CHA2292

CHA2292 RoHS COMPLIANT 16-24GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Typical on wafer measurements :Gain & NF Main Features Frequency range: 17-24GHz 2.8dB Noise Figure. 25dB gain Gain control range: 15dB DC power consumption: 160mA @ 5V Chip size: 2.32 X 1.23 X 0.10 mm Gain (dB) NF (dB) 16 17 18 19 20 21 22 23 24 Main Characteristics Tamb. = 25° Parameter Min Frequency (GHz) Typ Max Unit Fop G NF Gctrl Id Operating frequency range Small signal gain Noise figure Gain control range with Vc variation Bias current 16 24 26 2.8 15 20 160 24 GHz dB 3.5 dB dB mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22927150 - 20 May 07 1/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz LNA VGA Electrical Characteristics for Broadband Operation Tamb = +25° V5=Vd2,3,4=5V C, Symbol Fop G ∆G Is NF Gctrl P1dB VSWRin CHA2292 Parameter Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure with Vc=1.2V Gain control range versus Vc Output power at 1dB compression with Vc=1.2V Input VSWR (1) Min 16 24 Typ Max 24 Unit GHz dB dB dB 26 ±1 50 2.8 3.5 dB dB dBm 15 20 11 2.5:1 2.0:1 3.5:1 3:1 VSWRout Output VSWR (1) Vd DC voltage V5= Vd2,3,4 Vc -1.5 5 [-0.7, +1.2] 35 160 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bias current total (3) with Vc=1.2V (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage. (3) With Id1=35mA, adjust Vg2,3,4 voltage for a total drain current around 160mA. Absolute Maximum Ratings Tamb. = 25° (1) C Symbol Vd Vc Id Vg Pin Ta Tstg Drain bias voltage Control bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Parameter Values 5.5 1.5 250 -2.0 to +0.4 +15 -40 to +85 -55 to +155 Unit V V mA V dBm ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22927150 - 20 May 07 2/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz LNA VGA Typical on wafer Measurements Bias Conditions: CHA2292 V5=Vd2,3,4=5V, Vg1 for Id1=35mA, Vg=-0.3V, Vc=+1.2V Gain & Noise Figure versus frequency Typical on-wafer Gain & Return Loss Ref. : DSCHA22927150 - 20 May 07 3/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz LNA VGA In jig Measurements Bias Conditions: V5=Vd2,3,4=5V, Vg1=Vg=-0.3V, Vc=+1.2V CHA2292 All these measurements include the jig losses (about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power). 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 Gain (dB) Pout (dBm) 18GHz 20GHz -30 -25 -20 Input power (dBm) -15 -10 Gain & Output power @ 18-20 GHz 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 Gain (dB) Pout (dBm) 22GHz 24GHz -30 -25 -20 Input power (dBm) -15 -10 Gain & Output power @ 22–24 GHz Ref. : DSCHA22927150 - 20 May 07 4/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz LNA VGA CHA2292 30 26 G a i n 10 9 8 7 22 18 Noise Figure (dB) 5 4 NF 10 6 2 Vc=+1.2V Vc=+0.8V Vc= 0V Vc=-0.4V 3 2 1 0 17 18 19 20 21 22 23 24 -2 -6 -10 Frequency ( GHz) Gain & Noise Figure versus Vc Ref. : DSCHA22927150 - 20 May 07 5/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Gain (dB) 6 14 17-24GHz LNA VGA Chip Assembly and Mechanical Data CHA2292 234 234 Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22927150 - 20 May 07 6/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2292 Ordering Information Chip form : CHA2292-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22927150 - 20 May 07 7/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09