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S3AB

S3AB

  • 厂商:

    UNIOHM(厚声)

  • 封装:

  • 描述:

    S3AB - 3.0 AMP SURFACE MOUNT SILICON RECTIFIERS - UNIOHM CORPORATION

  • 详情介绍
  • 数据手册
  • 价格&库存
S3AB 数据手册
S3AB THRU S3MB 3.0 AMP SURFACE MOUNT SILICON RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop .083(2.11) .075(1.91) 3.0 Ampere DO-214AA(SMB) .155(3.94) .130(3.30) MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.093 grams .096(2.44) .083(2.13) .050(1.27) .030(0.76) .185(4.70) .160(4.06) .012(0.31) .006(0.15) .008 MAX. (.203) .220(5.59) .200(5.08) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current At TL=75 C Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 3.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Ta=125 C Typical Junction Capacitance (Note1) Typical Thermal Resistance RqJL (Note 2) Operating and Storage Temperature Range TJ, TSTG NOTES: S3AB 50 35 50 S3BB 100 70 100 S3DB 200 140 200 S3GB 400 280 400 3.0 100 1.20 5.0 250 60 13 -65 +150 S3JB 600 420 600 S3KB 800 560 800 S3MB UNITS 1000 700 1000 V V V A A V mA mA pF C/W C 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. Thermal Resistance Junction to Lead. RATING AND CHARACTERISTIC CURVES (S3AB THRU S3MB) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Tj=25 C Pulse Width 300us 1% Duty Cycle Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 50 INSTANTANEOUS FORWARD CURRENT,(A) 10 3.0 1.0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 100 .01 .6 .7 .8 .9 1.0 1.1 1.2 1.3 FORWARD VOLT AGE,(V) 80 60 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 40 20 FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 10 REVERSE LEAKAGE CURRENT, (mA) 140 Tj=100 C FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 120 100 80 60 40 20 0 1.0 .1 Tj=25 C .01 0 .01 .05 .1 .5 1 5 10 50 100 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLT AGE,(%)
S3AB
物料型号:S3AB、S3BB、S3DB、S3GB、S3JB、S3KB、S3MB,这些是3.0安培表面安装硅整流器的型号。

器件简介:这些器件是3.0安培的表面安装硅整流器,适用于50到1000伏的电压范围。它们具有低正向电压降、为表面安装应用设计、易于拾取和放置、内置缓解应力、金属与塑料的冶金结合构造等特点。

引脚分配:极性由色带表示阴极端。

参数特性: - 最大重复峰值反向电压:50伏至1000伏不等。 - 最大RMS电压:35伏至700伏不等。 - 最大直流阻断电压:50伏至1000伏不等。 - 最大平均正向整流电流:在TL=75°C时为3.0A。 - 峰值正向浪涌电流:在JEDEC方法下,额定负载上叠加的8.3 ms单半正弦波为100A。 - 最大瞬时正向电压在3.0A时为1.20V。 - 最大直流反向电流:在Ta=25°C时为5.0A,在Ta=125°C时为250uA。 - 典型结电容:60pF(注1)。 - 典型热阻RJL(注2):13°C/W。 - 工作和储存温度范围:-65至+150°C。

功能详解:这些器件用于整流应用,将交流电转换为直流电。它们适用于电阻性或感性负载,对于电容性负载,需要将电流降低20%。

应用信息:适用于需要3.0安培电流处理能力的表面安装应用。

封装信息:封装类型为DO-214AA(SMB),材料为模塑料,环氧树脂:UL 94V-0级阻燃。

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