11N50L-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. 1 TO-220F1 FEATURES * Low Gate Charge: 43nC (TYP.) * 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V * Fast Switching * Low CRSS: 25pF (TYP.) * With 100% Avalanche Tested * Improved dv/dt Capability * Fast Recovery Body Diode: 90ns (TYP.) SYMBOL D G S ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N50L- TF1-T 11N50G-TF1-T Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-462.a 11N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS ±30 V TC=25°C ID 11 (Note 1) A Continuous Drain Current ID 7 (Note 1) A TC=100°C Pulsed Drain Current (Note 2) IDM 44 (Note 1) A Single Pulsed Avalanche Energy(Note 3) EAS 670 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC=25°C 48 W Total Power Dissipation PD Derate above 25°C 0.39 W/°C Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Drain current limited by maximum junction temperature 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=10mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4.ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC SYMBOL BVDSS RATINGS 62.5 2.58 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current TEST CONDITIONS VGS=0V, ID=250µA MIN 500 0.5 10 100 ±100 2.0 0.48 15 4.0 0.55 TYP MAX UNIT V V/°C µA µA nA V Ω S pF pF pF nC nC nC ns ns ns ns ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C IDSS VDS=500V, VGS=0V VDS=500V, TJ=125°C VDS=0V ,VGS=±30V Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A Forward Transconductance gFS VDS=40V, ID=5.5A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=400V, VGS=10V, ID=11A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=250V, ID=11A, RG=3Ω Turn-ON Rise Time tR (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 1515 2055 185 235 25 30 43 8 19 24 70 120 75 55 57 150 250 160 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-462.a 11N50 Preliminary Power MOSFET MIN TYP MAX UNIT 11 44 1.4 90 1.5 A A V ns μC ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =11A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=11A, dIF/dt=100A/μs4 Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-462.a 11N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-462.a 11N50 Gate Charge Test Circuit Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-462.a 11N50 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-462.a