UNISONIC TECHNOLOGIES CO., LTD 10N80
800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
Power MOSFET
FEATURES
* RDS(ON) = 1.1Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1-T Package TO-3P TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
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10N80
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°С) ID 10 A Pulsed Drain Current (Note 2) IDM 40 A Avalanche Current (Note 2) IAR 10 A Single Pulsed (Note 3) EAS 920 mJ Avalanche Energy 24 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 Power Dissipation W TO-220F1 36 PD TO-3P 1.92 °С/W Linear Derating Factor above TC = 25°С TO-220F1 0.288 Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=17.3mH, IAS=10A, VDD=50V, RG=25Ω, Satarting TJ=25°C 4. ISD ≤ 10 A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C.
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case TO-3P TO-220F1 TO-3P TO-220F1 SYMBOL θJA θJC RATINGS 40 62.5 0.52 3.47 UNIT °С/W °С/W
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge SYMBOL BVDSS IDSS IGSS ΔBVDSS/ΔTJ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS =0 V, ID =250 µA VDS =800V, VGS =0 V VDS =640V, TC =125°C VDS =0 V, VGS = ±30 V ID =250 µA, Referenced to 25°C VDS =VGS, ID =250 µA VGS = 10 V, ID = 5.0 A 3.0 0.93 MIN 800 10 100 ±100 0.98 5.0 1.1 TYP MAX UNIT V µA nA mV/°С V Ω pF pF pF
VDS =25V, VGS =0V, f=1MHz
2150 2800 180 230 15 20 50 130 90 80 45 13.5 17 110 270 190 170 58
VDD=400V, ID=10.0A, RG=25Ω(Note 1,2) VDS =640V, VGS =10V, ID =10.0A (Note 1,2)
ns
nC
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10N80
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=10.0 A,VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, dIF /dt = 100 A/µs, Reverse Recovery Time tRR IS = 10.0 A (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. Independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT 1.4 10.0 A 40.0 730 10.9 ns nC V
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10N80
TEST CIRCUIT
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD
ID(t)
VDS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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10N80
TEST CIRCUIT(Cont.)
D.U.T. + VDS + L
Power MOSFET
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
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10N80
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage 10 8 6 5 4 3
Power MOSFET
Drain-Source On-State Resistance Characteristics VGS=10V, ID=5A
4 2 0 0
2 1 0 200 800 Source to Drain Voltage,VSD (mV) 400 600 1000 0
1
2
3
4
5
Drain to Source Voltage, VDS (V) Drain Current vs. Drain-Source Breakdown Voltage 400 350 300 250 200 150 100 50
Drain Current vs. Gate Threshold Voltage 3 2.5 2 1.5 1 0.5 0
0
1 2 3 Gate Threshold Voltage,VTH (V)
4
0
0
200 400 600 800 1000 Drain-Source Breakdown Voltage,BVDSS(V)
U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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