.35 0.36 -2.78 -6.02 -9.59 -13.6 -18.24 -24.6 -35.19 -37.14 PS21 ° 51.6 27.2 0.8 -26.2 -53.2 -78.7 -103.5 -127 -149.8 -171.8 165.6 144.3 122.3 102.1 80.9 60.2 40.3 18.6 -2.8 -27.3 -53 -82.2 -112.8 -141.9 -168.7 167.5 145.9 125.7 107.4 89 71.9 55.3 40.2 27.2 30.1 126.8 MS22 dB -16.6 -16.75 -16.67 -16.77 -17.47 -17.67 -18.06 -18.55 -18.7 -17.9 -15.62 -14.48 -13.4 -12.6 -11.67 -11.4 -11.3 -10.33 -9.98 -8.88 -7.99 -6.86 -6.35 -6.69 -7.51 -8.65 -9.92 -11.17 -12.15 -12.5 -12.27 -11.82 -10.89 -9.87 -8.91 -8.04 PS22 ° 151.6 145.1 137.9 129.8 122.7 122.2 118.4 118.4 125.4 131.3 131.1 127 120.5 116.3 107.1 100.6 96.1 91.6 85.7 80.2 70.5 58.1 40.1 20.4 1.5 -17 -36.6 -56.5 -78.9 -103.1 -127.3 -148.5 -166.3 -179.6 167.4 156.2 Ref. : DSCHA20933279 - 06 Oct 03 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Vd = 4V ; Id = 45mA 20 15 10 Gain, RLoss ( dB ) 5 DBS11 20-30GHz Low Noise Amplifier DBS22 Gain 0 -5 -10 -15 -20 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency ( GHz ) Typical Gain and Matching measurements on wafer. 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Gain, NF ( dB ) Gain NF Gab 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Frequency ( GHz ) Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20933279 - 06 Oct 03 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-30GHz Low Noise Amplifier Typical Results Tamb = +25°C Vd = 4V ; Id = 45mA CHA2093 F=20GHz Output power (dBm) Gass (dB) Gass (dB) 16 14 12 10 8 6 4 2 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Input power (dBm) Pout Gain 16 14 12 10 8 6 4 2 0 F=30GHz 16 Output power (dBm) 14 12 10 8 6 4 2 0 -3 -2 -1 0 1 2 3 4 5 6 7 Input power (dBm) Typical Output Power and Gain measurements in test jig (included losses of the jig) Ref. : DSCHA20933279 - 06 Oct 03 5/8 Specifications subject to change without notice 16 14 12 10 8 6 Pout Gain 4 2 0 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093 Typical Chip Assembly 20-30GHz Low Noise Amplifier To Vd DC Drain supply feed 100pF 7034 25 50 IN OUT 100pF 1 00pF To Vg1 DC Gate supply feed To Vg2 DC Gate supply feed Mechanical data Ref. : DSCHA20933279 - 06 Oct 03 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-30GHz Low Noise Amplifier Chip Biasing CHA2093 This chip is a two stage amplifier, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd 50 IN Vds1 Vg 1 The two requirements are : N°1 : Not exceed Vds = 3.5V ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 3.5V and Id = 30mA ( Vg1=Vg2) 25 OUT Vds2 Vg 2 Low Noise and high output power : Vd = 4.0V and Id = 45mA. A separate access to the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a typical current of 30mA for the output stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain 45 mA of current through the amplifier. Ref. : DSCHA20933279 - 06 Oct 03 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093 20-30GHz Low Noise Amplifier Ordering Information Chip form : CHA2093-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20933279 - 06 Oct 03 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09