CHA2394

CHA2394 RoHS COMPLIANT 36-40GHz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN OUT Vds Vds Vgs1&2 Vgs3 Main Features ■ Broadband performances : 36-40GHz 22 20 Gain (dB) 18 16 14 12 10 Typical on wafer measurements : 4 3,5 NF (dB) 3 2,5 2 1,5 1 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) ■ 2.5dB Noise Figure ■ 21dB gain ■ ±1.5dB gain flatness ■ Low DC power consumption, 60mA @ 3.5V ■ Chip size : 1.72 X 1.08 X 0.10 mm Main Characteristics Tamb. = 25° C Symbol Fop G P1dB NF Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Noise figure Min 36 18 8 21 12 2.5 3.0 Typ Max 40 Unit GHz dB dBm dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA23946354 - 20 Dec 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2394 Electrical Characteristics Tamb = +25° Vd1,2,3 = 3.5V C, Symbol Fop G ∆G ∆Gsb Is P1dB VSWRin 36-40GHz Very Low Noise Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Gain flatness over 40MHz ( within -30 ; +75° ) C Reverse isolation (1) Output power at 1dB gain compression Input VSWR (1) Min 36 18 Typ Max 40 Unit GHz dB dB dBpp 21 ±1.5 0.5 25 5 30 8 2.5:1 2.5:1 2.5 3.0:1 3.0:1 3.0 4 +0.4 dB dBm VSWRout Output VSWR (1) NF Vd Noise figure (2) DC Voltage Vd Vg dB V V mA -2 3.5 -0.25 60 Id Bias current (2) (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2 voltage. Absolute Maximum Ratings (1) Tamb. = 25° C Symbol Vd Id Vdg Vg Pin Pin Ta Tstg Drain bias current Maximum drain to gate voltage (Vd - Vg) Gate bias voltage Maximum peak input power overdrive (2) Maximum continuous input power Operating temperature range Storage temperature range Parameter Drain bias voltage Values 5.0 150 +5.0 -2.0 to +0.4 +15 -5 -40 to +85 -55 to +125 Unit V mA V V dBm dBm ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA23946354 - 20 Dec 06 2/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 36-40GHz Very Low Noise Amplifier Bias Conditions : Vd = 3.5 Volt, Id = 60 mA. CHA2394 Typical Scattering Parameters ( On wafer Sij measurements ) Freq. GHz 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 36,00 37,00 38,00 39,00 40,00 41,00 42,00 43,00 44,00 45,00 46,00 47,00 48,00 49,00 50,00 S11 dB -2,75 -2,67 -2,61 -2,64 -2,70 -2,86 -3,14 -3,69 -4,64 -6,67 -12,47 -24,80 -17,12 -23,20 -19,03 -12,46 -9,33 -8,60 -8,42 -8,47 -9,42 -10,23 -10,72 -10,45 -9,61 -8,75 -7,93 -6,42 -4,94 -3,67 -2,71 S11 /° 120,50 112,34 103,14 93,91 84,09 73,06 60,56 45,51 26,86 1,63 -33,41 45,44 23,80 -42,55 -169,48 150,31 121,49 98,97 82,30 68,26 54,37 46,67 39,92 31,54 16,79 -4,98 -30,22 -61,17 -93,19 -122,84 -147,44 S12 dB -48,15 -47,38 -46,75 -47,13 -47,59 -47,20 -48,55 -51,10 -53,09 -49,95 -46,00 -42,45 -41,43 -40,56 -39,68 -38,71 -37,54 -36,14 -34,82 -33,60 -32,98 -32,48 -32,21 -31,68 -31,02 -30,90 -30,45 -30,47 -31,52 -32,48 -33,68 S12 /° 148,90 124,38 104,04 86,03 78,03 57,56 43,27 30,27 53,09 40,63 19,49 -42,78 -103,62 -152,24 170,39 143,10 123,52 104,39 83,69 64,74 45,70 26,65 11,28 -6,54 -24,45 -42,39 -61,72 -83,47 -107,28 -128,35 -147,17 S21 dB -29,86 -30,25 -27,37 -24,34 -19,83 -14,48 -8,77 -2,99 3,00 9,18 15,20 18,91 19,89 20,36 20,77 20,98 21,06 20,87 20,58 20,27 19,84 19,24 18,67 18,19 17,83 17,42 17,00 16,37 15,28 13,83 12,15 S21 /° 60,85 88,05 109,54 126,91 140,52 146,82 144,71 136,53 121,47 98,55 62,25 12,46 -32,13 -67,68 -100,08 -130,13 -159,84 172,52 146,27 121,22 95,76 72,14 50,20 28,89 6,99 -15,61 -38,88 -63,88 -89,82 -114,96 -137,91 S22 dB -8,63 -8,34 -8,61 -8,92 -9,57 -10,03 -10,82 -12,09 -13,97 -17,34 -22,38 -16,56 -14,80 -16,05 -18,09 -21,69 -27,59 -22,46 -17,76 -14,75 -12,44 -11,06 -10,53 -10,41 -10,02 -9,83 -9,17 -8,39 -7,55 -6,98 -6,69 S22 /° -167,63 -172,68 -179,98 172,06 163,86 156,11 146,54 136,06 127,00 120,22 145,19 167,67 144,56 123,76 107,73 77,58 9,57 -82,68 -110,30 -129,22 -146,78 -164,32 -179,35 170,06 160,92 151,98 144,58 134,96 121,85 108,11 91,01 Ref. : DSCHA23946354 - 20 Dec 06 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA2394 36-40GHz Very Low Noise Amplifier Typical Output Power ( P-1dB gain compression ) Measurements. ( CW on wafer ) Conditions : Vd = 3.5 Volt, Frequency = 38 GHz. 22 20 18 16 14 12 10 8 6 4 20 30 40 50 Gain & P-1dB ( dB, dBm ) Gain P-1dB 60 70 80 90 100 Current Id ( mA ) Conditions : Id = 60 mA, Frequency = 38 GHz. 22 20 18 16 14 12 10 8 6 4 2,5 3 Gain & P-1dB ( dB, dBm ) Gain P-1dB 3,5 Bias voltage Vd ( Volt ) 4 4,5 Ref. : DSCHA23946354 - 20 Dec 06 4/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 36-40GHz Very Low Noise Amplifier Typical S parameters Measurements ( on wafer ). Bias Conditions : Vd = 3.5 Volt, Id = 60 mA. CHA2394 25 20 15 10 5 0 -5 -10 -15 -20 25 30 Gain, Rloss (dB) dBS11 dBS21 dBS22 35 40 45 50 Frequency (GHz) Typical Gain &NF Measurements ( on wafer ). Bias Conditions : Vd = 3.5 Volt, Id = 60 mA. 22 20 Gain (dB) 18 16 14 12 10 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) 4 3,5 NF (dB) 3 2,5 2 1,5 1 Ref. : DSCHA23946354 - 20 Dec 06 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA2394 36-40GHz Very Low Noise Amplifier Typical Bias Tuning for Low Noise Operation The circuit schematic is given below : Vd 100 IN 100 50 OUT Vg 1,2 Vg 3 For low noise operation, a separate access to the gate voltages of the two first stages ( Vgs1&2 ), and of the output stage ( Vgs3 ) is provided. Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and 15 mA for each of the two first stages ( 50 mA for the amplifier ). The first step to bias the amplifier is to tune the Vgs1&2 = -1V, and Vgs3 to drive 20 mA for the full amplifier. Then Vgs1&2 is reduced to obtain 50 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1&2 bias voltage, but keeping the previous value for Vgs3. Ref. : DSCHA23946354 - 20 Dec 06 6/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 36-40GHz Very Low Noise Amplifier Chip Assembly and Mechanical Data CHA2394 To Vdd DC Drain supply feed 100pF IN OUT 100pF To Vgs 1&2 DC Gate supply feed 100pF To Vgs 3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 1720+/-60 60 1125 505 1080 +/- 60 415 415 710 Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA23946354 - 20 Dec 06 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 340 CHA2394 36-40GHz Very Low Noise Amplifier Ordering Information Chip form: CHA2394-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA23946354 - 20 Dec 06 8/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09