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CHE1270-QAG

CHE1270-QAG

  • 厂商:

    UMS

  • 封装:

  • 描述:

    CHE1270-QAG - 12-40GHz Wide Band Detector - United Monolithic Semiconductors

  • 数据手册
  • 价格&库存
CHE1270-QAG 数据手册
CHE1270-QAG RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode (Vdet) and a reference diode (Vref). It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate and air bridges. It is available in leadless SMD package. Vdet Vdet DC Vref UMS E1270 YYWW RF IN CHE1270 Matching Main Features ■ Wide frequency range: 12-40GHz ■ 30dB dynamic range Vdetect= Vref-Vdet (mV) Transmitted power detection (mV) 10000 12 GHz 32GHz 1000 17GHz 37GHz 22GHz 40GHz 27GHz ■ ESD protected ■ 16L-QFN3x3 SMD package 100 10 Main Characteristics Tamb = +25° VDC = +4.5V C, Symbol F Dr RL Parameter Frequency range Dynamic range Return Loss 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input power (dBm) Min 12 Typ Max 40 Unit GHz dB dB 30 -10 ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHE1270-QAG8205 - 25 Jun 08 1/8 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270-QAG Electrical Characteristics (1) Tamb = +25° VDC = +4.5V C, Symbol F Dr IPd Frequency range Dynamic range (for Input Power detection) Input Power detection Parameter 12-40GHz Detector Min 12 Typ Max 40 Unit GHz dB 30 -15 10 to 2000 -10 -8 4.5 70 15 dBm mV Vdetect Voltage detection Vref – Vdet from IPd_min to IPd_max RL Return Loss (12 – 36GHz) Return Loss (36 – 40GHz) VDC IDC Bias Voltage Bias Current dB dB V µA (1) These values are representative of onboard measurements as defined on the drawing 96272-B (page 8) with 27kΩ resistor in parallel on Vdet and Vref pads. Absolute Maximum Ratings (1) Tamb = +25° C Symbol VDC P_max Top Tstg Bias voltage Maximum Power Operating temperature range Storage temperature range Parameter Values 6 18 -40 to +85 -55 to +125 Unit V dBm ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHE1270-QAG8205 - 25 Jun 08 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-40GHz Detector Typical Measured Performance CHE1270-QAG Tamb = +25° Vdc = +4.5V, 27k Ω resistor in parallel on Vdet and Vref pads (see notes, C, page 7). - Return Loss measurement in the package access plans (refer to the “definition of the Sij reference planes” section below). Return Loss versus frequency 0 -2 -4 -6 -8 Return Loss (dB) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Freq (GHz) - Power measurements in the plan of the connectors, using the proposed land pattern & board 96272-B (see page 8). Transmitted power detection versus Input power 10000 12 GHz 32GHz Vdetect= Vref-Vdet (mV) 1000 17GHz 37GHz 22GHz 40GHz 27GHz 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Input power (dBm) Ref. : DSCHE1270-QAG8205 - 25 Jun 08 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270-QAG 12-40GHz Detector 40 35 30 25 20 15 10 5 0 12 14 Transmitted power detection versus frequency @ -15dBm Input power Vdetect= Vref-Vdet (mV) 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz) 2000 1900 1800 Vdetect= Vref-Vdet (mV) 1700 1600 1500 1400 1300 1200 1100 1000 12 Transmitted power detection versus frequency @ +15dBm Input power 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Freq (GHz) Ref. : DSCHE1270-QAG8205 - 25 Jun 08 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-40GHz Detector Package outline (1): CHE1270-QAG E1270 Matt Free Units tin, Lead (Green) mm JEDEC MO-220 (VEED) 12345678- Nc Gnd RF IN Gnd VDET DC VREF Nc 910111213141516- Gnd Nc Gnd Nc Nc Nc Nc Nc From the standard 17- GND (1) The package outline drawing included to this data-sheet is given for indication. Refere to the application note AN0017 available at http://www.ums-gaas.com for exact package dimensions. Ref. : DSCHE1270-QAG8205 - 25 Jun 08 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270-QAG Definition of the Sij reference planes 12-40GHz Detector The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 2.65mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended at the page 8. Recommanded package footprint Refere to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommandations. SMD mounting procedure The SMD leadless package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB (motherboard) are given in the drawings above. For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Ref. : DSCHE1270-QAG8205 - 25 Jun 08 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-40GHz Detector Notes CHE1270-QAG RF IN CHE1270 Matching 27kΩ Vdet Vdet DC 27kΩ Vref Recommended external resistors assembly 27kΩ resistors in parallel with Vdet and Vref pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref and Vdet, the external resistor value should be identical on these two ports. For information, a variation of 3% leads around 1mV variation of detected voltage. Due to ESD protection circuits on RF input, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF access. ESD protections are also implemented on Vdet and Vref accesses. The DC connection (on DC pad) does not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package. Ref. : DSCHE1270-QAG8205 - 25 Jun 08 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270-QAG Evaluation mother board: Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. 12-40GHz Detector Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board. Decoupling capacitors of 10nF ±10% are recommended for all DC accesses. (See application note AN0017 for details). (Not used) Capacitor Capacitor 10nF Resistor 27kΩ DC Ordering Information QFN 3x3 RoHS compliant package: CHE1270-QAG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHE1270-QAG8205 - 25 Jun 08 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Vdet Vref
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