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CHM1190

CHM1190

  • 厂商:

    UMS

  • 封装:

  • 描述:

    CHM1190 - K Band Mixer - United Monolithic Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
CHM1190 数据手册
CHM1190 K Band Mixer GaAs Monolithic Microwave IC Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. An electrically identical chip with a mirror drawing versus de LO side is available under the part number CHM1191. These two MMICs could be helpful in a TX, RX architecture module. It is available in chip form. LO IF RF -2 IF=2GHz Conversion gain (dB) -4 -6 -8 -10 -12 21 22 23 LO Frequency (GHz) 24 25 Main Features ■ 22-24 GHz LO frequency range ■ IF from 1 to 3 GHz ■ Low conversion loss up & down ■ High LO/RF isolation ■ Low LO input power ■ Small chip size: 1.73 x 1.53 x 0.10 mm Typical conversion characteristic (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol F_LO, F_IF Lc I_LO/RF Parameter LO frequency range IF frequency range Conversion loss @ P-LO = 7dBm LO/RF isolation Typ 22-24 1-3 7 30 Unit GHz GHz dB dBc ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. :DSCHM11909025 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHM1190 Electrical Characteristics Tamb. = 25°C Symbol F_LO F_IF Lc P_LO P-1dB VSWR_LO VSWR_RF VSWR_IF I_LO/RF K band Mixer Parameter LO frequency range IF frequency range Conversion loss @ P-LO = 7dBm (1) LO input power Input 1dB compression LO port VSWR (50Ω) (2) RF port VSWR (50Ω) (2) RF port VSWR (50Ω) (2) LO/RF isolation Min 22 1 Typ Max 24 3 Unit GHz GHz dB 7 5 7 7 2.5:1 2.5:1 2.5:1 30 9 dBm dBm dBc (1) On wafer measurements. (2) Depends on the wire bonding conditions and on the external matching network. Absolute Maximum Ratings (1) Tamb = +25°C Symbol P_LO P_RF P_IF Top Tstg Parameter Maximum peak input power overdrive at LO port (2) Maximum peak input power overdrive at RF port (2) Maximum peak input power overdrive at IF port (2) Operating temperature range Storage temperature range Values 10 10 10 -40 to +85 -55 to +125 Unit dBm dBm dBm °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s Ref. : DSCHM11909025 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K Band Mixer Typical test fixture measurements Tamb. = 25°C A) Down- converter -2 -2 CHM1190 IF=2GHz Conversion gain (dB) -4 -6 -8 -10 -12 21 22 23 LO Frequency (GHz) 24 25 Conversion gain (dB) -4 -6 -8 -10 -12 0 LO=23GHz 1 2 IF Frequency (GHz) 3 4 Conversion gain versus LO frequency LO Input power= 9dBm (1) Conversion gain versus IF frequency LO Input power= 9dBm (1) B) Up- converter -2 Conversion gain (dB) Conversion gain (dB) -4 -6 -8 -10 -12 21 22 23 LO Frequency (GHz) 24 25 -2 IF=2GHz -4 -6 -8 -10 -12 0 LO=23GHz 1 2 IF Frequency (GHz) 3 4 Conversion gain versus LO frequency LO Input power= 9dBm (1) Conversion gain versus IF frequency LO Input power= 9dBm (1) 2 Conversion gain (dB) 2 Conversion gain (dB) 0 -2 -4 -6 -8 -10 -12 0 IF=2GHz LO=23GHz 0 -2 -4 -6 -8 -10 -12 IF=2GHz LO=23GHz 1 2 3 4 5 6 7 8 9 10 RF Input power (dBm) -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 IF Input power (dBm) Input compression point versus RF power LO Input power= 9dBm (1) Input compression point versus IF power LO Input power= 9dBm (1) Ref. : DSCHM11909025 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHM1190 K band Mixer 0 Return loss (dB) Return loss (dB) -5 -10 -15 -20 -25 21 22 23 LO frequency (GHz) 24 25 0 -5 -10 -15 LO=23GHz -20 -25 22 23 24 RF frequency (GHz) 25 26 LO Return loss (1) LO input power = 9dBm RF Return loss (1) LO input power = 9dBm 0 Return loss (dB) -5 -10 -15 -20 -25 0 1 2 IF frequency (GHz) 3 4 OL=23GHz IF Return loss LO input power = 9dBm (1) This measurement is made with an external matching network. See application note for further information. Ref. : DSCHM11909025 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K Band Mixer Chip Mechanical Data (dimensions are in µm) CHM1190 70 1730 +/- 35 1020 96 300 180 1530+/-35 Chip size (including saw streets) : 1730 x 1530 ± 35µm Thickness: 100µm ± 10µm Pin LO RF IF LO input signal Description RF input or output signal IF input or output signal An electrically identical chip with a mirror drawing versus de LO side is available under the part number CHM1191. Ref. : DSCHM11909025 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHM1190 Application note 0.54 2.1 K band Mixer 0.35 1.1 εr ~ 2.2 h= 0.127 mm Example of integration using low dielectric constant substrate : Er=2.2, heigh=0.127mm (dimensions are in mm) In order to use acceptable wire bonding length, an external matching network is proposed for the LO input on low dielectric constant substrat. Ordering Information Chip form : CHM1190-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHM11909025 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM1190
1. 物料型号: - 型号:CHM1190 - 封装:99F/00

2. 器件简介: - CHM1190是一款平衡肖特基二极管混频器,基于六四分之一波长环形结构。它可以用于接收器或发射器部分。该电路采用BESMMIC工艺制造,包括1微米肖特基二极管器件、空气桥、基板通孔和步进光刻技术。

3. 引脚分配: - LO:本振输入信号 - RF:射频输入或输出信号 - IF:中频输入或输出信号

4. 参数特性: - 本振频率范围:22-24 GHz - 中频范围:1-3 GHz - 典型本振输入功率:5-9 dBm - 转换损耗:7 dB(在7 dBm本振功率下) - 本振/射频隔离:30 dBc

5. 功能详解: - CHM1190具有22-24 GHz的本振频率范围和1-3 GHz的中频范围,提供低转换损耗和高本振/射频隔离。它还具有低本振输入功率要求,有助于降低功耗。

6. 应用信息: - 该器件可用于K波段混频器,适用于需要低损耗和高隔离的应用场合。建议在低介电常数基板上使用外部匹配网络以获得可接受的线键长度。

7. 封装信息: - 芯片尺寸(包括锯路):1730 x 1530 ± 35微米 - 厚度:100微米 ± 10微米
CHM1190 价格&库存

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