CHA4094

CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Typical on wafer measurements : 15 Main Features ■ Broadband performances ■ 22 dBm output power ( 1dB gain comp. ) ■ 9 dB ± 1 dB gain ■ Chip size : 1.65 X 2.05 X 0.10 mm 10 5 0 -5 -10 Gain (dB) -15 -20 -25 -30 28 30 32 34 36 38 40 42 OUT IN Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Small signal gain Output power at 1dB gain compression Bias current Parameter Operating frequency range Min 36 7 Typ 9 22 750 Max 40 Unit GHz dB dBm 920 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA40949349 – 15 Dec. 99 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA4094 Tamb = +25°C, Vd1,2,3 = 3.5Volts Symbol Fop G ∆G Is P1db VSWRin 36-40GHz High Power Amplifier Electrical Characteristics for Broadband Operation Parameter Operating frequency range (1) Small signal gain (1) (2) Small signal gain flatness (1) (2) Reverse isolation (1) Pulsed Output power at 1dB gain compression (1) Input VSWR (1) Min 36 7 Typ Max 40 Unit GHz dB dB dB dBm 9 ±1 30 22 2.0:1 2.0:1 750 920 VSWRout Output VSWR (1) Id Bias current (3) mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less. (2) Vd1, 2, 3 = 2Volts (3) Depends on Biasing point, see application note for recommended biasing point Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Vd Id Vg Ta Drain bias voltage Drain bias current Gate bias voltage Operating temperature range Parameter Values 4 1200 -2 to +0.4 -40 to +85 Unit V mA V °C Tstg (1) Storage temperature range -55 to +155 °C Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHA40949349 – 15 Dec. 99 2/4 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz High Power Amplifier Typical On Jig Measurements Bias Conditions : Tamb = +25°C, Vd = 3.5Volt, Vg = -0.2Volt. 15 10 5 Gain CHA4094 (dB) 0 -5 -10 -15 -20 30 32 34 36 38 40 OUT IN Frequency (GHz) 25 23 21 19 17 15 13 11 9 7 5 -5 25 23 21 19 17 15 13 11 9 7 5 -5 Freq= 36 GHz Pout (dBm) Freq= 38GHz Pout (dBm) Gain (dB) Gain (dB) 0 5 10 15 20 0 5 10 15 Input power (dBm) 25 23 21 19 17 15 13 11 9 7 5 -5 Input power (dBm) Freq= 40GHz Pout (dBm) Gain (dB) 0 5 10 15 Input power (dBm) Application note The given DC Bias condition in table or curves are for class A biasing point. This amplifier could be used in class AB. For this the Gate voltage must be adjusted for a total drain supply current of typically 500mA. The loss in linear gain is around 0.4dB, but the output power at 1dB compression point is higher, between 0.5 and 1dBm more. This biasing point shows a main advantage in regard of thermal aspect. Indeed the junction temperature in transistor decreases approximatively of 10°C for 20% reduction in drain current. Ref. : DSCHA40949349 – 15 Dec. 99 3/4 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA4094 36-40GHz High Power Amplifier Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ordering Information Chip form : CHA4094-99F/00 Information furnished is believed to be accurate and reliable. However united monolithic semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors S.A.S. Ref. : DSCHA40949349 – 15 Dec. 99 4/4 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09