CHA2157

CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Gain & Rloss (dB) 15 10 5 0 -5 -10 -15 -20 55 Gain S11 S22 Main Features ■ 3.5 dB noise figure ■ 10 dB ± 1dB gain ■ 15 dBm output power (-1dB gain comp.) ■ DC power consumption, 80mA @ 3.3V ■ Chip size: 1.71 x 1.04 x 0.10 mm 56 57 58 59 60 Frequency (GHz) Typical on Wafer Measurements Main Characteristics Tamb. = 25° C Symbol Fop G NF P1dB Id Parameter Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression Bias current Min 55 8 Typ 10 3.5 Max 60 12 4.5 Unit GHz dB dB dBm 13 15 80 150 mA ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA21577150 - 30 May 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2157 Tamb = +25° Vd = 3.3V C, Symbol Fop G ∆G Is NF P1dB VSWRin 55-60GHz Low Noise Amplifier Electrical Characteristics for Broadband Operation Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure CW output power at 1dB compression (1) Input VSWR (1) 13 20 Min 55 8 Typ Max 60 Unit GHz dB dB dB 10 ±1.0 25 3.5 15 3.0:1 3.0:1 3.3 80 12 ±2.0 4.5 dB dBm 6.0:1 6.0:1 3.8 150 V mA VSWRout Output VSWR (1) Vd Id DC Voltage Bias current (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. A wire bond of typically 0.1 to 0.15nH will improve the input and output matching. Absolute Maximum Ratings Tamb. = 25° (1) C Symbol Vd Id Vg Pin Ta Tstg Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Parameter Drain bias voltage Values 4.0 150 -2.0 to +0.4 +15 -40 to +85 -55 to +155 Unit V mA V dBm ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA21577150 - 30 May 07 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55-60GHz Low Noise Amplifier Typical On Wafer Scattering Parameters Bias Conditions: Vd=+3.3V, Vg1=Vg2 to have Id=80mA F(GHz) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 S11 dB -6,19 -6,01 -5,78 -5,57 -5,32 -5,04 -4,8 -4,5 -4,32 -4,06 -3,83 -3,65 -3,56 -3,42 -3,33 -3,32 -3,35 -3,47 -3,69 -4,05 -4,58 -5,45 -6,88 -9,34 -13,51 -21,64 -13,04 -7,18 -4,19 -2,48 -1,56 -1,13 -0,93 -1,23 -2,14 -3,09 -4,76 -6,29 -7,54 -7,99 -7,63 -6,75 -5,78 -4,75 -4,31 -4,01 S11 deg 168,5 163,4 158,3 152,8 148,7 142,7 137,4 131,6 125,4 119,8 113,1 106,5 99,7 93,1 85,6 78,1 70,4 62,2 53,6 44,7 35 24,5 13,9 3,7 -1,3 49,9 95,8 87,7 70,7 53,6 37,1 22 6 -8,5 -22 -34,3 -42,4 -45,5 -46,3 -42,1 -39 -39,3 -43,8 -51,4 -63,3 -71,9 S12 dB -53,85 -53,05 -55,51 -63,53 -49,37 -51,91 -51,32 -52,83 -50,9 -49,33 -49,97 -49,38 -47,44 -45,59 -46,24 -43,98 -42,56 -41,07 -40,29 -40,08 -40,8 -41,16 -41,12 -42,27 -41,21 -41,07 -47,32 -50,87 -42,36 -38,05 -35,54 -34,48 -32,16 -28,67 -28,47 -29,18 -29,48 -27,33 -27,27 -27,59 -27,52 -27,7 -26,84 -26,96 -26,49 -26,42 S12 deg 104,2 83,1 61,9 136,7 58,7 58,7 48,4 40,4 67 39,6 36,3 37,1 39,9 23,7 25 12,4 2 -12,4 -28,3 -46,4 -63,2 -70,6 -84,2 -89,6 -108,8 -130,8 -151,5 -74,5 -79,2 -96,4 -113,9 -122,1 -127,2 -156,4 176,8 157,7 147,1 127,2 99,4 81,8 64,5 50,7 38,4 22,3 4,2 -10,1 3/6 CHA2157 S21 dB -4,75 -5,02 -5,8 -6,59 -6,68 -7,14 -7,51 -8,77 -9,37 -9,09 -10,11 -11,13 -11,39 -10,79 -9,24 -7,26 -5,66 -5,35 -5,21 -5,56 -5,61 -4,92 -3,29 -1,05 1,77 4,18 5,47 7,16 8,35 9,2 9,96 10,55 11,32 11,99 12,18 12,1 11,94 11,65 11,31 10,87 10,44 10 9,64 9,39 9,1 8,56 S21 deg -110,1 -126 -141,7 -154,4 -164,3 -174 172,8 162,3 162,4 150,7 142,7 139,8 143,2 145,5 145,2 139,8 125,3 110,7 98,9 91,8 88,6 89,3 88 83,8 74,4 55,5 38,5 20,8 -0,2 -19,7 -39,3 -58,1 -77 -98 -121 -142,7 -163,6 176,6 156,8 137,9 119,9 102,2 84,8 67,5 46,8 30,1 S22 dB -2,94 -3,07 -3,32 -3,34 -3,7 -4,2 -4,71 -5,05 -5,33 -6,14 -6,85 -7,43 -7,66 -7,83 -7,15 -5,72 -4,07 -2,81 -2,13 -1,91 -1,95 -2,12 -2,3 -2,51 -2,7 -3,22 -3,59 -4,06 -4,88 -5,68 -6,66 -7,73 -9,16 -10,87 -11,61 -11,33 -10,87 -10,03 -9,34 -8,91 -8,6 -8,49 -8,27 -8,12 -8,13 -7,89 S22 deg 146,8 142,5 138,2 134,5 127,7 123,4 120,3 118 114 111,7 111,1 113,4 116,1 120,6 127,2 129,5 126,3 117,8 107,8 97,8 88,9 80,9 73,4 66,2 58,2 50,2 43,3 34,9 26,9 20 12,8 6,5 0,1 0,2 6,6 7,5 5,3 2,7 -6,2 -16,1 -27 -37,5 -48,9 -59,8 -69,7 -80,5 Ref. : DSCHA21577150 - 30 May 07 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2157 Typical on Wafer Measurements 55-60GHz Low Noise Amplifier Bias conditions: Tamb=+25° Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA C, 15 10 15 Gain Gain & Rloss (dB) 10 5 0 -5 -10 Gain & Rloss (dB) 5 0 -5 -10 -15 -20 0 10 20 30 40 50 60 Gain S11 S11 S22 -15 -20 55 56 57 58 59 60 S22 Frequency (GHz) Frequency (GHz) Typical packaged Measurements Bias conditions: Tamb=+25° Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA C, 15 10 0 -5 -10 -15 -20 50 52 54 56 58 60 S11 S22 Gain & NF (dB) 5 Gain 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 50 52 54 Gain Gain & Rloss (dB) NF 56 58 60 Frequency (GHz) Frequency (GHz) Ref. : DSCHA21577150 - 30 May 07 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55-60GHz Low Noise Amplifier Chip Assembly and Mechanical Data CHA2157 Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. (Chip thickness: 100µm. All dimensions are in micrometers) Ref. : DSCHA21577150 - 30 May 07 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2157 55-60GHz Low Noise Amplifier Ordering Information Chip form: CHA2157-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA21577150 - 30 May 07 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09