CHR2291

CHR2291 RoHS COMPLIANT 12-17GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2291 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. LO Q GM GB VDM VDL GX VGA RF I Main Features • • • • • • • 14 Typical on wafer measurement: Conversion Gain & Image suppression @ IF=1& 1.5GHz 12 10 8 6 4 2 Broadband performances : 12-17GHz 10 dB conversion gain 3.5dB noise figure (dB) 2LO Frequency 10dBm LO input power -8dBm RF input power (1dB gain comp.) Low DC power consumption, 130mA@3.5V Chip size : 2.49 X 2.13 X 0.10 mm 0 -2 -4 -6 -8 -10 -12 -14 -16 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 RF Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF FLO FIF Gc RF frequency range LO frequency range IF frequency range Conversion gain 12 5.25 0.25 +10 17 7.75 1.5 GHz GHz GHz dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHR22914232 - 19 Aug 04 1/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-17GHz Integrated Down Converter Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol FRF FLO FIF Gc NF PLO Img Sup P1dB CHR2291 Parameter RF frequency range LO frequency range IF frequency range Conversion gain (1) Noise Figure (1) LO Input power Image Suppression Input power at 1dB gain compression Min 12 5.25 0.25 Typ Max 17 7.75 1.5 Unit GHz GHz GHz dB dB dBm dBc dBm +10 3.5 +10 15 -8 2.0:1 2.0:1 100 LO VSWR Input LO VSWR (1) RF VSWR Input RF VSWR (1) Id Bias current (2) mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances for Idm= 50mA and Idl= 50mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Vd Id Vg Vdg Pin Tch Ta Tstg Parameter Maximum drain bias voltage Maximum drain bias current Gate bias voltage Maximum drain to gate voltage ( Vd– Vg) Maximum peak input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 4.0 180 -2.0 to +0.4 +5 +15 175 -40 to +85 -55 to +125 Unit V mA V V dBm °C °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : : DSCHR22914232 - 19 Aug 04 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-17GHz Integrated Down Converter Typical On-wafer Measurements CHR2291 Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V 14 12 10 8 6 4 2 2LO Frequency (dB) 0 -2 -4 -6 -8 -10 -12 -14 -16 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 RF Frequency (GHz) Conversion gain & Image suppression with a 90° IQ combiner @ IF=1 & 1.5GHz 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Freq. RF= 15GHz Freq LO= 7GHz Conversion Gain_I (dB) IF_power_I (dBm) Conversion Gain_Q (dB) IF_power_Q (dBm) Input RF power (dBm) Input RF compression by channel Ref. : : DSCHR22914232 - 19 Aug 04 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-17GHz Integrated Down Converter Typical On-board Measurements CHR2291 Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.7V, Vgb= -0.4V, Vgx= -0.6V, Vga= -0.4V 32 LO= RF + IF 28 Rejection 24 (dB & dBc) 20 16 12 8 4 RF=12.75GHz 0 -2 -1,5 -1 -0,5 0 0,5 1 1,5 2 IF Frequency (GHz) Conversion Gain & Image Rejection with a 90° IQ combiner Gain RF=14.05GHz RF=15.35GHz Ref. : : DSCHR22914232 - 19 Aug 04 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-17GHz Integrated Down Converter Chip Assembly and Mechanical Data CHR2291 LO IN To Vgm DC Gate Supply To Vgb DC Gate Supply Q OUT To Vdm,Vdl DC Drain Supply I OUT To Vgx DC Gate Supply To Vga DC Gate Supply RF IN Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : : DSCHR22914232 - 19 Aug 04 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-17GHz Integrated down converter CHR2291 Ordering Information Chip form : CHR2291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR22914232 - 19 Aug 04 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09