CHM2378A

CHM2378a RoHS COMPLIANT W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description The CHM2378a is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and very low 1/f noise. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. Conversion gain (dB) RF1 LO RF2 IF2 IF1 Dual channel mixer block diagram -5 -6 Main Features W-band LO and RF frequency range Low conversion loss IF from DC to 100MHz High LO/RF isolation High LO/AM noise rejection Very low 1/f noise Low LO input power Automatic assembly oriented Chip size: 1.98 x 2.07 x 0.10 mm -7 -8 -9 -10 -11 -12 -13 -14 -15 75 75,5 76 76,5 LO frequency (GHz) 77 77,5 78 Typical conversion characteristic LO power = 8dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25° C Symbol F_lo, F_rf F_if Lc I_lo/rf N_if Parameter LO,RF frequency IF frequency range Conversion loss LO/RF isolation IF noise @ 100kHz Min 76 DC-100 Typ 76.5 Max 77 Unit GHz MHz 7.5 25 -162 9.5 dB dB dBm/Hz ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHM2378a6354 - 20 Dec 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHM2378a Electrical Characteristics W-band Dual Channel Mixer Full operating temperature range, used according to section “Typical assembly and bias configuration” Symbol F_lo, F_rf F_if Lc Parameter LO,RF frequency IF frequency range Conversion loss Min 76 DC-100 4.5 7.5 9.5 0.3 (to be confirmed) Typ Max 77 Unit GHz MHz dB dB dBm dBm |(d(∆Lc)/dT)* ∆T| Conversion loss difference from chip to chip versus temperature P_lo P_RF_1dB VSWR_lo VSWR_rf IMP_if I_lo/rf I_rf1/rf2 I_rfi/rfj R_lo_am NF LO input power RF input power at 1 dB LO port VSWR (50Ω) RF port VSWR (50Ω) IF load impedance (1) LO/RF isolation Isolation between RF channels Isolation between RF and IF channels LO AM noise rejection (SSB) Noise figure for IF=1kHz (2) Noise figure for IF=10kHz (2) Noise figure for IF=100kHz (2) Noise figure for IF=200kHz (2) +V +I Top Positive supply voltage (3) Positive supply current (3) Operating temperature range -40 20 25 25 25 4 -3 7 0 2:1 2:1 200 25 30 30 30 34 28 20.5 17 4.5 1.5 11 2.5:1 2.5:1 Ω dB dB dB dB 39 33 25.5 22 dB dB dB dB V 2.5 +100 mA ° C (1) The IF optimum load for conversion loss is 200Ω. For minimum noise figure this load can be lower, the best results have been obtained on 50Ω. (2) Measured on 200Ω IF impedance. (3) An external resistor controls the bias current (see section “Typical Assembly and Bias Configuration”) Ref. DSCHM2378a6354 - 20 Dec 06 2/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 W-band Dual Channel Mixer Absolute Maximum Ratings (1) Symbol +V +I P_lo P_rf_cw Tstg Supply voltage Supply current (for one input) Maximum peak input power overdrive at LO port (2) Maximum input power at RF port (3) Storage temperature range Parameter CHM2378a Values 6 2.5 12 3 -55 to +125 Unit V mA dBm dBm ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s (3) Continuous wave mode. Ref. DSCHM2378a6354 - 20 Dec 06 3/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHM2378a W-band Dual Channel Mixer Chip Mechanical Data and Pin References 4 5 6 7 8 9 10 11 3 2 1 12 13 14 19 18 17 16 15 Unit = µm External chip size (including dicing streets) = 1980 x 2070 ± 35 Chip thickness = 100 +/- 10 HF Pads (2,10,13) = 68 x 118 DC/IF Pads = 100 x 100 Pin number 1,3,9,11,12,14 6,17 7,16 2 4 5 8 10 13 15 18 19 Pin name Description Ground: should not be bonded. If required, please ask for more information. Ground (optional) Not Connected LO input Positive supply voltage 1 Bias 1 decoupling First IF output First RF input Second RF input Second IF output Bias 2 decoupling Positive supply voltage 2 LO +V1 C1 IF1 RF1 RF2 IF2 C2 +V2 Ref. DSCHM2378a6354 - 20 Dec 06 4/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 W-band Dual Channel Mixer External components for bias and IF CHM2378a Several external configurations are possible for bias and IF. The objective is to give flexibility for the integration. As this component is mainly dedicated to low IF use, there are several possibilities for interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200Ω, however the best results on noise figure have been obtained on 50Ω. Depending on the IF amplifier noise characteristic this load can be modified in order to optimise the noise figure.. A series capacitor, between IF output and the load is recommended. Due to high sensitivity to electrical discharges an integrated resistance is used and two ports are available for biasing each mixer. One is for the connection of a decoupling capacitor (C1, C2) and the other one is for the supply voltage connection through an external series resistance (+V1, +V2). However, if necessary only the “C1, C2” ports can be used. +V R_load_IF C1 V1 1k IF1 C1 R_bias V1 1k C_IF IF1 RF1 LO RF2 1k RF1 LO RF2 1k C2 C2 V2 IF2 V2 R_bias IF2 C_IF Block diagram of the MMIC +V R_load_IF Recommended IF/DC external configuration The recommended values for external components are: C1,C2 R_bias_t R_bias_t*C >> 1/F_if 2.5kΩ for 1.5mA current consumption (V = 4.5V, typical LO power) From 50 to 200Ω R_load_if Notes:: 1. R_bias_t = R_bias + 1kΩ when V1 and V2 ports are used. 2. R_bias_t can be adjusted if necessary; this allows optimising the performances when some parameters are different from recommended (Supply voltage, LO power). However maximum ratings for the current have to be taken into account. 3. A series capacitor at IF outputs is recommended for DC decoupling. Ref. DSCHM2378a6354 - 20 Dec 06 5/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHM2378a Typical Assembly Configuration +V C1 R_bias 120pF IF1 W-band Dual Channel Mixer µ-strip line µ-strip line L_rf1 L_lo µ-strip line L_rf2 R_bias C2 +V 120pF IF2 This drawing shows an example of assembly configuration. The bias and IF interconnections are according to the example given in the previous chapter. For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to be according to the following recommendation. Port LO (2) RF1 (10) RF2 (13) Equivalent inductance (nH) L_lo= 0.26 L_rf1 = 0.26 L_rf2 = 0.26 Approximative wire length (mm) 0.33 0.33 0.33 For a micro-strip configuration a hole in the substrate is recommended for chip assembly. As the connections at 77GHz (between MMIC and MMIC or between MMIC and external substrate) are critical, the transition matching network is split into two parts: one on MMIC and one on the external substrate. This choice allows doing both kinds of connections. Ref. DSCHM2378a6354 - 20 Dec 06 6/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 W-band Dual Channel Mixer CHM2378a In the case of connection from MMIC to an external substrate a network is proposed on soft substrate for LO, RF1 and RF2 ports. The following drawings give the dimensions (in mm) for a DUROID substrate (thickness=0.127mm, r=2.2). 0.42 0.15 = Bonding area 0.94 Proposed matching network for a 50Ω transition between LO and a µ-strip line on DUROID substrate 0.2 0.73 = Bonding area Proposed matching network for a 50Ω transition between RF1/RF2 and µstrip lines on DUROID substrate. Ref. DSCHM2378a6354 - 20 Dec 06 7/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 0.325 0.2 0.25 CHM2378a W-band Dual Channel Mixer Ordering Information Chip form: CHM2378a99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHM2378a6354 - 20 Dec 06 8/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09