CHA5010B

CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg Vd Main Features ¦ Broadband performance : 9-10.5GHz ¦ 27dBm output power (pulsed meas., -1dB gain compression) ¦ 15dB gain ¦ ± 1.5dB gain flatness ¦ Chip size : 2,09 x 1,27 x 0.10 mm IN OUT Main Characteristics Tamb. = 25°C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power (Pulsed meas., Pin = +13dBm) Min 9 14 26 15 27 Typ Max 10.5 Unit GHz dB dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50100096 - 05-Apr-00 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5010b Electrical Characteristics Tamb = +25°C, Vd = 8V, Vg = -1.5V Symbol Fop G ∆G P1db PAE VSWRin Id X Band Driver Amplifier (1) Parameter Operating frequency range Small signal gain @ Pin = +5dBm Small signal gain flatness Pulsed output power @ Pin = +13dBm Power added efficiency at saturation Input VSWR (2) Bias current Min 9 14 Typ Max 10.5 Unit GHz dB dB dBm % 15 ± 1.5 26 27 15 2.0:1 520 mA (1) These values are representative of on-wafer pulsed measurements that are made without bonding wires at the RF ports. (2) Vd = 3.5V, Vg = -1.5V, [S] parameter measurements. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Vd Pdiss Vg Pin Ta Tstg Parameter Positive supply voltage Maximum power dissipated Negative supply voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values +10 7.0 @ Ta = +25°C 4.3 @ Ta = +70°C -3.5 to 0 +20 -25 to +70 -55 to +125 Unit V W V dBm °C °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA50100096 - 05-Apr-00 2/4 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X Band Driver Amplifier Typical On Wafer Scattering Parameters Tamb = +25°C, Bias Conditions : Vd = +3.5V, Vg = -1.5V Freq. GHz 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 CHA5010b S11 dB -5.35 -3.66 -2.44 -1.64 -1.23 -1.14 -1.35 -1.85 -2.76 -4.02 -5.77 -9.90 -30.64 -16.21 -17.14 -16.15 -14.23 -14.32 -12.68 -9.50 -7.26 -5.60 -4.23 -3.17 -2.32 -1.69 -1.28 -0.91 -0.69 -0.54 -0.43 -0.40 -0.38 S11 /° -109.2 -124.6 -139.2 -153.7 -168.0 178.2 164.6 150.7 136.2 121.9 103.0 70.0 -156.2 158.2 154.5 161.7 140.0 79.1 -4.8 -53.5 -78.7 -94.5 -106.5 -117.0 -126.3 -134.9 -142.7 -149.7 -155.9 -161.7 -166.8 -171.6 -175.6 S12 dB -55.93 -49.08 -55.27 -65.52 -65.41 -66.55 -62.69 -63.21 -61.27 -52.79 -45.72 -38.39 -33.93 -34.35 -34.69 -34.10 -32.64 -32.41 -34.15 -37.14 -40.31 -43.56 -46.48 -49.61 -51.81 -54.83 -59.52 -62.73 -61.49 -68.06 -58.31 -58.30 -63.76 S12 /° -22.8 -104.8 146.9 -164.9 174.6 111.1 58.7 17.3 25.1 -30.6 -76.9 -139.7 139.3 72.7 26.2 -15.8 -63.2 -118.3 -174.5 140.8 103.6 69.4 44.1 13.0 -18.7 -53.3 -66.4 -147.8 170.2 127.7 125.2 126.4 97.9 S21 dB -17.94 -12.92 -22.15 -32.08 -41.95 -55.23 -41.77 -24.61 -7.89 0.85 6.90 13.60 17.69 16.58 15.54 15.56 16.05 15.80 13.21 9.36 5.50 1.81 -1.77 -5.36 -8.95 -12.57 -16.24 -19.95 -24.09 -28.46 -33.59 -38.98 -45.29 S21 /° 61.1 -13.8 -111.5 -148.9 173.3 170.7 -130.7 -130.4 177.7 102.2 45.0 -16.2 -100.9 -171.5 138.6 93.0 42.9 -15.8 -75.2 -123.9 -164.3 159.5 125.7 93.8 63.3 33.7 4.8 -24.0 -53.2 -82.7 -109.6 -136.5 -159.7 S22 dB -0.89 -5.12 -1.14 -0.66 -0.79 -1.10 -1.69 -2.70 -4.52 -7.17 -9.17 -6.75 -7.63 -17.46 -10.44 -6.80 -5.52 -6.78 -9.67 -8.56 -6.54 -5.09 -4.02 -3.23 -2.58 -2.06 -1.66 -1.34 -1.07 -0.85 -0.69 -0.56 -0.45 S22 /° -113.5 -132.4 -127.3 -148.8 -166.6 175.7 157.1 135.3 107.9 70.7 6.2 -76.9 -155.2 -143.4 -121.2 -145.7 177.5 121.5 41.0 -26.9 -61.6 -81.6 -95.5 -105.9 -114.3 -121.6 -128.1 -134.2 -139.8 -145.0 -149.6 -154.0 -157.7 Ref. : DSCHA50100096 - 05-Apr-00 3/4 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5010b Chip Mechanical Data X Band Driver Amplifier 74 426 990 456 74 Gnd 1120 Vg1 Vd 1270 ± 35 IN 450 OUT 355 2090 ± 35 UMS All dimensions are in micrometers Pads : 100µm x 100µm Thickness: 100µm ± 10µm Ordering Information Chip form : CHA5010b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50100096 - 05-Apr-00 4/4 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09