CHA5296

CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process on 50µm substrate thickness, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 20 Gain & RLosses (dB) 15 10 5 0 -5 -10 -15 -20 20 22 24 26 28 30 32 34 36 Frequency (GHz) S11 S22 Main Features ■ Performances : 27-30GHz ■ 29dBm output power @ 1dB comp. gain ■ 15 dB ± 1dB gain ■ DC power consumption, 850mA @ 6V ■ Chip size : 3.80 x 2.52 x 0.05 mm Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 27 14 28 Typ 15 29 850 Max 30 Unit GHz dB dBm 1000 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52962147 - 27-May-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5296 Electrical Characteristics Tamb = +25°C, Vd = 6V Id #900mA Symbol Fop G ∆G Is P1dB P03 IP3 PAE VSWRin 27-30GHz High Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) 3 order intercept point (2) Power added efficiency at Psat Input VSWR (2) rd Min 27 14 Typ Max 30 Unit GHz dB dB dB dBm dBm dBm % 15 ±1 50 28 29 29 30 41 12 16 5:1 2.5:1 170 850 1000 VSWRout Output VSWR (2) Tj Id Junction temperature for 80°C backside Bias current @ small signal °C mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Vd Id Vg Vgd Pin Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Negative gate drain voltage ( = Vg - Vd) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Parameter Values 6.25 1450 -2.5 to +0.4 -8 +18 -40 to +80 -55 to +125 Unit V mA V V dBm °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52962147 - 27-May-02 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 27-30GHz High Power Amplifier Typical on Jig Measurements Bias conditions: Vd=6V, Vg tuned for Id = 850mA 20 15 10 Gain & RLosses (dB) 5 CHA5296 0 -5 -10 -15 -20 14 16 18 20 22 24 26 28 S11 S22 30 32 34 36 Frequency (GHz) Linear Gain & Return Losses versus frequency 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 21 22 1200 32GHz Id 30GHz 30GHz 28GHz 26GHz 1100 1000 900 800 700 600 DC Total Drain Current Id (mA) 28GHz 26GHz Gain (dB) & PAE (%) Gain 30GHz 32GHz 30GHz 28GHz 500 400 300 32GHz 200 100 0 PAE 23 24 25 26 27 28 29 30 31 32 33 Output power (dBm) Gain, PAE & DC drain current vs Output power @ different frequencies Ref. : DSCHA52962147 - 27-May-02 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5296 42 38 34 30 26 22 Output power (dBm) 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 Σ((2F1-F2);(2F2-F1)) 27-30GHz High Power Amplifier Σ(F1;F2) IP3=+41dBm Σ((4F1-3F2);(4F2-3F1)) Σ((3F1-2F2);(3F2-2F1)) F=28,5GHz ∆F=10MHz -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Input Power(dBm) IP3 versus total input power @ 28.5GHz 60 55 50 45 C/I (dBc) & IP3 (dBm) 40 35 30 25 20 15 10 5 0 10 12 14 16 18 20 22 24 26 28 30 c/i3 c/i IP3 Total Fundamental Output power (dBm) C/I & IP3 versus total fund. output power @ 28.5GHz (∆F=10MHz) Ref. : DSCHA52962147 - 27-May-02 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 27-30GHz High Power Amplifier Chip Assembly and Mechanical Data CHA5296 Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA52962147 - 27-May-02 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5296 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage 27-30GHz High Power Amplifier Due to 50µm thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5296-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52962147 - 27-May-02 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09