CHA3093C

CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. A B.I.T. ( Build In Test ) monitors a DC voltage that is representative of the microwave output power. The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2,3,4 IN OUT Vg1 Vg2 Vg 3 Vg4 Vdet Typical on wafer measurements : 30 20 10 Gain & RLoss (dB) Main Features ■ Broadband performances : 20-40GHz ■ 20dBm output power. ■ 22dB gain ■ Very good broadband input matching ■ On chip output power level DC detector ■ Low DC power consumption, 330mA @ 3.5V ■ Chip size : 0.83 X 1.72 X 0.10 mm 0 S22 -10 S11 -20 -30 - 40 15 20 25 30 35 40 45 FREQ (GHz) 50 Input Rloss : solid line & output Rloss : dash line. Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit Fop G P03 Id Operating frequency range Small signal gain Output power at 3dB gain compression Bias current 20 18 20 20 22 330 40 GHz dB dBm 400 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA30932158 -07-June-02 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd1,2,3,4 = 3.5V Id=330mA Symbol Fop G G ∆G Is P1dB P3dB CHA3093c Parameter Operating frequency range (1) Small signal gain [ 20GHz to 35GHz](1) Small signal gain (1) Small signal gain flatness (1) (Any 1GHz BW) Reverse isolation (1) Pulsed output power at 1dB gain compression (1) Pulsed output power at 3dB gain compression (1) rd Min 20 20 18 Typ Max 40 Unit GHz dB dB 22 ±0.5 50 18 20 20 22 dB dB dBm dBm IP3 PAE VSWRin VSWRout NF Vdet 3 order intercept point Power added efficiency at saturation Input VSWR (1) Output VSWR (1) Noise figure Detected voltage : at 25GHz @ Pout=20dBm (2) Detected voltage : at 38GHz @ Pout=20dBm (2) Bias current (small signal) 29 10 1.2:1 2.0:1 8.0 0.65 0.45 330 400 2.0:1 3.0:1 10.0 dBm % dB V V mA Id (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less. (2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad. Absolute Maximum Ratings (1) Symbol Vds Ids Vgs Vdg Pin Parameter Drain bias voltage_small signal (2) Drain bias current_small signal Gate bias voltage Drain Gate voltage (Vds – Vgs) Maximum continuous input power (2) Maximum peak input power overdrive (3) Values 4.0 470 -2 to +0.4 +5 +4 (@ 20GHz) -1 (@ 40GHz) +15 -40 to +85 -55 to +125 Unit V mA V V dBm dBm °C °C Ta Tstg Operating temperature range Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA30932158 -07-June-02 2/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1=Vg2,3,4 for Id total = 330 mA. Freq GHz 2,00 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 36,00 37,00 38,00 39,00 40,00 41,00 42,00 43,00 44,00 45,00 46,00 48,00 50,00 52,00 54,00 56,00 58,00 60,00 mod dB -9,77 -9,97 -10,97 -12,23 -13,30 -14,19 -15,25 -16,90 -18,45 -18,27 -20,55 -20,72 -29,56 -23,58 -21,33 -21,32 -22,06 -22,21 -19,66 -17,80 -17,46 -15,16 -15,09 -14,57 -13,80 -13,55 -12,80 -12,55 -12,64 -12,53 -11,23 -10,73 -10,79 -10,93 -10,92 -11,37 -8,41 -5,96 -3,89 -2,88 -2,21 -2,02 -1,87 S11 pha /° 166,10 159,94 144,60 141,58 132,93 127,48 119,12 109,51 101,39 99,66 75,06 49,52 58,15 58,28 29,56 -8,76 -29,59 -31,27 -44,67 -56,40 -61,68 -70,64 -83,96 -89,19 -92,45 -97,98 -102,27 -108,34 -110,41 -108,87 -110,01 -118,61 -124,01 -121,39 -125,62 -121,74 -103,89 -119,91 -131,50 -146,98 -160,52 -173,49 175,37 mod dB -79,63 -78,88 -63,16 -67,81 -76,00 -69,79 -68,09 -56,64 -77,66 -54,79 -69,47 -57,54 -54,03 -56,11 -54,05 -62,57 -63,41 -56,43 -59,88 -58,46 -56,48 -52,06 -56,43 -59,91 -54,72 -54,97 -54,75 -54,06 -53,05 -50,99 -52,73 -56,04 -56,86 -52,92 -52,23 -60,67 -53,21 -58,10 -52,69 -60,21 -52,63 -55,84 -49,76 S12 pha /° 85,41 19,46 -150,36 -92,96 168,10 162,87 -141,61 151,79 -40,17 30,38 -61,55 -51,49 -168,51 107,75 67,67 -37,46 -139,56 165,63 138,12 132,33 154,53 105,41 63,48 89,24 94,43 59,43 93,32 58,24 50,25 30,11 3,78 22,66 -6,86 -31,58 -85,31 -166,71 -121,20 116,39 160,04 15,97 159,63 -175,77 95,59 mod dB -44,50 -45,28 -32,41 -30,97 -39,55 -12,99 4,59 14,64 20,56 23,06 23,87 24,20 23,40 22,98 22,93 23,05 22,56 21,93 22,19 21,80 21,36 21,50 20,88 20,82 20,70 20,47 20,11 19,72 19,84 19,49 19,40 18,88 18,38 18,36 18,33 17,03 13,67 6,60 -0,07 -7,50 -16,29 -29,86 -23,82 S21 pha /° 11,25 64,07 -15,70 -73,10 -81,72 -8,19 -92,82 166,69 66,78 -25,87 -67,24 -106,39 -146,58 -173,95 156,61 125,30 96,27 70,69 43,16 16,81 -6,65 -31,90 -56,82 -81,12 -104,79 -129,10 -154,27 -177,11 159,83 133,90 108,31 81,37 56,83 32,20 -0,36 -37,26 -104,46 -158,83 156,43 118,68 95,16 112,18 170,18 mod dB -0,06 -0,17 -0,26 -0,19 -0,32 -0,95 -3,13 -6,28 -12,44 -11,02 -8,60 -7,90 -10,21 -10,20 -10,87 -11,82 -13,75 -13,72 -13,95 -15,15 -15,78 -15,57 -20,24 -19,36 -18,36 -20,65 -17,69 -18,18 -15,31 -13,49 -11,73 -11,60 -10,29 -8,52 -7,30 -7,39 -4,69 -3,75 -3,23 -2,74 -2,57 -2,56 -2,53 S22 pha /° -16,47 -32,94 -48,70 -66,41 -86,37 -109,99 -134,29 -148,92 -152,39 -127,42 -138,79 -148,31 -167,46 -161,72 -166,58 179,69 179,91 -176,79 168,88 167,61 157,73 137,58 133,08 132,46 101,23 80,50 61,37 37,45 24,91 5,75 -9,23 -21,67 -23,61 -33,55 -45,47 -51,37 -68,35 -85,06 -99,24 -112,94 -124,78 -135,15 -145,16 Ref. : DSCHA30932158 -07-June-02 3/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier Typical On wafer Power CW Measurements Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA CHA3093c Ref. : DSCHA30932158 -07-June-02 4/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Ref. : DSCHA30932158 -07-June-02 5/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Typical IN TEST JIG Power Measurements in temperature Note : Jig losses included (1 dB) Bias Conditions : Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA Ref. : DSCHA30932158 -07-June-02 6/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Ref. : DSCHA30932158 -07-June-02 7/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier CHA3093c Typical Bias Tuning The circuit schematic is given below : Vd1 Vd 2,3,4 IN OUT Vg1 Vg 2 Vg 3,4 Vdet For medium power operation, the four drain biases are connected altogether. In a same way, all the gate biases are connected together at the same power supply, tuned to drive a small signal operating current of 300mA. A separate access to the gate voltages of the two first stages ( Vg1,2 ) is provided in order to be able to tune the first stages for the application, as a lower noise amplifier or a multiplier. An additional pad is provided for monitoring the output power, using the Build In Test. This access, when connected to an external resistor of 10 kOhm ( typical value ) provides a DC voltage which follows the output power level. On wafer power measurements versus output power Ref. : DSCHA30932158 -07-June-02 8/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-40GHz Medium Power Amplifier Chip Assembly and Mechanical Data CHA3093c Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions. ( Chip thickness : 100µm.all dimensions are in micrometers) Number 1 2 3 4 Size (x,y) µm 34 / 98 48 / 68 98 / 34 34 / 98 Center position (x,y) µm (Refered to bottom left origin) 773 / 689 68 /34 800 / 43 1237/ 73 Pickup Pillow Ref. : DSCHA30932158 -07-June-02 9/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3093c Ordering Information Chip form : CHA3093c99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHA30932158 -07-June-02 10/10 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09