CHA6518

CHA6518 RoHS COMPLIANT 5 – 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Vg Vg Vd Main Features n n n n n n 0.25 µm Power pHEMT Technology 5 – 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT Vd Vg Vd Vg Vd Vd = 8 V Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain Min 5 Typ 33.5 24 Max 18 Unit GHz dBm dB Ref. : DSCHA65185007 - 7 Jan 05 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier Electrical Characteristics Tamb = 25°C (2), Vd=8V, Ic (Quiescient) = 1A, CW biasing mode Symbol F_op G_lin_1 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_3 P_sat_4 P_sat_5 P_sat_6 P_sat_7 PAE_sat Vd Id Vg Top NF CHA6518 Parameter Operating frequency Linear gain Linear gain variation versus temperature Input Return Loss Output Return Loss Saturated output power (5 to 6 GHz) Saturated output power (6 to 7 GHz) Saturated output power (8 to 10 GHz) Saturated output power (11 to 12 GHz) Saturated output power (13 to 14 GHz) Saturated output power (15 to 17 GHz) Saturated output power (18 GHz) Power Added Efficiency in saturation Positive supply voltage Power supply quiescent current (1) Negative supply voltage Operating temperature range (2) Noise Figure Min 5 20 5.5 3.5 32.5 33 32.5 32 32.5 33 32 11 Typ 24 -0.045 10 10 33 34 33 32.5 33 34 32.5 20 8 1 -0.8 Max 18 -30 5 +80 Unit GHz dB dB/°C dB dB dBm dBm dBm dBm dBm dBm dBm % V A V °C dB (1) This parameter is fixed by gate voltage Vg (2) The reference is the back-side of the chip Absolute Maximum Ratings (1) Symbol Pin (2) Vd (2) Id (2) Ig (2) Pd (2) Tj Tstg (1) (2) Parameter Input continuous power Positive supply voltage without RF power Positive supply quiescent current Gate supply current Power dissipation Junction temperature Storage temperature range Values 17 9 1.5 88 13.5 175 -55 to +125 Unit dBm V A mA W °C °C Operation of this device above anyone of these parameters may cause permanent damage. These values are specified for Tamb = 25°C Ref. DSCHA65185007 - 7 Jan 05 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier Typical measured characteristics Measurements in test fixture : Tamb=25°C, Vd=8V, Id (Quiescient) = 1A, CW Biasing mode, Pin=13dBm CHA6518 CHA6518 : Maximum Output Power @ 25°C 38 37 36 35 34 33 32 31 30 29 28 Pout (dBm) 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Freq (GHz) CHA6518 : Power Added Efficieny @ 25°C 40 35 30 PAE (%) 25 20 15 10 5 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Freq (GHz) Ref. DSCHA65185007 - 7 Jan 05 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier CHA6518 CHA6518 : Gain @ Pin=-5dBm & Pin=13dBm 28 27 26 25 Gain(dB) @ Pin=-5dBm Gain(dB) @ Pin=13dBm Gain (dB) 24 23 22 21 20 19 18 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Freq (GHz) Ref. DSCHA65185007 - 7 Jan 05 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier CHA6518 CHA6518 : Noise Figure @ 25°C 28 26 12 11 10 9 Chip1 Gain Chip2 Gain Chip1 NF Chip2 NF 22 20 18 16 14 12 10 8 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 8 7 6 5 4 3 2 Small Signal Gain (dB) 24 Freq (GHz) Ref. DSCHA65185007 - 7 Jan 05 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 NF (dB) 5 – 18 GHz High Power Amplifier Chip Mechanical Data and Pin references CHA6518 16 15 14 13 12 11 10 9 17 12 3 4 5 6 7 8 Chip thickness = 70µm +/- 10µm HF pads (9, 17) = 118 x 196 DC pads (2, 3, 4, 5, 13, 14) = 96 x 96 DC pads (6, 12) = 268 x 96 DC pads 15 = 280 x 96 DC pads (8, 10) = 188 x 96 Pin number 17 4, 14 3, 6, 12, 15 1, 7,11, 16 2, 5, 8, 10, 13 9 Pin name IN VG GND VD OUT Description Input RF port NC Negative supply voltage Ground (NC) Positive supply voltage Output RF port Ref. DSCHA65185007 - 7 Jan 05 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier Assembly recommendations CHA6518 C2 C2 C1 C1 C1 C1 Vg Lbonding Vd Lbonding C1 C1 C1 C1 C1 C2 C2 For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table: Port IN (17) OUT (9) VD (2, 5, 8, 10, 13) VG (3, 6, 12, 15) Connection Inductance (Lbonding) = 0.3nH Inductance (Lbonding) = 0.3nH Inductance ≤ 1nH Inductance ≤ 1nH External capacitor C1 ~ 100pF C2 ~ 100nF C1 ~ 100pF C2 ~ 100nF Ref. DSCHA65185007 - 7 Jan 05 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5 – 18 GHz High Power Amplifier CHA6518 Ordering Information Chip form : CHA6518-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. DSCHA65185007 - 7 Jan 05 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09