CHA5295
24.5-26.5GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
32 30
Vd1 Vd2
Vg3 Vd3
Vg1 Vg2 Vd2
Vg3 Vd3
Main Features
■ Performances : 24.5-26.5GHz ■ 30dBm output power @ 1dB comp. ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.05 mm
28 26 24 22 20 18 16 14 12 10 24 24,5 25 25,5 26 26,5 Frequency (GHz)
P-1dB (dBm) Linear Gain (dB) PAE (%)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C Symbol
Fop G P1dB Id
Parameter
Operating frequency range Small signal gain Output power at 1dB gain compression Bias current
Min
24.5 16 29
Typ
17 30 800
Max
26.5
Unit
GHz dB dBm mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA529522297 -24-Oct.-02 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5295
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #800mA Symbol
Fop G ∆G Is P1dB P03 IP3 PAE VSWRin
24.5-26.5GHz High Power Amplifier
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) 3 order intercept point (2) (3) Power added efficiency at 1dB comp. Input VSWR
rd
Min
24.5 16
Typ
Max
26.5
Unit
GHz dB dB dB dBm dBm dBm %
17 ±1 50
29
30 31 41 18 3.5:1 2:1 155 800 1000
VSWRout Output VSWR Tj Id Junction temperature for 80°C backside Bias current @ small signal
°C mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. (3) Linearity could be improved with a biasing point around 600mA ( see curves on next pages)
Absolute Maximum Ratings
Tamb. = 25°C (1) Symbol
Vd Id Vg Ig Vdg Pin Tch Ta Tstg
Parameter
Maximum drain bias voltage with Pin max=12dBm Maximum drain bias current Gate bias voltage Gate bias current Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range
Values
+6.25 1400 -2.5 to +0.4 -5 to +5 +8.0 +15 +175 -40 to +80 -55 to +125
Unit
V mA V mA V dBm °C °C °C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA529522297 -24-Oct.-02 2/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24.5-26.5GHz High Power Amplifier
Typical on Jig Measurements (including jig losses)
Bias conditions: Vd=6V, Vg tuned for Id #800mA
20
CHA5295
15
10
Gain & RLoss (dB)
5
0
S11
-5
-10
S22
-15
-20
22
24
26
28
30
32
Frequency (GHz)
Linear Gain & Return Losses versus frequency
32 30 28 26 24 22 20 18 16 14 12 10 24 24,5 25 25,5 26 26,5 Frequency (GHz) Linear Gain, Output power & PAE @ 1dB compression
Ref. : DSCHA529522297 -24-Oct.-02 3/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
P-1dB (dBm)
Linear Gain (dB)
PAE (%)
CHA5295
24.5-26.5GHz High Power Amplifier
20 19 18 17
1300
24,5GHz
25,5GHz
26,5GHz
Current
1250 1200 1150 1100 1050 1000 950 900 850 800
16 15 14 13 12 11 10 14 16 18 20 22 24 26 28 30 32
Output power (dBm)
Output power versus frequency & Drain current @ 25.5GHz
50 46 42 38 34 30 26 22 18
F=24.5GHz F=10MHz
C/I3 (dBc)
14 10
IP3 (dBm)
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output Power(dBm)
C/I3 & IP3 versus DCL output power @ 24.5GHz, 800mA
Ref. : DSCHA529522297 -24-Oct.-02 4/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Drain current (mA) @ 25.5GHz
Gain (dB)
24.5-26.5GHz High Power Amplifier
CHA5295
50 46 42 38 34 30 26 22 18
F=26.5GHz F=10MHz
C/I3 (dBc)
14 10
IP3 (dBm)
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Output Power(dBm)
C/I3 & IP3 versus DCL output power @ 26.5GHz, 800mA
50 48 600mA 46 44
C/I3 ( dB)
42 40 38
+25°C
-35°C 36 34 32 30 12 14 +75°C
800mA
16
18
SCL Output Power (dBm)
20
22
24
C/I3 versus drain current & temperature @ 25.5GHz
Ref. : DSCHA529522297 -24-Oct.-02 5/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5295
24.5-26.5GHz High Power Amplifier
30 28 26 24
Gain (dB)
+25°C - 600mA +25°C - 800mA
-40°C - 600mA -40°C - 800mA
+85°C - 600mA +85°C - 800mA
22 20 18 16 14 12 10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Output power (dBm)
Output power versus temperature & Drain current @ 25.5GHz
Ref. : DSCHA529522297 -24-Oct.-02
6/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24.5-26.5GHz High Power Amplifier
Chip Assembly and Mechanical Data
To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed
CHA5295
To Vg1,2,3 DC Gate supply feed
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 50µm. All dimensions are in micrometers )
Ref. : DSCHA529522297 -24-Oct.-02 7/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5295
Application note
Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage
24.5-26.5GHz High Power Amplifier
Due to 50µm thickness, specific care is requested for the handling and assembly.
Ordering Information
Chip form : CHA5295-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA529522297 -24-Oct.-02
8/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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