CHM2179A

CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. LO RF IF -5 ■ W -band LO and RF frequency range ■ Low conversion loss ■ IF from DC to 100MHz ■ High LO/RF isolation ■ High LO/AM noise rejection ■ Very low IF noise ■ Low LO input power ■ Small chip size: 1.53 x 1.17 x 0.10 mm Conversion loss (dB) Main Features -7,5 -10 -12,5 -15 75 75,5 76 76,5 77 77,5 78 LO Frequency (GHz) Typical conversion characteristic LO power = 5dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol F_LO,F_RF F_IF Lc I_LO/RF N_IF Parameter LO,RF frequency range IF frequency range Conversion loss LO/RF isolation IF noise density @ 100kHz Typ 76-77 DC-100 7.5 20 -158 Unit GHz MHz dB dB dBm/Hz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCH21790192 - 22-Jun-00 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHM2179a Electrical Characteristics W-band Mixer Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical assembly and RF configuration” Symbol F_LO,F_RF F_IF Lc P_LO VSWR_LO VSWR_RF IF_load I_LO/RF R_AM_LO N_IF Id Parameter LO,RF frequency range IF frequency range Conversion loss LO input power LO port VSWR (50Ω) RF port VSWR (50Ω) IF load impedance LO/RF isolation LO AM noise rejection IF noise density @ 100kHz (1) Supply current (2) Min 76-77 DC-100 Typ Max Unit GHz MHz 7.5 3 5 2:1 2:1 200 17 22 27 -158 1 9 7 dB dBm Ω dB dB dBm/Hz mA (1) Measured on 50Ω IF load impedance. (2) See on chapter “Typical bias and IF configuration” Absolute Maximum Ratings (1) Tamb = +25°C Symbol Id P_LO P_RF Top Tstg Supply current Maximum peak input power overdrive at LO port (2) Maximum peak input power overdrive at RF port (2) Operating temperature range Storage temperature range Parameter Values 3 10 10 -40 to +100 -55 to +125 Unit mA dBm dBm °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s Ref. : DSCH21790192 - 22-Jun-00 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Mixer Chip Mechanical Data and Pin References CHM2179a 3 2 1 4 5 6 11 10 9 8 7 Unit = µm External chip size = 1530 x 1170 Chip thickness = 100 +/- 10 HF Pads (2,5) = 68 x 118 DC/IF Pads = 100 x 100 Pin number 1,3,4,6 2 5 7 8 9 10 11 LO RF GND IF C_ext +V Pin name Description Ground : should not be bonded. If required, please ask for more information. LO input RF input Ground (optional) Not Connected IF output Bias decoupling Positive supply voltage Ref. : DSCH21790192 - 22-Jun-00 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHM2179a Typical Bias and IF Configuration W-band Mixer Several external configurations are possible for bias and IF. The objective is to give flexibility for the integration. As this component is mainly dedicated to low IF use, there are several possibilities for interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200Ω, however depending on the IF amplifier noise characteristic this load can be modified in order to optimise the noise figure. A series capacitor, between IF output and the load is recommended. Due to high sensitivity to electrical discharges a integrated resistance is used and two ports are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the other one is for the supply voltage connection through an external series resistance (+V port). However, in order to keep the compatibility with the CHM2179, only the “C_ext” port can be used. +V C_bias R_bias1 +V 1k R_load_IF +V R_load_IF C_IF IF C_bias R_bias2 C_IF C_ext C_ext +V 1k IF LO RF LO RF Recommended external bias and IFconfiguration Other possible configuration (compatible with the previous version) The recommended values for external components are: C_bias R_bias1 R_bias2 R_load_IF R_bias*C >> 1/F_IF 2.9kΩ for 1mA current consumption (V = 4.5V, typical LO power) R_bias2 = R_bias1 + 1kΩ From 50 to 200Ω Notes:: 1. R_bias = R_bias1 + 1kΩ when “+V” port is used, otherwize R_bias = R_bias2 2. R_bias can be adjusted if necessary; This allows to optimise the performances when some parameters are different from recommended ones (Supply voltage, LO power …). However maximum ratings for the current have to be taken into account. 3. A series capacitor at IF outputs is recommended for DC decoupling. Ref. : DSCH21790192 - 22-Jun-00 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Mixer Typical Assembly and RF Configuration CHM2179a In order to use acceptable wire bonding length, compatible with automatic pick and place and wire bonding equipment, an external matching network is proposed on low dielectric constant substrate. 50 Ohm 390 200 Er ~ 2.2 h = 0.127mm 630 200 390 4 5 6 11 10 9 8 7 3 2 250 150 420 390 50 Ohm Example of integration using low dielectric constant substrate : Er=2.2, heigh=0.127mm (dimensions are in µm) Ref. : DSCH21790192 - 22-Jun-00 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 L ~ 0.25nH Er ~ 2.2 h = 0.127mm 390 860 120 100 1 100 120 L ~ 0.25nH 320 CHM2179a W-band Mixer Ordering Information Chip form : CHM2179a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCH21790192 - 22-Jun-00 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09