12NN10

UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. SOP-8 FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150mΩ @ VGS=10V * Fast Switching Speed * Simple Drive Requirement SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 1 12NN10L-S08-R 12NN10G-S08-R SOP-8 S1 Note: Pin Assignment: G: Gate D: Drain S: Source 2 G1 Pin Assignment 3 4 5 6 S2 G2 D2 D2 7 D1 8 D1 Packing Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-506.a 12NN10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous(Note 3) ID 2.5 A Drain Current 10 A Pulsed(Note 2) IDM Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Absolute maximum ratings are those values beyond which the device could be permanently damaged. Note: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by Max. junction temperature. 3. Surface mounted on 1 in2 copper pad of FR4 board, t