CND2047

CND2047 10GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50Ω load. The CND2047 is available in chip form and in 2 packages form: * low cost SOIC8 plastic package * 8 lead Flat Pack ceramic surface mount package 2047 FTP8 ceramic package Main Features ¦ Very broad operating frequency range ¦ Low power dissipation: 300mW ¦ Single supply operation: 3V to 5V ¦ High input sensitivity: -10dBm@8 Ghz at 25°C and -5dBm@8Ghz at 125°C ¦ Low phase noise: -139dBc/Hz at 1KHz SOIC8 plastic package Main Characteristics Tamb= +25°C Symbol Vdd Pdiss Fmax Drain voltage Power dissipation Maximum input frequency FTP8 SOIC8 Parameter Min 3 120 9 8 Typ 5 300 10 9 Max 6 400 Unit V mW GHz ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCND20470077 -17-Mar-00 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CND2047 10GHz Frequency Divider by 4 Electrical Characteristics in FTP8 Ceramic Package and in die form Guaranteed electrical specifications over the temperature range of -55°C to +125°C but tested at Tamb=25°C under configuration described in Fig.1 ( Vdd=5V ; Differential inputs; Pin=0dBm ; Zo=50 Ω ) Symbol Fmax Idd Parameter Maximum input frequency Supply current Min 8.25 Typ 8.75 60 75 Max Unit GHz mA Typical design information over the temperature range of -55°C to +125°C ( Vdd=5V, Zo=50 Ω ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 8 8.25 7.5 8 -4 8.5 8.75 8 8.5 -1.5 60 75 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit Typical design information over the temperature range of -55°C to +125°C. ( Vdd=3.3V, Zo=50 Ω ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 7.5 8 7 7.5 -7 8 8.5 7.5 8 -4.5 40 55 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit Ref. : DSCND20470077 -17-Mar-00 2/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10GHz Frequency Divider by 4 Electrical Characteristics in SOIC8 package CND2047 Guaranteed electrical specifications over the temperature range of -40°C to +85°C but tested at Tamb=25°C under configuration described in Fig.1 ( Vdd=5V ; Differential inputs; Pin=0dBm ; Zo=50 Ω ) Symbol Fmax Idd Parameter Maximum input frequency Supply current Min 8.5 Typ 9 60 75 Max Unit GHz mA Typical design information over the temperature range of -40°C to +85°C ( Vdd=5V, Zo=50 Ω ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 8 8.5 7.25 7.75 -4 8.5 9 7.75 8.25 -1.5 60 75 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit Typical design information over the temperature range of -40°C to +85°C. ( Vdd=3.3V, Zo=50 Ω ) Symbol Fmax Parameter Maximum input frequency differential input Pin= -5dBm Pin= 0dBm one input Pin= -5dBm Pin= 0dBm Pout Idd Output power Supply current 7 7.5 6.5 6.75 -7 7.5 8 7 7.25 -4.5 40 55 GHz Ghz Ghz Ghz dBm mA Min Typ Max Unit Ref. : DSCND20470077 -17-Mar-00 3/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CND2047 Absolute Maximum Ratings (1) Tamb= 25°C Symbol Vdd Pin Top Drain voltage Maximum input power Operating temperature range Parameter 10GHz Frequency Divider by 4 Values 7 15 SOIC8 -40 to +85 -55 to +125 -65 to +175 Units V dBm °C Die form / FTP8 Tstg Storage temperature range °C (1) Operation of this device above anyone of these parameters may cause permanent damage Ref. : DSCND20470077 -17-Mar-00 4/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10GHz Frequency Divider by 4 Typical Characteristics Tamb= 25°C, Zo=50Ω, Vdd=5V Output power level vs Input frequency and Vdd 2 0 Output level (dBm) -2 CND2047 Vdd=5V -4 -6 -8 -10 1 3 5 7 Frequency (GHz) 9 11 Vdd=3.3V Device current vs Voltage and Temperature 80 70 60 Idd (mA) 50 40 30 20 10 0 2,5 3 3,5 4 4,5 Vdd (V) 5 5,5 6 25°C -55°C 125°C SSB phase noise vs. Offset frequency (Fin=3.9 Ghz) 0 SSB phase noise (dBc/Hz) -20 -40 -60 -80 -100 -120 -140 -160 10 100 1000 Offset frequency (Hz) 10000 100000 Ref. : DSCND20470077 -17-Mar-00 5/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CND2047 10GHz Frequency Divider by 4 Fmax vs Vdd (Pin=0dBm; differential inputs) 12 10 Frequency (GHz) 8 6 4 2 0 2 2,5 3 3,5 4 Vdd (Volts) 4,5 5 5,5 6 SOIC8 FTP8 FTP8 package / Die form Input sensitivity vs. Input frequency and temperature (Vdd=5V; differential inputs) 15 5 Input level (dBm) -5 +25°C -15 +125°C -25 -55°C -35 -45 -55 1,00 3,00 5,00 7,00 9,00 11,00 Frequency (GHz) SOIC8 package Input sensitivity vs. Input frequency and temperature (Vdd=5V; differential inputs) 15,00 5,00 Input level (dBm) -5,00 -15,00 -25,00 -35,00 -45,00 -55,00 1,00 +80 +25 -40 3,00 5,00 7,00 9,00 11,00 Frequency (GHz) Ref. : DSCND20470077 -17-Mar-00 6/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10GHz Frequency Divider by 4 Typical bias tuning Tamb=25°C Vdd CND2047 1 1 nF Signal generator 50 Ohms load Tansmission lines are 50 Ohms 0° 1 nF 8 1 nF Spectrum analyzer 50 Ohms load 1 nF 180° 4 Fig.1 : Typical measurement and RF biasing configuration (differential inputs) Vdd 1 Signal generator 50 Ohms load Tansmission lines are 50 Ohms 1 nF 8 5 1 nF Q F/4 RF output (50 Ohms) QB F/4 RF output (50 Ohms) 1 nF Fig.2 : RF biasing configuration with single input Fig.3 : Chip block diagram Ref. : DSCND20470077 -17-Mar-00 7/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 4 5 CND2047 SOIC8 Mechanical Data 5+/-0.15 [20+/-0.006] 3.81 [.15] 1.27 [0.05] 10GHz Frequency Divider by 4 0.2 [0.006] 8 5 6+/-0,15 (,236+/-,006) 0.1+/-0.15 3,7 (1,45) [.004+/-.006] 1.4 [0.055] 1 0.4 [.015] 4 8° max unité: mm Unit: [In] Tolérance générale: +/-0.05 [general tolerance: +/-.002] 1.7 max Pin out 1 2 3 4 5 6 7 8 Signal Vdd CK CKB Ground Ground QB Q Vdd Ref. : DSCND20470077 -17-Mar-00 8/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10GHz Frequency Divider by 4 FTP8 Mechanical Data 3,81 1,27 typ. CND2047 8 5 0,127 max 9,56 - 10,16 4,6 max 2047 Da e code t 1 4 1,00 - 1,77 2,00 m x a 0,127 ±0,02 0,38 4,6 ma x Unite : mm Pin out 1 2 3 4 5 6 7 8 Signal Vdd CK CKB Ground Ground QB Q Vdd Ref. : DSCND20470077 -17-Mar-00 9/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CND2047 Chip Mechanical Data 10GHz Frequency Divider by 4 Vdd CKB CK Vdd Recommended die attach Epoxy die attach is recommended. Minimum quantity of electrically conductive epoxy must be used, with a narrow fillet around the die after contact Recommended bonding Bonding pads of the product are covered with aluminium metallic layer. Wedge or ball bonding can be used. Aluminium wire has be used if the assembly process is up to 250°C. Otherwise the use of gold wire is possible. The ground bounding length should be as short as possible to optimize the use of the product. The bonder should be properly grounded. Note 1: Vdd1 is used to connect the output buffers (on Q/QB) and can be applied separately from Vdd. GND GND GND QB UMS 7151 Q Vdd1 dimensions in µm : 1050 (+10 /-100) * 900 (+10 /-100) Thickness= 300µm ± 20µm Pads area: 100*100µm Ordering Information Chip form FTP8 Package SOIC8 Package :CND2047-99F/00 :CND2047-SNF/23 :CND2047-DAF/20 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCND20470077 -17-Mar-00 10/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09