CHA2194

CHA2194 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 22 24 26 28 30 32 34 36 38 40 42 25,00 Main Feature § § § § § Broad band performance 36-44GHz 3dB noise figure 19dB gain, ± 0.5dB gain flatness Low DC power consumption, 45mA 20dBm 3rd order intercept point Chip size : 1.670 x 0.970x 0.1mm Gain & NF ( dB ) 15,00 5,00 -5,00 § -15,00 dBS21 NF dBS11 dBS22 -25,00 44 46 48 50 52 54 56 58 60 Frequency ( GHz ) Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure at freq : 40GHz Gain Gain flatness On wafer typical measurement Min Typ 3 Max 4 Unit dB dB 17 19 ± 0.5 ±1 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA21942035 -04-Feb.-02 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 RLosses(dB) CHA2194 Electrical Characteristics Tamb = +25°C, Vd = +3,5V (On wafer) Symbol Fop G ∆G NF VSWRin VSWRout IP3 P1dB Id Parameter Operating frequency range Gain (1) Gain flatness (1) Noise figure (1) (freq: 36-40 GHz) Input VSWR (1) Ouput VSWR (1) 3rd order intercept point 36-44GHz Low Noise Amplifier Min 36 17 Typ Max 44 Unit Ghz dB 19 ± 0.5 3 2.5:1 2:5:1 20 ±1 4 3.0:1 3.0:1 dB dB dBm dBm 75 mA Output power at 1dB gain compression Drain bias current (2) 8 10 45 (1) These values are representative of wafer measurements without bonding wire at the RF ports. (2) This current is the typical value for low noise and low current consumption biasing : Vd=3.5V , Vg12 and Vg3 not connected. Absolute Maximum Ratings (3) Tamb = +25°C Symbol Vd Vg Id Pin Top Tstg Parameter Drain bias voltage (5) Vg12 and Vg3 max Drain current Maximum peak input power overdrive (4) Operating temperature range Storage temperature range Values 4 +1 75 15 -40 to +85 -55 to +125 Unit V V mA dBm °C °C (3) Operation of this device above anyone of these paramaters may cause permanent damage. (4) Duration < 1s. (5) See chip biasing options page 9 Ref : DSCHA21942035 -04-Feb.-02 2/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-44GHz Low Noise Amplifier Typical Result Chip Typical Response ( On wafer Scattering parameters ) : Tamb = +25°C Vd=3.5V Id=+42mA F(GHz) S11 S12 S21 CHA2194 S22 2,00 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 20,00 22,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 3 6 ,0 0 3 7 ,0 0 3 8 ,0 0 3 9 ,0 0 4 0 ,0 0 4 1 ,0 0 4 2 ,0 0 4 3 ,0 0 4 4 ,0 0 45,00 46,00 47,00 48,00 49,00 50,00 mod dB -4,39 -3,92 -3,01 -2,33 -1,87 -1,57 -1,35 -1,25 -1,16 -1,09 -1,01 -0,99 -1,00 -1,05 -1,15 -1,42 -2,17 -4,74 -11,78 -17,20 -16,20 -17,00 -19,78 -20,49 -17,37 -14,90 -14,38 -14,17 -14,23 -14,45 -13,44 -11,65 -9,14 -6,61 -4,21 -3,45 -2,71 -2,35 Pha deg -56,73 -86,19 -111,00 -132,18 -149,64 -164,59 -177,94 169,65 157,50 144,51 130,06 113,68 104,41 93,20 80,32 63,49 40,77 10,16 -12,14 17,23 20,67 -2,28 -48,40 -119,64 -175,00 1 4 8 ,1 9 1 1 9 ,4 0 9 9 ,7 8 8 1 ,4 1 6 8 ,0 4 5 4 ,3 1 3 7 ,4 4 15,96 -8,98 -34,87 -62,16 -84,52 -102,45 mod dB -75,42 -68,73 -68,42 -62,78 -58,07 -54,16 -51,89 -52,93 -51,04 -49,77 -48,14 -47,48 -48,97 -48,69 -48,51 -49,95 -47,16 -44,24 -41,60 -41,18 -41,81 -39,78 -39,87 -39,25 -37,96 -36,53 -35,30 -33,63 -33,70 -32,62 -32,01 -31,08 -30,72 -31,56 -33,12 -35,95 -37,02 -38,27 Pha deg 44,36 -0,07 -40,89 -61,43 -92,78 -118,46 -167,25 158,44 165,85 164,40 114,15 73,88 61,97 52,80 18,34 6,77 -37,23 -94,27 -147,89 175,51 148,47 125,02 112,63 9 8 ,4 5 8 6 ,4 5 7 6 ,6 1 5 7 ,4 6 3 8 ,2 6 2 0 ,3 7 5 ,4 9 -15,03 -35,85 -59,51 -86,95 -117,26 -136,86 -153,94 165,40 mod dB -37,71 -38,99 -38,00 -31,40 -22,10 -15,19 -11,48 -10,44 -11,48 -15,47 -22,72 -18,51 -10,74 -4,00 1,96 7,45 12,59 16,78 18,62 18,62 18,49 18,57 18,87 1 9 ,3 0 1 9 ,6 0 1 9 ,7 0 1 9 ,6 0 1 9 ,5 1 1 9 ,1 2 1 9 ,0 6 1 9 ,1 0 1 9 ,0 6 18,88 18,39 17,52 15,52 13,00 10,38 Pha deg 179,84 144,86 82,75 -24,55 -68,40 -121,90 -177,68 129,48 84,35 49,64 64,72 144,50 152,58 142,49 125,50 100,83 70,07 28,35 -19,04 -57,49 -87,41 -113,67 -138,52 -164,01 1 7 0 ,4 4 1 4 3 ,8 2 1 1 8 ,7 1 9 4 ,3 1 7 0 ,5 6 4 6 ,8 4 2 2 ,8 0 -3,12 -30,61 -60,43 -91,46 -122,46 -148,98 -171,73 mod dB -0,11 -0,41 -0,87 -1,53 -2,33 -3,50 -4,77 -6,27 -8,13 -12,66 -16,87 -25,93 -35,08 -27,71 -25,75 -22,24 -25,05 -21,79 -15,03 -13,03 -12,36 -11,84 -11,68 -11,17 -10,94 -10,68 -10,97 -10,84 -10,39 -10,36 -9,76 -9,13 -9,22 -9,63 -10,19 -11,03 -10,81 -9,71 Pha deg -26,01 -51,53 -75,92 -98,47 -120,41 -140,34 -158,48 -176,02 163,01 138,91 134,36 129,23 177,75 -121,39 -116,09 -115,84 -110,45 -68,00 -77,79 -96,11 -107,46 -116,00 -122,31 -127,64 -133,38 -140,12 -145,87 -148,12 -154,43 -159,30 -166,74 1 7 8 ,4 1 158,00 130,78 94,17 49,86 7,88 -23,44 Ref : DSCHA21942035 -04-Feb.-02 3/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2194 Typical Results 36-44GHz Low Noise Amplifier Chip Typical Response ( On wafer Scattering parameters) : Tamb = +25°C Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 25,00 15,00 Gain & NF ( dB ) -5,00 -15,00 dB 21 S N F dB 11 S dB 22 S -25,00 Frequency( G z ) H 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 Typical Gain , Matching and Noise Figure ( Measurements on wafer.) Ref : DSCHA21942035 -04-Feb.-02 4/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 RLosses(dB) 5,00 36-44GHz Low Noise Amplifier Typical Results Chip Typical Response (In test JIG) Vd = 3.5V Vg12& Vg3 not connected; Id = 42mA Typical gain slope versus temperature : -0.025dB/°C Typical noise figure slope versus temperature : 0.011dB/°C CHA2194 25 23 21 19 17 15 13 Ga(dB) 11 9 7 5 3 1 -1 -3 -5 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 Gain Vd:3,5V 42mA T:+25°C Gain Vd=3,5V 47mA T:+85°C Gain Vd:3,5V 57mA T:-40°C NF Vd=3,5V +25°C NF Vd=3,5V +85°C NF Vd=3,5V -40°C 14 12 10 8 6 4 2 0 frequency (GHz) NF(dB) Gain (dB) Typical Gain and NF versus temperature (measurements in test jig ) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 Input power (dBm) 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 -5 -4 Output Power (dBm) Pout (dBm) 40GHz +25°C Pout (dBm) 40GHz +85°C Pout (dBm) 40GHz -40°C GAIN (dB) 40GHz +25°C GAIN (dB) 40GHz +85°C GAIN (dB) 40GHz -40°C -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 Typical Gain & Pout versus temperature (measurements in test-jig) Ref : DSCHA21942035 -04-Feb.-02 5/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2194 Circuit Typical Response ( In test-Jig ) : 36-44GHz Low Noise Amplifier CHA2194 Vd=4V Vg1=Vg2=Vg3=+1V 20 19 18 17 16 15 14 13 Output power (dBm) 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 Input power (dBm) Gain (dB) 36GHz Gain (dB) 40GHz Gain (dB) 44 GHz 9 10 Pout (dBm) 36GHz Pout (dBm) 40GHz Pout (dBm) 44 GHz 11 12 13 14 15 16 17 18 19 20 Typical Output Power (Measurement in test Jig) Tamb = +25°C Vd=4V and Vg12=Vg3=1V These values are representative of the package assembly with input and output bonding. 15 14 13 12 11 10 P-1dB (dBm) 9 8 7 6 5 4 3 2 1 0 33 34 35 36 37 38 39 40 41 42 43 44 Frequency (GHz) Pout (dBm) (Vd:3.5V) Pout (dBm) Vd:4V/ Vg*:1V) Id (mA) (Vd:3.5V) Id( mA) (Vd:4V /Vg*:1V) 100 96 92 88 84 80 76 72 68 64 60 56 52 48 44 40 Id (mA) Typical Output power –1dB. (Measurement in test Jig) Ref : DSCHA21942035 -04-Feb.-02 6/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-44GHz Low Noise Amplifier CHA2194 Chip schematic and Pad Identification (see also page 9) Pad Size :80/80µm, chip thickness 100um Dimensions : 1670µm x 970µm ± 35µm 7/10 Ref : DSCHA21942035 -04-Feb.-02 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2194 Typical Chip Assembly 36-44GHz Low Noise Amplifier - * Nominal Input and Output bonding length :0.3 to 0.38nH for one 25µm bond wire. - Chip backside is DC and RF bonding grounded Ref : DSCHA21942035 -04-Feb.-02 8/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-44GHz Low Noise Amplifier Chip Biasing options CHA2194 Internal DC schematic This chip is self-biased, and flexibility is provided by the access to positive Vg. The internal DC electrical schematic is given in order to use these pads in a safe way. Absolute recommandations: N°1 : Do not exceed Vds* = 3,5 Volt ( internal Drain to Source voltage ). N°2 : Do not bias in such a way that Vgs* becomes positive. (:internal Gate to Source voltage ) Typical biasing table and Typical results in test Jig at 40 GHz 40GHz IN TEST Jig Standard Low Noise High linearity Low noise /low current consumption Switch off Vds ( V) Vg12 (V) Vg3 (V) 3.5 4 3,5 3.5 NC 1 -1 -8 NC 1 -1 -5 Id (mA) 42 60 30 0 Typical NF(dB) Typical Gain (dB) Typical P-1dB (dB) Typical Psat (dB) 2.9 2,95 3 X 19 20 17,5 X 10 11 8 X 12 14 11 X Ref : DSCHA21942035 -04-Feb.-02 9/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2194 36-44GHz Low Noise Amplifier Ordering Information Chip form : CHA2194-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA21942035 -04-Feb.-02 10/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09