CHA5294

CHA5294 RoHS COMPLIANT 30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 30 28 Linear Gain (dB) Vd1 Vd2 Vd3 Vd4 IN OUT Vg1 Vg2 Vg3 Vg4 Typical on jig Measurements Main Features ¦ Performances : 30-40GHz ¦ 24dBm output power @ 1dB comp. ¦ 26 dB gain ¦ DC power consumption, 500mA @ 4V ¦ Chip size : 4.10 x 1.42 x 0.07 mm 26 24 22 20 18 16 30 32 34 Frequency GHz Pout@-1dB (dBm) 36 38 40 Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 30 Typ Max 40 Unit GHz dB dBm mA 26 24 500 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52946237 - 25 Aug 06 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5294 Tamb = +25°C Symbol Fop G ∆G Is P1dB P03 IP3 VSWRin VSWRout Vd Id 30-40GHz Medium Power Amplifier Electrical Characteristics on wafer Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) Output Intercept point 3rd order Input VSWR (1) Output VSWR(1) Drain bias DC voltage Bias current @ small signal Min 30 Typ Max 40 Unit GHz dB dB dB dBm dBm dBm 24 ±1.5 40 24 25 32 2.0:1 4.0:1 4 500 650 V mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Vd Id Vg Vdg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage with Pin max=0dBm Drain bias current with Vd=4V Gate bias voltage Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +4.5 750 -2 to +0.4 +6.0 +3.0 +175 -40 to +80 -55 to +125 Unit V mA V V dBm °C °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52946237 - 25 Aug 06 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 30-40GHz Medium Power Amplifier Typical on Jig Measurements Bias conditions: Vd=4V, Vg tuned for Id = 500mA Linear Gain versus frequency & temperature 34 32 30 28 26 Gain dB 24 22 20 18 16 14 12 10 30 31 32 33 34 35 Frequency GHz 36 37 CHA5294 -40°C +25°C +85°C 38 39 40 Linear Gain & Output power at 1dB compression vs frequency & temperature 40 38 36 34 Linear Gain dB 32 30 28 26 24 22 20 30 32 34 Frequency GHz Ref. : DSCHA52946237 - 25 Aug 06 3/6 Specifications subject to change without notice 30 28 26 24 22 20 18 16 14 Output power @ 1dB comp. dBm -40°C +25°C +85°C 36 38 40 12 10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5294 30-40GHz Medium Power Amplifier Chip Assembly and Mechanical Data To Vd DC Drain Supply 10nF 120pF Vg1 Vg2 Vg3 Vg4 120pF 10nF To Vg DC Gate Supply Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 70µm) Ref. : DSCHA52946237 - 25 Aug 06 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 30-40GHz Medium Power Amplifier CHA5294 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 70µm thickness, specific care is requested for the handling and assembly. Ref. : DSCHA52946237 - 25 Aug 06 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5294 30-40GHz Medium Power Amplifier Ordering Information Chip form : CHA5294-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52946237 - 25 Aug 06 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09