CHE1260

CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. It allows the measurement of transmitted and reflected power. It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate and air bridges. It is available in chip form. Incident power detection (mV) 10000 10GHz 12GHz 27GHz 17GHz Vref_R DC_R Vdet_R RF_in RF_out Vdet_I Vdet_I DC_I Vref_I Main Features ■ Wide frequency range 10-27GHz ■ Bidirectionnal detection ■ 30dB dynamic range ■ ESD protected ■ Chip size: 1.41 x 1.41 x 0.1 mm ■ BCB layer protection (see page 8) Vref_I - Vdet_I (mV) 22GHz 1000 100 10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Main Characteristics Tamb = +25° VDC = +4.5V (on DC_I and DC_R) C, Symbol F IL Dr Parameter Frequency range Insertion Loss Dynamic Range Min 10 0.8 30 Typ Max 27 Unit GHz dB dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHE1260-8058 - 28 Feb 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHE1260 Electrical Characteristics Tamb = +25° VDC = +4.5V (on DC_I and DC_R) C, Symbol F IL Cd Dr Pr Parameter Frequency range Insertion Loss Coupler Directivity Dynamic Range Power Range: 10 - 17GHz 17 - 21GHz 21 - 24GHz 24 - 27GHz (for transmitted and/or reflected power) Vdetect_I Voltage detection from transmitted power Vref_I – Vdet_I From Pr_min to Pr_max Vdetect_R Voltage detection from reflected power Vref_R – Vdet_R From Pr_min to Pr_max RLin RLout VDC IDC Input return loss Output return loss Bias Voltage Bias Current (on ports DC_I or DC_R) -1 -3 -6 -8 10-27GHz Detector Min 10 Typ Max 27 Unit GHz dB dB dB 0.8 13 30 dBm 20 to 2500 20 to 2500 -11 -11 4.5 33 dB dB V µA mV mV These values are representative of on-wafer measurements that are made without bonding wires at the RF ports but with 100kΩ resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes, page 8). Absolute Maximum Ratings (1) Tamb = +25° C Symbol VDC Top Tstg P_max Parameter Bias voltage (on ports DC_I and DC_R) Operating temperature range Storage temperature range Maximum power (for transmitted and/or reflected power) Values 6 -40 to +85 -55 to +125 30 Unit V ° C ° C dBm (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. : DSCHE1260-8058 - 28 Feb 08 2/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 10-27GHz Detector Typical on-wafer Sij parameters CHE1260 Tamb = +25° Vdc = +4.5V (on DC_I and DC_R), 100k Ω resistor in parallel on pads Vdet_I, C, Vref_I, Vdet_R and Vref_R (see notes, page 8). Freq (GHz) dB(S11) Ph(S11) (° dB(S12) Ph(S12) (° dB(S2 1) Ph(S21) (° dB(S22) Ph(S22) (° ) ) ) ) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 -32.9 -30.0 -27.7 -25.8 -24.1 -22.6 -21.3 -20.0 -18.8 -17.7 -16.6 -15.0 -14.2 -13.6 -12.9 -12.3 -11.8 -11.4 -11.0 -10.7 -10.5 -10.4 -10.8 -10.9 -10.7 -11.0 -11.1 -11.4 -11.9 -12.5 -13.3 -14.4 -15.1 -16.9 -19.0 -20.3 -20.8 -15.1 -12.5 -10.2 -8.3 -6.9 -5.7 -4.7 54 52 50 47 42 36 31 25 19 13 6 1 -6 -13 -19 -26 -33 -40 -46 -53 -59 -67 -74 -76 -81 -86 -90 -95 -100 -104 -108 -108 -104 -108 -99 -79 -51 -34 -33 -37 -41 -47 -53 -59 -0.1 -0.1 -0.1 -0.1 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -0.3 -0.4 -0.4 -0.5 -0.5 -0.5 -0.6 -0.6 -0.7 -0.7 -0.8 -0.8 -0.9 -0.9 -0.9 -0.9 -1.0 -1.0 -1.0 -1.0 -1.0 -1.1 -1.1 -1.1 -1.1 -1.1 -1.1 -1.3 -1.5 -1.7 -2.1 -2.4 -2.8 -3.3 -13 -20 -27 -33 -40 -46 -53 -60 -66 -73 -79 -86 -93 -99 -106 -113 -119 -126 -132 -139 -146 -152 -158 -165 -172 -179 175 168 161 154 147 140 133 125 118 110 102 93 84 76 67 59 51 43 -0.1 -0.1 -0.1 -0.1 -0.2 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -0.4 -0.4 -0.5 -0.5 -0.5 -0.6 -0.6 -0.7 -0.7 -0.8 -0.8 -0.9 -0.9 -0.9 -0.9 -1.0 -0.9 -1.0 -1.0 -1.0 -1.1 -1.1 -1.1 -1.1 -1.1 -1.1 -1.3 -1.5 -1.7 -2.0 -2.4 -2.8 -3.3 -13 -20 -27 -33 -40 -46 -53 -60 -66 -73 -79 -86 -93 -99 -106 -113 -119 -126 -132 -139 -146 -152 -158 -165 -172 -179 175 168 161 154 147 140 133 125 118 110 102 93 84 76 67 59 51 43 -32.5 -29.8 -27.7 -25.9 -24.1 -22.6 -21.2 -20.0 -18.8 -17.7 -16.6 -15.0 -14.3 -13.5 -12.8 -12.2 -11.8 -11.3 -11.0 -10.6 -10.4 -10.2 -10.5 -10.8 -10.8 -10.8 -11.0 -11.2 -11.7 -12.3 -13.0 -13.7 -14.9 -16.3 -18.0 -19.0 -18.9 -14.7 -12.1 -9.9 -8.2 -6.7 -5.6 -4.6 53 50 49 45 40 34 28 22 17 10 4 -1 -8 -14 -21 -28 -34 -40 -46 -53 -60 -67 -74 -76 -80 -84 -89 -93 -97 -101 -103 -105 -103 -104 -92 -74 -51 -38 -36 -37 -42 -47 -52 -57 Ref: DSCHE1260-8058 - 28 Feb 08 3/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHE1260 Typical Measured Performance On-wafer measurements (without bonding wires at RF ports). 10-27GHz Detector Tamb = +25° Vdc = +4.5V (on DC_I and DC_R), 100k Ω resistor in parallel on pads Vdet_I, C, Vref_I, Vdet_R and Vref_R (see notes, page 8). 0.0 -0.5 -1.0 -1.5 Insertion Loss versus frequency IL (dB) -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Frequency (GHz) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 2 4 6 8 Input and Output Return Losses versus frequency RLin RLout Return Losses (dB) 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Frequency (GHz) Ref. : DSCHE1260-8058 - 28 Feb 08 4/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 10-27GHz Detector CHE1260 Incident power detection versus Incident power @ different frequencies (Vdetect_I) 10000 10GHz 12GHz 27GHz 17GHz Vref_I - Vdet_I (mV) 22GHz 1000 100 10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) The CHE1260-98F is a bidirectionnal detector using a symmetrical bidirectionnal coupler. Therefore the incident power detection versus incident power is identical to the reflective power detection versus reflected power. The reflective power detection versus incident power depends on both the coupler directivity and the reflective environment of the chip. Incident and reflective power detection versus Incident power @ 10GHz (Vdetect_I & Vdetect_R) 10000 Vref_I - Vdet_I & Vref_R-Vdet_R (mV) 1000 Incident Reflective 100 10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Ref: DSCHE1260-8058 - 28 Feb 08 5/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHE1260 10-27GHz Detector Incident and reflective power detection versus Incident power @ 17GHz (Vdetect_I & Vdetect_R) 10000 Vref_I - Vdet_I & Vref_R-Vdet_R (mV) 1000 Incident Reflective 100 10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Incident and reflective power detection versus Incident power @ 22GHz (Vdetect_I & Vdetect_R) 10000 Vref_I - Vdet_I & Vref_R-Vdet_R (mV) 1000 Incident Reflective 100 10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Ref. : DSCHE1260-8058 - 28 Feb 08 6/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 10-27GHz Detector CHE1260 Incident and reflective power detection versus Incident power @ 27GHz (Vdetect_I & Vdetect_R) 10000 Vref_I - Vdet_I & Vref_R-Vdet_R (mV) 1000 Incident Reflective 100 10 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Chip assembly and Mechanical data: DC Pads Size: 100/100 µm, Chip thickness: 100 µm Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered. Ref: DSCHE1260-8058 - 28 Feb 08 7/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHE1260 Note 100kΩ 10-27GHz Detector Vref_R DC_R Vdet_R 100kΩ RF_in RF_in RF_out RF_out 100kΩ Vdet_I Vdet_I DC_I Vref_I 100kΩ Recommended external resistors assembly 100kΩ resistors in parallel with Vdet_I, Vref_I, Vdet_R and Vref_R pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref_X and Vdet_X (X= I or R), the external resistor value should be identical on these ports. For information, a variation of 2% leads around 1mV variation of detected voltage. ESD protections are implemented on Vdet_I, Vref_I, Vdet_R and Vref_R accesses. Due to the BCB coating on the chip, qualification domain implies the chip must be glued. Ordering Information Chip form: CHE1260-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHE1260-8058 - 28 Feb 08 8/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09