CHA2159

CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This simplifies the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. 22 20 18 16 14 12 Gain & RLosses (dB) 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 55 60 Frequency (GHz) 65 Main Features ■ 4.0 dB noise figure ■ 20 dB gain ■ 14 dBm output power (-1dB gain comp.) ■ DC power consumption, 115mA @ 3.5V ■ Chip size: 2.35 x 1.11 x 0.10 mm dBS11 dBS22 dBS21 NF Typ. Typical on Wafer Measurements Main Characteristics Tamb = +25° Vd = 3.5V C, Symbol Fop G NF P1dB Id Parameter Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression Bias current Min 55 18 Typ 20 4.0 Max 65 Unit GHz dB 4.8 dB dBm 13 14 115 150 mA ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA21597262 - 19 Sep 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2159 Tamb = +25° Vd = 3.5V C, Symbol Fop G ∆G Is NF P1dB VSWRin 55-65GHz Low Noise Amplifier Electrical Characteristics for Broadband Operation Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure CW output power at 1dB compression (1) Input VSWR (1) Min 55 18 Typ Max 65 Unit GHz dB dB dB 20 ±1.0 40 50 4.0 4.8 dB dBm 13 14 2.5:1 2.0:1 115 3.5 4.0:1 2.5:1 130 VSWRout Output VSWR (1) Id Vd Bias current DC Voltage mA V (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching. Absolute Maximum Ratings Tamb = +25° (1) C Symbol Vd Id Vg Pin Ta Tstg Parameter Drain bias voltage Drain bias current in linear condition Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.0 150 -2.0 to +0.4 0 -40 to +85 -55 to +125 Unit V mA V dBm ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA21597262 - 19 Sep 07 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55-65GHz Low Noise Amplifier Typical chip on wafer Sij parameters Bias Conditions: Vd = +3.5V, Vg1 = Vg23 = Vg4 adjusted for Id = 115mA Freq (GHz) dB(S11) P(S11) (°) dB(S12) P(S12) (°) dB(S21) P(S21) (°) CHA2159 dB(S22) P(S22) (°) 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 -3.6 -3.7 -3.6 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.4 -3.4 -3.4 -3.5 -3.6 -3.7 -3.9 -4.1 -4.5 -4.9 -5.7 -6.6 -7.1 -6.9 -6.2 -5.5 -5.3 -5.5 -5.5 -5.7 -5.9 -5.9 -6.2 -6.0 -5.6 -5.5 -5.8 -5.7 -5.8 -5.9 -6.0 -7.1 -7.1 -7.0 -7.5 -7.9 -8.3 -168.5 -172.8 -177.5 177.6 172.6 167.9 163.2 158.5 153.2 147.9 142.3 136.2 130.0 123.7 117.5 110.8 103.7 95.9 88.5 81.3 78.0 76.7 76.6 73.3 64.0 53.7 42.8 34.2 24.3 16.0 6.7 -0.5 -8.6 -18.2 -31.1 -40.4 -50.9 -62.2 -72.9 -84.0 -94.9 -102.8 -111.9 -122.1 -127.1 -137.0 -64.4 -67.3 -62.1 -58.6 -58.3 -54.5 -57.5 -54.9 -54.9 -53.0 -52.6 -54.4 -51.5 -50.5 -49.7 -50.1 -48.8 -49.7 -49.6 -48.9 -50.3 -49.3 -48.3 -48.5 -48.1 -48.1 -49.8 -50.8 -51.8 -49.8 -51.2 -49.9 -47.8 -47.4 -47.2 -57.2 -51.5 -48.4 -49.5 -49.0 -44.6 -49.7 -44.5 -46.1 -44.5 -48.4 166 173 150 162 146 113 129 106 100 96 88 84 76 70 60 50 42 31 28 10 3 4 -1 -18 -21 -39 -49 -59 -40 -52 -42 -72 -68 -58 -63 -91 -99 -79 -91 -105 -115 -141 -141 -168 175 167 -8.4 -7.7 -7.4 -7.1 -6.9 -6.6 -6.5 -6.3 -6.0 -5.7 -5.4 -5.2 -4.8 -4.4 -3.9 -3.2 -2.2 -0.7 1.3 3.6 6.2 8.6 10.7 12.2 13.3 14.1 14.9 15.8 16.6 17.3 18.0 18.4 18.9 19.4 19.7 19.8 19.8 19.9 19.7 19.7 19.6 19.7 19.5 19.7 20.1 21.0 -116 -142 -168 167 144 122 101 82 62 44 25 7 -10 -25 -40 -54 -66 -78 -93 -109 -131 -155 176 146 116 88 61 33 4 -23 -53 -82 -111 -141 -172 157 127 96 65 35 5 -27 -59 -91 -124 -161 -4.7 -4.5 -4.3 -4.1 -3.8 -3.5 -3.3 -3.1 -2.9 -2.7 -2.7 -2.6 -2.5 -2.4 -2.3 -2.2 -2.2 -2.3 -2.2 -2.3 -2.5 -2.6 -3.0 -3.3 -3.7 -4.1 -4.8 -5.8 -6.6 -7.5 -8.2 -9.0 -9.4 -9.4 -9.6 -9.4 -9.1 -8.8 -9.1 -9.7 -10.1 -10.1 -10.3 -10.9 -12.5 -13.4 -177 -180 177 174 170 166 161 156 151 146 140 135 129 124 117 111 104 98 90 83 74 66 58 49 41 32 24 17 11 6 1 -1 -4 -6 -9 -14 -20 -26 -38 -43 -52 -57 -64 -72 -75 -69 Ref. : DSCHA21597262 - 19 Sep 07 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2159 Typical on Wafer Measurements 55-65GHz Low Noise Amplifier Bias conditions: Tamb = +25° Vd = 3.5V, Vg1 = Vg2 3 = Vg4 adjusted for Id = 115mA C, Typical Gain, Return Losses and Noise figure 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 40 Gain, Rlosses & NF (dB) dBS11 dBS21 dBS22 NF Typ. 45 50 55 Frequency (GHz) 60 65 20 19 18 T yp ic a l O u tp u t P o w e r -1 d B Output Power P-1dB (dBm) 17 16 15 14 13 12 11 10 9 8 55 56 57 58 59 60 61 62 63 64 65 F re q u e n c y (G H z ) Ref. : DSCHA21597262 - 19 Sep 07 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55-65GHz Low Noise Amplifier Chip Assembly and Mechanical Data CHA2159 Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended. Bonding pad positions DC Pads size: 100/100 µm, chip thickness: 100µm. Ref. : DSCHA21597262 - 19 Sep 07 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2159 55-65GHz Low Noise Amplifier Ordering Information Chip form : CHA2159-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA21597262 - 19 Sep 07 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09