CHA5056

CHA5056 RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5056 is three-stage monolithic high power amplifier. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes through the substrate. It is supplied in chip form. P1dB and Linear Gain versus Frequency 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 16 17 18 19 20 21 22 23 24 25 26 27 28 Frequency (GHz) Vd1 RFin Vd2 Vd3 RFout Vg1,2 Vg3Vd3 ■ Broadband performance 17-27GHz ■ 21dB Linear Gain ■ ESD protected ■ 29dBm Output Power @1dB compression ■ DC power consumption @1dB compression: 940mA@4.5V ■ Chip size: 3.15 x 2.2 x 0.1mm G a in (d B ) & P 1 d B (d B m ) Main Features Typical On Wafer Measurement Main Characteristics Tamb. = 25° Vd = 4.5V C, Symbol Fop Parameter Operating frequency range Small signal gain Output power @ 1dB gain compression Drain current @ 1dB gain compression Min 17 Typ Max 27 Unit GHz dB dBm mA G P1dB Id1dB 21 29 940 ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref: DSCHA50567211 - 30 Jul 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5056 Electrical Characteristics 17-27GHz High Power Amplifier Tamb. = 25° Vd = 4,5V and Id = 890mA, CW biasing mode. These values are representative of C; on wafer measurements. Symbol Fop G P1dB Parameter Operating frequency range Small signal gain Pulsed output power at 1dB compression (1) Min 17 Typ Max 27 Unit GHz dB dBm 21 29 S11 S22 OIP3 Vd 1,2,3 Vg 1-2,3 Id Id1dB Input return loss Ouput return loss Output IP3 DC Drain Voltage DC Gate Voltage Small Signal Bias current (2) Bias current at 1dB compression 2.0:1 2.2:1 39 4.5 -1.7 890 940 dBm V V mA mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) This parameter is fixed by gate voltage Vg. Absolute Maximum Ratings Tamb. = 25° (1) C Symbol Vd Id Vg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage Maximum Small Signal Bias current Gate bias voltage Maximum input power overdrive Maximum channel temperature Operating temperature range Storage temperature range Values +5 1100 -4 to +0.8 +13.0 +175 -40 to +85 -55 to +125 Unit V mA V dBm ° C ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref: DSCHA50567211 - 30 Jul 07 2/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 17-27GHz High Power Amplifier Typical Measured Performance Pulsed On wafer measurement (without bonding wires at the RF ports) Tamb = +25° Vd = +4.5V, Small Signal Id = 890mA C, Linear Gain & P1dB & Psat versus Frequency 32 30 28 CHA5056 Gain(dB) & Pout(dBm) 26 24 22 20 18 16 14 16 17 18 19 20 21 22 23 24 25 26 27 28 Linear Gain (dB) P1dB (dBm) Psat (dBm) Frequency (GHz) Gain & Pout versus Pin @Freq=17GHz 32 30 28 26 Gain (dB) & Pout (dBm) 24 22 20 18 16 14 12 10 8 -10 -8 -6 -4 -2 0 2 Pin (dBm) 4 6 8 10 12 Gain (dB) Pout (dBm) Ref: DSCHA50567211 - 30 Jul 07 3/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5056 17-27GHz High Power Amplifier Gain & Pout versus Pin @Freq=21GHz 32 30 28 Gain (dB) & Pout (dBm) 26 24 22 20 18 16 14 12 10 8 -10 -8 -6 -4 -2 0 2 Pin (dBm) 4 6 8 10 12 Gain (dB) Pout (dBm) Gain & Pout versus Pin @Freq=27GHz 32 30 28 26 Gain (dB) & Pout (dBm) 24 22 20 18 16 14 12 10 8 -10 -8 -6 -4 -2 0 2 Pin (dBm) 4 6 8 10 12 Pout (dBm) Gain (dB) Ref: DSCHA50567211 - 30 Jul 07 4/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 17-27GHz High Power Amplifier Typical Measured Performance On JIG measurement: Tamb = +25° Vd = +4.5V, Id = 890mA C, C/I3 versus Single Carrier Level Output Power at 25° C 54 52 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 9 10 CHA5056 C/I3 (dBc) 17 GHz 19 GHz 20 GHz 21 GHz 23 GHz 25 GHz 26 GHz 27 GHz 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Single Carrier Level Output Power (dBm) C/I3 versus Temperature at 20GHz 53 51 49 47 45 43 41 C/I3 (dBc) 39 37 35 33 31 29 27 25 23 21 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Single Carrier Level Output Power (dBm) -40°C +25°C +75°C Ref: DSCHA50567211 - 30 Jul 07 5/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5056 17-27GHz High Power Amplifier C/I3 versus Temperature at 23GHz 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 9 10 11 12 13 14 15 16 17 18 19 -40°C +25°C +75°C C/I3 (dBc) 20 21 22 23 24 25 26 Single Carrier Level Output Power (dBm) Chip Assembly and Mechanical Data UNITS: µm Tol: +/-35µm Ref: DSCHA50567211 - 30 Jul 07 6/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 17-27GHz High Power Amplifier Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered. DC Pads Size: 114/114 µm, RF Pads Size: 129/204 µm, Chip thickness: 100 µm. RF wire bonding length: 700µm max CHA5056 To VD1, 2 DC Gate supply To VD3 DC Drain supply 10nF 10nF 120pF 120pF 120pF 120pF 120pF 120pF 10nF 10nF 10nF To VG1, 2 DC Gate supply To VG3 DC Gate To VD3 DC Gate supply supply Ref: DSCHA50567211 - 30 Jul 07 7/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA5056 Note 17-27GHz High Power Amplifier Due to ESD protection RFin and RFout are DC grounded, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vd1 Vd2 Vd3 RFin RFout Vg1, 2 Vg3 Vd3 ESD protections are also implemented on gate accesses. Ordering Information Chip form: CHA5056-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref: DSCHA50567211 - 30 Jul 07 8/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09