CHV2270

CHV2270 Fully Integrated Ku-band HBT VCO Low cost / High linearity GaAs Monolithic Microwave IC Description The CHV2270 is a multifunction for frequency generation. It integrates a C-band balanced voltage controlled oscillator providing a Kuband output (2nd harmonic), with different modulation slopes control and other functions like linearity improvement device making it suitable for radar modulations. It also includes a dual rank prescaler, an adjustable medium power amplifier and a temperature sensor. The VCO is fully integrated on HBT process. On chip base-collector diodes are used as varactors. All the active devices are internally self biased to ease bias configuration. This chip is compatible with automatic equipment for assembly. The circuit is manufactured on HBT process 2µm emitter length, via holes through the substrate and high Q passive elements. It is available in chip form. Vmt Vft Vct SETN GLIN +V SETHP 6.375GHz 6.375GHz RF_OUT x2 12.75GHz ÷N VCO HBT PresN_OUT Vtemp VCO multifunction block diagram Main Features -40° to +125° temperature range C C Low temperature dependence Fully integrated VCO architecture Prescaler by up to F_out/128 Low phase noise Low cost / high linearity oriented Adjustable output power Temperature sensor Very simple bias configuration Low DC power consumption Automatic assembly oriented SiNx layer protection Chip size: 1.38 x 2.05 x 0.1mm Typical VCO F_out(Vct) tuning (GHz) 12,8 12,75 F_out (GHz) 12,7 12,65 12,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 Typical free running VCO F_out(Vmt) tuning Main Characteristics Tamb = +25° C Symbol F_out PN Pout Parameter Specified output frequency range Phase noise @ F_out and 100kHz offset Output power Min 12.65 Typ 12.75 -100 5 or 14 Max 12.85 Unit GHz dBc/Hz dBm Ref.: DSCHV22707117 -27 Apr 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHV2270 Electrical Characteristics Full temperature range Ku-band HBT VCO Symbol Parameter (1) Min Typ 12.75 5 (2) 1.5:1 0.75 250 2 Max 12.85 8 2.5:1 Unit GHz dBm RF_OUT frequency for guaranteed F_out 12.65 specifications Output power at RF_OUT port on load P_out 1 VSWR ≤ 1.5:1 (2) VSWR_out RF_OUT port VSWR on 50Ω load P_out linearity over 200MHz within P_out_Lin F_out range Maximum variation of F_out over ∆F_tune(T) temperature Vct_F_tune Coarse tuning total frequency range 0.5 Fine tuning frequency range with Vft_F_tune 3 guaranteed specifications Medium tuning frequency range with Vmt_F_tune guaranteed specifications Vct_V_tune Coarse tuning voltage range 0.5 - 4.3 Vft_V_tune Fine tuning voltage range 2-4 Vmt_V_tune Medium tuning voltage range Vct_I Coarse tuning port current Vft_I Fine tuning port current Vmt_I Medium tuning port current Vct_F_slope Coarse tuning frequency slope 200 Fine tuning frequency slope within Vft_F_slope -10 Vft_F_tune (3) Maximum variation of Vft_F_slope over 0 ∆Vft_F_slope(T) Top range [+30° C;+110° (3) C] Medium tuning frequency slope within Vmt_F_slope -40 Vmt_F_tune Maximum variation of Vmt_F_slope 0 ∆Vmt_F_slope(T) over Top range [+30° C;+110° (4) C] Fine tuning linearity over 200kHz within Vft_Lin -5 Vft_F_tune (3) Medium tuning linearity over 33MHz Vmt_Lin1 within Vmt_F_tune (3) Medium tuning frequency range with Vmt_Lin2 +/-1% linearity within Vmt_F_tune Fine tuning modulation 3dB cutoff frequency within Vft_F_tune Vft_Mod3dB 5 @ d(Vct_V)/dt=0 Medium tuning modulation 3dB cutoff frequency within Vmt_F_tune Vmt_Mod3dB 10 @ d(Vct_V)/dt=0 Frequency pulling versus RF_OUT port P_VSWR load @ VSWR = 2.5:1 (2) Frequency pushing versus supply P_V+ 0 voltage F_out Phase noise @ 10kHz PN @ 100kHz @ 1MHz Amplitude noise (SSB) @ 10kHz AN @ 100kHz @ 1MHz Ref.: DSCHV22707117 -27 Apr 07 2/8 dBpp 500 MHz GHz MHz 70 0.5 – 4.5 0 – 4.5 0 – 4.5 0.5 0.5 3 700 -2.5 +/-10 -20 -10 -20 = 47pF Ku-band HBT VCO GND >= 47pF DC line +V >= 47pF >= 47pF L_out L_out µ-strip line This drawing shows an example of assembly and bias configuration. All the transistors are internally self-biased. Some external chip capacitors of at least 47pF are necessary for the positive supply voltage. Pads to be power supplied are (VD1 xor VD2) and (VA1 xor VA2). Prescaler outputs PRES4 and PRES64 must be AC coupled through an external serial capacitor taking into account output frequency and internal impedance of 100Ω (Typically >120pF). SET4 and SET64 longer bonding length to DC ground than 10mm must be compensated by intermediate decoupling capacitor (Typically >120pF). Setting is done by DC load only. For the RF pad the equivalent wire bonding inductance (diameter=25µm) have to be according to the following recommendation: Pin name RF Equivalent inductance L_out < 0.3 nH Wire length (1) < 0.4 mm (1) This value is the total length including the necessary loop from pad to pad. Chip backside must be RF grounded. Ref.: DSCHV22707117 -27 Apr 07 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Ku-band HBT VCO CHV2270 Ref. : DSCHV22707117 -27 Apr 07 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHV2270 Ku-band HBT VCO Ordering Information Chip form : CHV2270-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorized for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref.: DSCHV22707117 -27 Apr 07 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09