CHA5215A

CHA5215a 5.8GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combination of a detected output voltage and an important gain control dynamic range. The circuit is manufactured with a standard 0.7µm implanted power MESFET, air bridges, via holes through the substrate and electron beam gate lithography process. It is supplied in chip form or in ceramic flat-pack package. Gc Vg Vd Pc IN OUT Ref Block diagram 30 25 20 15 10 5 0 Main Features ■ W ide operating frequency range ■ High saturated output power ■ High linearity ■ High gain ■ High dynamic gain control ■ Output power monitor ■ Chip dimensions : 2.47 x 1.27 x 0.10 mm Gain (dB) 5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 7 Frequency (GHz) Main Characteristics Tamb = +25°C Symbol Fop Gmax ∆G Psat Parameter Operating frequency range Maximum gain Gain control range Saturated output power 10 Min 5 Typ 5.8 25 15 27 Max 7 Unit GHz dB dB dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA52150160 -08-Jun-00 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5215a Electrical Characteristics Tamb = +25°C Symbol Fop Glin Gdr Gc Pout Sdet Vref RLin RLout Vd Id Vg Ig Parameter Operating frequency range Linear gain (Gc=-5V) Gain control dynamic range Gain control voltage Saturated output power 5.8GHz Medium Power Amplifier Test Conditions Min. 5 Typ. 5.8 25 Max 7 Unit GHz dB dB 10 -5 15 0 27 -5 550 V dBm mV/mW mV dB dB V Output power monitor sensitivity Reference monitor voltage Input return loss (full band) (2) Output return loss (2) Positive supply voltage (1) Positive supply current Negative supply voltage Negative supply current 7 12 6 9 330 -1.4 15 400 mA V mA (1) Depending on the application a trade-off can be obtained between linearity and power consumption by adjusting the positive supply voltage (from 6 to 9V). (2) The return loss can be improved by using a simple matching network (available on request). Absolute Maximum Ratings (1) Tamb = +25°C Symbol Vd Vg Gc Pin Top Tstg Parameter Positive supply voltage Negative supply voltage Gain control voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 10 -6 to 0 (3) -6 to 0.6 20 -50 to +70 -55 to +155 dBm °C °C Unit V V (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s (3) Choose Vg in order to have Id ≤ 400mA when Vd is applied Ref. : DSCHA52150160 -08-Jun-00 2/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8 GHz Medium Power Amplifier Typical On Wafer Scattering Parameters Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = -5V Freq. GHz 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7 S11 dB -9.23 -9.05 -8.84 -8.65 -8.44 -8.25 -8.07 -7.93 -7.89 -7.99 -8.27 -8.64 -9.03 -9.39 -9.73 -10.1 -10.52 -11 -11.56 -12.09 -12.62 -13.05 -13.21 -13.14 -12.77 -12.18 -11.48 -10.65 -9.76 -8.9 -8.03 S11 /° 5.6 0.4 -5 -10.8 -16.8 -23.2 -30.1 -37.5 -45.4 -53.7 -61.5 -68.7 -74.9 -80.9 -86.6 -92.4 -97.9 -103.1 -107.6 -11.1 -113.2 -114.5 -114.3 -114.1 -114.4 -115.7 -117.9 -121.7 -126.9 -133.7 -141.9 S12 dB -47.73 -48.42 -48.78 -50.4 -50.72 -51.79 -51.93 -52.56 -52.92 -53.56 -54.49 -55.71 -57.22 -58.74 -60.04 -60.95 -61.36 -61.75 -61.42 -60.99 -60.57 -60.34 -59.89 -59.38 -58.47 -57.61 -56.81 -55.59 -55.19 -54.39 -53.67 S12 /° 162.4 142.3 129.4 113.1 101.3 88.3 73.9 59.8 41.2 22.4 -0.2 -22.4 -45.7 -69.8 -93.3 -119.4 -144.1 -168 170.3 150.8 134.4 117.6 105.9 93.5 82.1 70.1 59.1 44.2 31.3 17.7 0.7 S21 dB 0.33 2.86 5.44 7.93 10.36 12.76 15.1 17.38 19.49 21.31 22.75 23.74 24.35 24.69 24.83 24.88 24.86 24.77 24.65 24.49 24.33 24.19 24.09 24.03 23.98 24.02 24.09 24.2 24.37 24.52 24.65 S21 /° -78.2 -78.2 -89.7 -89.7 -110.2 -110.2 -136.9 -122.7 -171.3 -153.1 146.5 168.2 102.9 124.4 63.8 82.7 29.1 46.1 -2.4 13 -31 -17.1 -57.5 -44.5 -82.9 -70.3 -108.1 -95.4 -134.9 -121.1 -165.1 CHA5215a S22 dB -8.28 -7.72 --7.46 -7.22 -6.96 -6.69 -6.38 -6.1 -5.94 -6.03 -6.46 -7.27 -8.33 -9.44 -10.35 -10.93 -11.21 -11.25 -11.13 -10.98 -10.74 -10.54 -10.35 -10.15 -9.92 -9.63 -9.27 -8.79 -8.35 -7.86 -7.4 S22 /° 105.5 90.6 77.4 -64.7 52.6 52.6 -27.5 13.8 -0.17 -15.9 -30.7 -44 -54.2 -61 -64.5 -66 -66.8 -67.8 -68.9 -70.7 -72.5 -74.4 -76.4 -78.1 -79.2 -80.5 -81.7 -83.3 -85.5 -88.3 -92 Ref. : DSCHA52150160 -08-Jun-00 3/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5215a 5.8GHz Medium Power Amplifier Typical On Wafer Scattering Parameters Bias Conditions : Vd = +5V Id=330mA (Vg = -1.4V) Gc = 0V Freq. GHz 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7 S11 dB -22.97 -22.15 -21.67 -21.35 -21.16 -21.03 -20.94 -21 -21.08 -21.27 -21.5 -21.8 -22.06 -22.27 -22.47 -22.59 -22.69 -22.8 -22.9 -23.14 -23.38 -23.7 -24.15 -24.62 -25.03 -25.04 -24.31 -22.84 -21.18 -19.83 -18.99 S11 /° 169.9 159 149.3 141.2 133.9 127.4 121.3 115.9 110.6 106.4 102.4 99.6 97.1 95.6 94.1 92.9 91.6 90.4 89 88 86.6 86.9 87 89.3 94.1 102.4 110.2 115.5 115.4 111 105.2 S12 dB -34.74 -36.83 -39.2 -41.02 -42.96 -44.55 -46.11 -47.53 -48.79 -50.14 -51.39 -52.81 -54.39 -55.86 -57.39 -58.53 -59.33 -59.48 -59.27 58.76 -58.03 -57.17 -56.52 -55.51 -54.47 -53.41 -52.5 -51.5 -51.21 -51.51 -51.88 S12 /° 25.6 7.2 -7.2 -21.2 -32.2 -44.2 -54.2 -66.2 -77.7 -91.6 -105.3 -121.3 -139.6 -158.3 -177.5 161.5 140.9 119.9 101.7 84.8 68.8 53.3 39.9 27.7 16 1 -14.7 -30.3 -50.7 -68.5 -84.2 S21 dB -6.22 -4.74 -3.27 -1.91 -0.62 0.63 1.84 3.01 4.12 5.13 5.99 6.67 7.14 7.42 7.55 7.58 7.57 7.58 7.62 7.72 7.91 8.19 8.56 9.02 9.55 10.1 10.6 10.89 10.83 10.31 9.39 S21 /° -172.9 -179.4 172 162.4 152 141.2 129.6 117.4 104.3 90.4 75.7 60.5 45.1 30.1 15.9 2.6 -10 -21.7 -32.9 -43.7 -54.2 -64.9 -75.9 -87.5 -100.1 -114.2 -129.9 -147.6 -166.8 173.9 155.9 S22 dB -9.34 -8.85 -8.7 -8.55 -8.42 -8.26 -8.04 -7.8 -7.56 -7.39 -7.32 -7.43 -7.74 -8.24 -8.88 -9.62 -10.38 -11.1 -11.7 -12.14 -12.31 -12.23 -11.83 -11.16 -10.23 -9.15 -8.02 -7.02 -6.33 -6.06 -6.14 S22 /° 98.1 84.5 72.1 60.6 49.6 38.7 27.7 16.4 4.8 -7.3 -19.6 -31.8 -43.2 -53.6 -62.2 -69 -73.8 -76.7 -77.5 -76.8 -74.7 -72.2 -69.4 -67.3 -66.4 -67.5 -70.8 -76.5 -84.2 -92.3 -99.7 Ref. : DSCHA52150160 -08-Jun-00 4/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8 GHz Medium Power Amplifier Typical on Wafer Measurements Bias Conditions : Vd = +5V, Id=330mA (Vg = -1.4V) CHA5215a 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 5 5,2 5,4 5,6 5,8 6 6,2 6,4 Gain (dB) Gmax Gmin 6,6 6,8 7 Frequency (GHz) 0 -5 0 -2 Output return loss (dB) Input return loss (dB) -4 -6 -8 -10 -12 -14 -16 -18 G max G min -10 -15 -20 -25 -30 5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 7 Gmax Gmin -20 5 5,2 5,4 5,6 5,8 6 6,2 6,4 6,6 6,8 7 Frequency (GHz) F requency (G H z) Ref. : DSCHA52150160 -08-Jun-00 5/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5215a 5.8GHz Medium Power Amplifier Typical Packaged Device Measurements 1. Output power monitor characteristic Measurement conditions Bias : Vd = +9V, Id=330mA (Vg = -1.4V) Input signal : non-modulated signal, Fin = 5.8GHz, Pin = -30dBm 0,5 0,25 Detected voltage ( V ) 0 -0,25 -0,5 -0,75 -1 10 12 14 16 18 20 22 24 26 28 30 Pout ( dBm ) 2. Gain control characteristic Measurement conditions Bias : Vd = +9V, Id=330mA (Vg = -1.4V) Input signal : non-modulated signal, Fin = 5.8GHz, Pin = -30dBm 30 25 20 Gain (dB) 15 10 5 0 -5 -4 -3 -2 -1 0 Gain control (V) Ref. : DSCHA52150160 -08-Jun-00 6/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8 GHz Medium Power Amplifier 3. Linearity characteristic Measurement conditions Bias : Vd = +9V, Id=330mA (Vg = -1.4V) Input signal : amplitude modulated signal, Fcarrier = Fo = 5.8GHz, Pcarrier = 4.8dBm Fm = 500kHz, modulation index = 0.7 25 30 Pout at Fo (dBm) [Pout at Fo +/- fm] / [Pout at Fo] (dBc) 10 -10 -30 -50 -70 -90 -3 -2 -1 Gain control (Volts) 0 5.8/-50° 5.8015 5.802 5.8025 5.803 5.8035 CHA5215a Pout at Fo (dBm), Mod. index (dB) 20 15 10 5 0 -5 -10 -15 -3 -2 -1 0 Gain control (Volts) 5.8/-50° 5.8005 30 Pout at Fo (dBm) [Pout at Fo +/- fm] / [Pout at Fo] (dBc) 10 -10 -30 -50 -70 -90 -5 -4 -3 -2 Gain control (Volts) -1 0 5.8/+25°C 5.8005 5.8015 5.802 5.025 5.803 25 Pout at Fo (dBm), Mod. index (dB) 20 15 10 5 0 -5 -10 -15 -5 -4 -3 -2 -1 0 Gain control (Volts) 5.8/+25°C 5.8005 30 Pout at Fo (dBm) [Pout at Fo +/- fm] / [Pout at Fo] (dBc) 10 -10 -30 -50 -70 -90 -5 -4 -3 -2 Gain control (Volts) -1 0 5.8/+70° 5.8005 5.8015 5.802 5.8025 5.803 25 Pout at Fo (dBm), Mod. index (dB) 20 15 10 5 0 -5 -10 -15 -5 -4 -3 -2 -1 0 Gain control (Volts) 5.8/+70° 5.8005 Ref. : DSCHA52150160 -08-Jun-00 7/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5215a Chip Pad Allocation Gc Vg 5.8GHz Medium Power Amplifier Vd Vd Pc IN OUT CHA5215a Ref Input And Output Pin References Pin IN Gc Vg Vd Pc OUT Ref Description RF signal input Gain control input Negative supply voltage Positive supply voltage Power monitor output RF signal output Monitor reference output Ref. : DSCHA52150160 -08-Jun-00 8/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8 GHz Medium Power Amplifier Typical Bias Configuration CHA5215a The typical bias voltage applied to the chip is Vd = 9V and Id=330mA (Vg = -1.4V) Choose Vg in order to have Id around 330mA. Maximum Id is 400mA. Do not apply Vd without Vg. Vg Vd 10nF Gc 10nF Pc IN OUT CHA5215a Ref Chip Mechanical Data CHA5215a Chip size 2470 µm ± 20µm x 1270 µm ± 20µm Thickness: 100µm ± 10µm Ref. : DSCHA52150160 -08-Jun-00 9/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5215a 5.8GHz Medium Power Amplifier Package Mechanical Data (FK) Package Pin Allocation (FK) 1 2 3 4 5 6 7 Pc Vd Vg Gc IN Ref OUT Power monitor output Positive supply voltage Negative supply voltage Gain control input RF signal input Monitor reference output RF signal output Ref. : DSCHA52150160 -08-Jun-00 10/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.8 GHz Medium Power Amplifier CHA5215a Ref. : DSCHA52150160 -08-Jun-00 11/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5215a 5.8GHz Medium Power Amplifier Ordering Information Chip form Flatpack package : CHA5215a99F/00 : CHA5215aFKF/23 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52150160 -08-Jun-00 12/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09