CHR2292

CHR2292 RoHS COMPLIANT 17-20GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2292 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. LO Q GM GB VDM VDL GX VGA RF 20 I Main Features • • • • • • • Conversion Gain & Image suppression (dB) Broadband performances : 17-20GHz 13dB conversion gain 4.0dB noise figure 10dBm LO input power -10dBm RF input power (1dB gain comp.) Low DC power consumption, 110mA@3.5V Chip size : 2.49 X 2.13 X 0.10 mm 16 12 8 4 0 -4 -8 -12 -16 -20 12 14 16 18 20 22 24 Gc_channel_inf_rfGc_channel_inf_rf+ Gc_channel_sup_rfGc_channel_sup_rf+ 2*LO Frequency (GHz) Conversion Gain for F_IF=1GHz (on wafer meas.) P_LO=+10dBm / P_RF= -20dBm Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF FLO FIF Gc RF frequency range LO frequency range IF frequency range Conversion gain 17 7.5 0.25 13 20 10 1.5 GHz GHz GHz dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. DSCHR22924232 - 19 Aug 04 1/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-20GHz Mfc Down Converter Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol FRF FLO FIF PLO Gc NF Img Sup P1dB CHR2292 Parameter RF frequency range LO frequency range IF frequency range LO Input power Conversion gain (1) Noise Figure (1) Image Suppression (1) RF Input power at 1dB gain compression (1) Min 17 7.5 0.25 Typ Max 20 10 1.5 Unit GHz GHz GHz dBm dB dB dBc dBm +10 13 4.0 15 -10 1.5:1 2.5:1 110 LO VSWR Input LO VSWR (1) RF VSWR Input RF VSWR (1) Id Bias current (2) mA (1) On Wafer measurements without bonding wires at the RF ports. (2) Current source biasing network is recommended. Optimum performances for Idm=50mA and Idl=60mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Vd Id Vg Pin Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Parameter Values 4.0 200 -2.0 to +0.4 +15 -40 to +85 -55 to +155 Unit V mA V dBm °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. DSCHR22924232 - 19 Aug 04 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-20GHz Mfc Down Converter Typical On-wafer Measurements CHR2292 Bias Conditions :Vdm= Vdl= 3.5 V, Vgm= -0.9V, Vgb= 0.4V, Vgx= -0.7V, Vga= -0.35V 20 Conversion Gain & Image suppression (dB) 16 12 8 4 0 -4 -8 -12 -16 -20 12 14 16 18 20 22 24 Gc_channel_inf_rfGc_channel_inf_rf+ Gc_channel_sup_rfGc_channel_sup_rf+ 2*LO Frequency (GHz) Conversion Gain & Image Suppresion @ IF=1GHz 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 17 17.5 18 18.5 19 19.5 20 RF Frequency (GHz) Noise figure (dB) by channel Ref. DSCHR22924232 - 19 Aug 04 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-20GHz Mfc Down Converter 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -20 -18 -16 -14 -12 -10 -8 IF power_I (dBm) IF power_Q (dBm) CHR2292 Freq_RF= 18.3GHz Freq_OL= 9.65GHz Conv_gain I (dB) Conv_gain Q (dB) -6 -4 Input RF power (dBm) Input RF compression by channel Ref. DSCHR22924232 - 19 Aug 04 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-20GHz Mfc Down Converter Chip Assembly and Mechanical Data CHR2292 LO IN To Vgm DC Gate Supply To Vgb DC Gate Supply Q OUT To Vdm,Vdl DC Drain Supply I OUT To Vgx DC Gate Supply To Vga DC Gate Supply RF IN Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. DSCHR22924232 - 19 Aug 04 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHR2292 Ordering Information Chip form : CHR2292-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHR22924232 - 19 Aug 04 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09