0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
CHA2291

CHA2291

  • 厂商:

    UMS

  • 封装:

  • 描述:

    CHA2291 - 10-18GHz Low Noise, Variable Gain Amplifier - United Monolithic Semiconductors

  • 数据手册
  • 价格&库存
CHA2291 数据手册
CHA2291 RoHS COMPLIANT 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.10 mm 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Gain (dB) NF (dB) 11 12 13 14 Frequency (GHz) 15 16 17 18 Typical on wafer measurements : Gain & NF Main Characteristics Tamb. = 25° C Symbol Fop G NF Gctrl Id Small signal gain Noise figure Gain control range with Vc variation Bias current Parameter Operating frequency range Min 10 20 Typ 23 2.2 25 180 Max 18 Unit GHz dB 3 dB dB mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. DSCHA22917165 - 14 Jun 07 1/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Electrical Characteristics for Broadband Operation Tamb = +25° V5=Vd2,3,4= 5V C, Symbol Fop G ∆G Is NF Gctrl P1dB VSWRin CHA2291 Parameter Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure with Vc=1.2V (1) Gain control range versus Vc Output power at 1dB compression with Vc=1.2V Input VSWR (1) Min 10 20 Typ Max 18 Unit GHz dB dB dB 23 ±1 60 2.2 3 dB dB dBm 20 25 10 3.0:1 2.5:1 VSWRout Output VSWR (1) Vd DC voltage V5= Vd2,3,4 Vc 5 [-0.7, +1.2] 25 180 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bias current total (3) with Vc=1.2V (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage. (3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA. Absolute Maximum Ratings Tamb. = 25° (1) C Symbol Vd Id Vg Vc Vdg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage Maximum drain bias current Gate bias voltage Maximum Control bias voltage Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +5.2 250 -2.5 to +0.4 +1.5 +5.0 +15 +175 -40 to +85 -55 to +125 Unit V mA V V V dBm ° C ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22917165 - 14 Jun 07 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Typical on wafer Measurements CHA2291 Bias Conditions: V5=Vd2,3,4=5V, Vg1 for Id1=25mA, Vg2=Vg3,4=-0.5V, Vc=+1.2V Gain & Noise Figure versus frequency In jig Measurements All these measurements include the jig losses (about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power) Bias Conditions: V5=Vd2,3,4=5V, Vg1 for Id1=25mA, Vg2=Vg3,4=-0.5V, Vc=+1.2V Gain, Return Loss & Noise Figure versus frequency Ref. : DSCHA22917165 - 14 Jun 07 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA CHA2291 Gain versus Vc Gain versus Frequency and Vc Ref. : DSCHA22917165 - 14 Jun 07 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA CHA2291 Gain versus Output power Noise figure versus Frequency and Vc Ref. : DSCHA22917165 - 14 Jun 07 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA CHA2291 Id versus Vc (Id tuned to 180mA with Vc=+1.2V; Vd=5V) Ref. : DSCHA22917165 - 14 Jun 07 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Chip Assembly and Mechanical Data To V5 DC drain supply feed 120pF CHA2291 To Vd2,3,4 DC drain supply feed 120pF RF IN RF OUT 120pF 120pF 120pF To Vg1 DC gate supply feed To Vc DC supply feed Note: To Vg2,3,4 DC gate supply feed Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad: 100 x 100 µm Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22917165 - 14 Jun 07 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2291 Ordering Information Chip form : CHA2291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA22917165 - 14 Jun 07 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2291 价格&库存

很抱歉,暂时无法提供与“CHA2291”相匹配的价格&库存,您可以联系我们找货

免费人工找货