CHA2266

CHA2266 RoHS COMPLIANT 12.5-17GHz Low-Noise Driver Amplifier GaAs Monolithic Microwave IC Description VD 1 The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs PHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography. VD 2 IN OUT Main Features • • • • • • Broad band performance 12.5–17GHz 2.5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0.1mm Typical on wafer measurements ( Vds = 4V, Ids = 130mA ) 40 35 30 25 Gain & Return loss / dB 20 15 10 5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency / GHz 18 19 20 21 22 23 24 25 4,1 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2 MS11 MS21 MS22 NF Main Characteristics Tamb=+25° C Symbol Fop G NF P1dB Parameter Operating frequency range Small signal gain Noise Figure Output power at 1 dB gain compression Min 12.5 31 Typ 34 2.5 14.5 Max 17 3 Unit GHz dB dB dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22667082- 23 Mar 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2266 Electrical Characteristics on wafer Tamb = +25° Vd = 4V C, Symbol Fop G ∆G NF RLin RLout P1dB P3dB Id small signal Rth 12.5-17GHz Driver Amplifier Parameter Operating frequency range Small signal gain Small signal gain flatness Noise Figure Input return loss Output return loss Output power at 1 dB gain compression Saturated output power Drain bias current Thermal resistance @ Tback side=25° C Min 12.5 31 Typ Max 17 Unit GHz dB dB 34 ± 0.5 2.5 -10 -10 3.0 -6 -6 dB dB dB dBm 13.5 15 14.5 16 130 80° C 170 mA ° C/W Absolute maximum Ratings (1) Symbol Vd Pin Tj max Top Tstg Drain bias voltage Maximum continuous input power overdrive Maximum peak input power overdrive(2) Maximum junction temperature Operating temperature range Storage temperature Parameter Values 4.3 -15 +15 175 -40 to +85 -55 to +125 Unit V dBm dBm ° C ° C ° C (1) Operation of this device above any of these parameters may cause permanent damage. (2) Duration