CHA5012

CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Main Features ■ Frequency band : 9.2 -10.8 GHz ■ Output power (P3dB) : 29.5 dBm ■ Power added efficiency (PAE_3dBc) : 40 % ■ Two biasing modes: • Digital control thanks to TTL interface • Analog control thanks to Biasing circuit ■ Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @ 3dBc and Linear Gain (Temperature 25° C) Main Characteristics Tamb = +25° Vc = +7.5V (Pulse 100µs 20%) C, Symbol Fop G P3dB Icq Parameter Operating frequency range Small signal gain Output power at 3dB compression Power supply quiescent current Min 9.2 21 23 29.5 Typ Max 10.8 Unit GHz dB dBm mA 200 ESD Protections : Electrostatic discharge sensitive device observe handling precautions Ref. : DSCHA50126286 - 13 Oct 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5012 Electrical Characteristics Vc= +7.5V (Pulse 100µs 20%) Symbol Top Fop G ∆G ∆G_T P1dB P3dB X Band Driver Amplifier Parameter Operating temperature range Operating frequency range Small signal gain at 25° C Small signal gain flatness at 25° C Linear gain variation vs temperature Output power at 1dB compression at 25° C Output power at 3dB compression at 25° C Output power at 3dB compression at 80° C Min -40 9.2 21 Typ Max 80 10.8 Unit ° C GHz dB dB dB/° C d Bm dBm 23 ±0.5 -0.03 28 25 28 27.5 33 30 29.5 29 40 37 -12 -10 7.5 200 290 5 10 5 1 -10 -7 PAE_3dBc Pae at 3dB compression at 25° C Pae at 3dB compression at 80° C % dB dB V mA mA V mA V mA dBS11 dBS22 Vc Icq Ic_3dBc Vctrl Ictrl TI I_TI Input Return Loss Output Return Loss Power supply voltage Power supply quiescent current (1) Consumption under 3dB compression Collector current control voltage Biasing circuit consumption TTL input voltage TTL input current (1) For Vc=7.5V, TTL interface settles Icq to 200 mA . If needed, Icq can be tuned thanks to Vctrl if the biasing circuit is used. Absolute Maximum Ratings (2) Tamb = 25° C Symbol Cmp Vc Icq Ic_sat Vct Tj Tstg (2) (3) (4) (5) Parameter Compression level (3) Power supply voltage (4) Power supply quiescent current Power supply current in saturation Collector current control voltage Maximum Junction temperature (5) Storage temperature range Values 9 10 320 350 6.5 175 -55 to +125 Unit dB V mA mA V ° C ° C Operation of this device above anyone of these parameters may cause permanent damage. For higher compression the level limit can be increased by decreasing the voltage Vc using the rate 0.5 V / dBc Without RF input power Equivalent Thermal Resistance to Backside : 55° W C/ 2/8 Specifications subject to change without notice Ref. : DSCHA50126286 - 13 Oct 06 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X Band Driver Amplifier Typical measurement characteristics Measurement : CHA5012 Tamb=25° Vc=7.5V, Ic (Quiescent) = 200mA, Pulse w idth=100µs, Duty cycle = 20% C, Linear gain vs frequency and temperature Output Power@3dBc vs frequency and temperature Ref. : DSCHA50126286 - 13 Oct 06 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5012 X Band Driver Amplifier Power added efficiency@3dBc vs frequency Collector current @3dBc vs frequency Ref. : DSCHA50126286 - 13 Oct 06 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X Band Driver Amplifier CHA5012 23456 78 9 10 11 1 12 Chip Mechanical Data and Pin references Chip thickness = 100 +/- 10 µm RF pads (1, 12) = 118 x 68 µm² DC pads (2, 3, 4, 5, 9,6, 7, 8, 9, 10, 11) = 96 x 96 µm² Pin number 1 7, 9 5, 8 2 4 10 3, 6, 11 12 Pin name IN Vctrl TI TO GND Vc OUT Description Input RF port NC Collector current control voltage TTL input TTL output Ground (NC) Power supply voltage Output RF port Ref. : DSCHA50126286 - 13 Oct 06 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5012 X Band Driver Amplifier Assembly recommendations in test fixture (using TTL interface) Assembly recommendations in test fixture (using Biasing circuits) Ref. : DSCHA50126286 - 13 Oct 06 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X Band Driver Amplifier Note: CHA5012 Ref. : DSCHA50126286 - 13 Oct 06 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5012 X Band Driver Amplifier Ordering Information Chip form : CHA5012-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50126286 - 13 Oct 06 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09