12P10-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Preliminary Power MOSFET 100V P-CHANNEL MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) = 0.29Ω @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: 12P10L Halogen-free: 12P10G 1.Gate 3.Source ORDERING INFORMATION Normal 12P10-TN3-R 12P10-TN3-T Ordering Number Lead Free 12P10L-TN3-R 12P10L-TN3-T Halogen Free 12P10G-TN3-R 12P10G-TN3-T Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-262.a 12P10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID -9.4 A Pulsed Drain Current (Note 2) IDM -37.6 A Avalanche Current (Note 2) IAR -9.4 A Single Pulsed Avalanche Energy (Note 3) EAS 370 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -6.0 V/ns Power Dissipation Ta= 25°C 50 W PD 0.4 W/°C Derate above 25°C ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C 4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP MAX 110 2.5 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time SYMBOL BVDSS ΔBVDSS/ΔTJ IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF TEST CONDITIONS VGS=0 V, ID=-250µA ID=-250µA, Referenced to 25°C VDS=-100V, VGS=0V VDS=0V, VGS=±30V VDS=VGS, ID=-250µA VGS=-10V, ID=-4.7A VDS =-40V, ID=-4.7A (Note 1) MIN -100 -0.1 -1 ±100 -2.0 0.24 6.3 620 220 65 21 4.6 11.5 15 160 35 60 -4.0 0.29 TYP MAX UNIT V V/°C µA nA V Ω S pF pF pF nC nC nC ns ns ns ns VDS=-25V, VGS=0V, f=1.0MHz 800 290 85 27 VDS=-80V, ID=-11.5A, VGS=-10V(Note 1, 2) VDD=-50V, ID=-11.5A, RG=25Ω(Note 1, 2) 40 330 80 130 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-262.a 12P10 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=-9.4A Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR VGS=0V, IS=-11.5A, dIF/dt=100A/s(Note 4) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature MIN TYP MAX UNIT -4.0 -9.4 -37.6 110 0.47 V A A ns nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-262.a 12P10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-262.a 12P10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-262.a UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 12P10 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-262.a 12P10 1200 Drain Current,ID (mA) 1000 800 600 400 200 0 0 Preliminary Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms VDS 90% 10% VGS td(off) tr 200 400 600 800 Source to Drain Voltage,VSD (mV) tf td(on) Drain Current,ID (µA) Drain-Source On-State Resistance Characteristics 12 10V 10 8 VGS=2.5V 6 4 2 0 4.5V 0 50 100 150 200 Drain to Source Voltage, VDS (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current,ID (µA) 7 of 6 QW-R502-262.a