CHA5093

CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Gain & RLoss (dB) 25 Main Features Performances : 22-26GHz 29dBm output power 20 dB ± 1.5dB gain DC power consumption, 600mA @ 6V Chip size : 3.27 x 2.47 x 0.10 mm 20 15 10 5 0 -5 -10 -15 -20 -25 15 20 Frequency 25 30 S11 S22 Typical on Wafer Measurements Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 22 18 28 Typ Max 26 Unit GHz dB dBm 20 29 600 900 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50930129 -09 May-00 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5093 Electrical Characteristics Tamb = +25°C, Vd = 6V Symbol Fop G ∆G Is P1dB P03 IP3 PAE VSWRin 22-26GHz High Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Pulsed output power at 1dB compression (1) Output power at 3dB gain compression 3rd order intercept point (2) Power added efficiency at 1dB comp. Input VSWR Min 22 18 Typ Max 26 Unit GHz dB dB dB dBm dBm dBm % 20 ±1.5 50 28 29 29.5 40 19 2.3:1 2.3:1 170 600 900 VSWRout Output VSWR Tj Id Junction temperature for 80°C backside Bias current °C mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Vd Id Vg Vgd Pin Ta Tstg Parameter Drain bias voltage Drain bias current Gate bias voltage Negative gate drain voltage ( = Vg - Vd) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 6 1200 -2.5 to +0.4 -8 +12 -40 to +80 -55 to +155 Unit V mA V V dBm °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA50930129 -09 May-00 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 22-26GHz High Power Amplifier Typical On Wafer Scattering Parameters Bias Conditions : Vd = +2V, Vg = -0.1V Freq GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 dB -0,59 -0,38 -0,57 -0,92 -1,81 -3,56 -6,86 -11,49 -11,08 -7,5 -5,5 -4,65 -4,49 -4,54 -5,01 -5,95 -7,54 -10,08 -13,87 -18,32 -21,53 -13,29 -10,62 -12,11 -23,82 -11,02 -5,56 -3,27 -2,09 -1,33 -0,78 -0,62 -0,41 -0,4 -0,38 -0,37 -0,42 -0,6 -0,71 -0,75 S11 /° 169,8 158,6 146,5 131,5 112,8 88,7 56,1 2 -75,8 -122,7 -150,3 -170,2 174,7 161,9 149 137,3 125,2 116,3 114,1 120,1 -166,1 -152,4 -174,2 161,8 -175,5 -104,7 -127,3 -144,5 -159,2 -170,7 178,1 168,3 159,5 151,3 144 136,5 129,1 121,2 114,6 106,8 S12 dB -83,89 -94,7 -90,83 -87,53 -91,02 -88,88 -93,06 -89,41 -77,69 -73,31 -67,65 -64,52 -60,09 -57,15 -54,69 -52,41 -54,05 -54,29 -53,07 -55,69 -55,41 -53,16 -56,67 -64,73 -61,49 -55,53 -53,1 -49,46 -49,07 -47,23 -47,06 -50,11 -55,89 -61,66 -66,3 -59,52 -57,63 -46,51 -45,63 -50,77 S12 /° -9,2 -97,3 40,1 -65,9 -172,1 -109,5 -18,3 -123,6 -57,9 -105,8 -103,5 -128,8 -138,2 -165,4 165,9 131,9 103,3 99,6 70 61,4 49,3 28,6 -23,7 -101,8 109,9 89,3 73 59,2 21,2 2,2 -20,4 -56,1 -68,4 -95,4 -14,3 15,6 -6 1,1 -40,8 -87,7 S21 dB -51,47 -66,17 -62,89 -55,62 -54,96 -49,83 -45,68 -28,33 -13,56 -4,53 2,35 9,41 15,11 13,29 12,35 13,33 15,41 17,95 20,07 21,69 22,71 23,28 23,74 23,55 22,98 21,32 18,44 15,1 11,56 7,22 2,57 -2,99 -9,66 -22,01 -14,55 -14,65 -18,82 -23,23 -27,11 -29,94 S21 /° 60 -14,6 156,2 -37,1 70,7 87,6 47 121,7 56,8 -7,7 -66,5 -125,1 147,6 74,3 33,4 -1,5 -38,2 -81,4 -128,3 179,9 128,5 77,4 24,1 -30,6 -88,4 -147 157,6 107,4 59,1 12,8 -29,9 -69,1 -104 -110,4 -69,1 -130,2 -168,4 162,3 137,4 111,9 CHA5093 S22 dB -0,31 -0,04 -0,04 -0,07 -0,08 -0,09 -0,1 -0,12 -0,2 -0,29 -0,45 -0,84 -1,9 -2,08 -2,48 -3,31 -4,38 -5,87 -7,16 -8,31 -9,09 -8,63 -8,36 -7,39 -6,07 -4,94 -4,11 -3,64 -3,14 -2,61 -2,29 -2,08 -1,96 -1,99 -1,86 -1,68 -1,73 -1,74 -1,8 -1,92 S22 /° -10,4 -22,2 -33,3 -44,6 -55,8 -66,9 -78,2 -90 -102,3 -114,9 -128,5 -143,5 -157 -168,6 174,5 155,3 133,5 109,1 81 49 15,1 -13,6 -36,8 -53 -67,6 -82,5 -97 -109,9 -121,3 -131,9 -143,6 -154,5 -165,5 -175,4 175,9 164,4 153,9 143,6 132 121,4 Ref. : DSCHA50930129 -09 May-00 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5093 Typical on Wafer Measurements Bias Conditions: 22-26GHz High Power Amplifier Vd=2V, Vg= -0.2V, Id= 400mA Gain & RLoss (dB) 25 20 15 10 5 0 -5 -10 -15 -20 -25 15 20 Frequency 25 30 S11 S22 Typical on Jig Measurements Bias conditions: Vd=6V, Vg =-0.4V, Id=580mA Gain & Rloss. ( dB) 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 S11 S22 20 22 24 26 28 30 Frequency (GHz) Ref. : DSCHA50930129 -09 May-00 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 22-26GHz High Power Amplifier Typical on Jig Measurements Bias conditions: Vd=6V, Vg =-0.4V, Id=600mA CHA5093 30 28 26 24 Gain (dB) 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output power (dBm) 26GHz 24GHz 27GHz 22GHz 40 32 24 16 8 0 -8 -16 -24 -32 -40 -6 Freq= 24GHz Output power (dBm) 3rd interm. (dBm)* -4 -2 0 2 4 6 8 10 12 14 16 18 20 Input power (dBm) * It is a standard 2 tones measurement with an input signal F1 + F2, (F2 = F1 + 10MHz). The third order is measured at the 2F2-F1 frequency. Ref. : DSCHA50930129 -09 May-00 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5093 22-26GHz High Power Amplifier Chip Assembly and Mechanical Data To Vg1,2,3 DC Gate supply feed 1nF To Vd3 DC Drain supply feed 100pF 100pF In Out 100pF 100pF To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA50930129 -09 May-00 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 22-26GHz High Power Amplifier Application note CHA5093 The given DC Bias condition in table or curves are for optimum output power. To optimize the gain a drain voltage of 5V could be apply. With this biasing point , the output power at 1dB compression decreases by around 1dBm. The curves below show typical jig measurements versus drain & gate voltages. 24 22 20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 28 30 Frequency (GHz) Gain with Vd=5V, Vg=-0,4V Gain with Vd=5V, Vg=-0,2V Gain with Vd=6V, Vg=-0,4V Ref. : DSCHA50930129 -09 May-00 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5093 22-26GHz High Power Amplifier Ordering Information Chip form : CHA5093-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50930129 -09 May-00 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09