CHA4693-QGG

CHA4693-QGG RoHS COMPLIANT 17-27GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA4693-QGG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, typically commercial communication systems. The circuit is manufactured with a power pHEMT process, 0.15µm gate length, via holes through the substrate and air bridges. RFin UMS A4693 YYWW Vd1, Vd2 It is available in lead-free SMD package. RFout Gc1 Vg12 Gc2 Gc3 Vg3 Main Features ■ Broadband performance 17-27GHz On board measurements 24 20 ■ 20dB gain ■ 28dBm output IP3 @ gain max ■ 24dB gain control range ■ 28L-QFN5x5 ■ ESD protected (see page 14) Linear Gain (dB) 16 12 8 4 0 -4 -8 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) Main Characteristics Tamb. = 25° Vd = 4.5V C, Symbol Fop G Gc OIP3 Parameter Operating frequency range Small signal gain Gain control range Output Intercept Point order 3 @ gain max. Min 17 20 24 28 Typ Max 27 Unit GHz dB dB dBm ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA4693-QGG8144 - 23 May 08 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA4693-QGG Electrical Characteristics 17-27GHz Variable Gain Amplifier Tamb. = 25° Vd 1,2 = 4.5V, GcX with X=1,2,3 C, Symbol Fop G NF Parameter Operating frequency range Nominal gain @ gain max. Noise Figure @ gain max. Noise Figure @ gain min. RLin Input Return Loss (Fop21GHz) (any GcX) RLout Output Return Loss (Fop21GHz) (any GcX) OIP3 Output 3rd order Intercept Point @ gain max. Output 3rd order Intercept Point @ gain min. P1dB Output Power at 1dB gain compression @ gain max. Gain control range (Fop20GHz) Vd1,2 Id Idc Vg12,3 GcX DC drain voltage Drain bias quiescent current (*) Drain current at 1dB gain compression Gate bias voltage DC gain control voltage -2 Min 17 20 7.5 24 -9 -12 -9 -12 28 19 22 22 24 4.5 250 300 -1.2 +0,6 Typ Max 27 Unit GHz dB dB dB dB dB dB dB dBm dBm dBm dB dB V mA mA V V Gc (*) Id not affected by GcX. These values are representative of on board measurements as defined on the drawing 97365 (see page 16). Ref. : DSCHA4693-QGG8144 - 23 May 08 2/16 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax: +33 (0)1 69 33 03 09 17-27GHz Variable Gain Amplifier Absolute Maximum Ratings (*) Tamb = +25° C Symbol Vd1,2 Id Vg GcX Pin Top Tj Tstg Drain bias voltage Power supply quiescent current Gate bias voltage DC gain control voltage RF input power @ gain max. Operating temperature range Junction temperature Storage temperature range Parameter CHA4693-QGG Values 5 300 -2 to 0 -2.5 to +1 8 -40 to +85 175 -55 to +125 Unit V mA V V dBm ° C ° C ° C (*) Operation of this device above anyone of these parameters may cause permanent damage. Ref: DSCHA4693-QGG8144 - 23 May 08 3/16 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA4693-QGG 17-27GHz Variable Gain Amplifier Device thermal performances: All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back side side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintened below than the maximum temperature specified in order to guarantee the nominal device life time (MTTF) (see the curve Pdis. Max). DEVICE THERMAL SPECIFICATION : CHA4693-QGG Max. junction temperature (Tj max) : 169 °C Max. continuous dissipated power @ Tcase= 85 °C : 1,1 W => Pdiss derating above Tcase= 85 °C : 13 mW /°C Junction-Case thermal resistance (Rth J-C)* :