12P10L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES * RDS(ON) < 0.29Ω @ VGS=-10V, ID=-4.7A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-262.M 12P10  Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12P10G-AA3-R 12P10L-TA3-T 12P10G-TA3-T 12P10L-TM3-T 12P10G-TM3-T 12P10L-TMS-T 12P10G-TMS-T 12P10L-TMS2-T 12P10G-TMS2-T 12P10L-TMS4-T 12P10G-TMS4-T 12P10L-TN3-R 12P10G-TN3-R 12P10L-TND-R 12P10G-TND-R 12P10L-TQ2-R 12P10G-TQ2-R 12P10L-TQ2-T 12P10G-TQ2-T 12P10G-S08-R Note: Pin Assignment: G: Gate D: Drain  Package SOT-223 TO-220 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-263 TO-263 SOP-8 S: Source 1 G G G G G G G G G G S 2 D D D D D D D D D D S Pin Assignment 3 4 5 6 7 S S S S S S S S S S S G D D D 8 D Packing Tape Reel Tube Tube Tube Tube Tube Tape Reel Tape Reel Tape Reel Tube Tape Reel MARKING PACKAGE MARKING SOT-223 TO-251S4 TO-252 TO-252D TO-263 TO-220 TO-251 TO-251S TO-251S2 SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-262.M 12P10  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID -9.4 A Pulsed Drain Current (Note 2) IDM -37.6 A Avalanche Current (Note 2) IAR -9.4 A Single Pulsed Avalanche Energy (Note 3) EAS 280 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ TO-220/TO-263 73 W TO-251/TO-251S TO-251S2/TO-251S4 50 W Power Dissipation PD TO-252/TO-252D SOT-223 8 W SOP-8 5 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C 4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C  THERMAL DATA PARAMETER TO-220/TO-263 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D Junction to Ambient TO-263 SOT-223 SOP-8 TO-220/TO-263 TO-251/TO-251S TO-251S2/TO-251S4 Junction to Case TO-252/TO-252D SOT-223 SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS 62.5 UNIT °С/W 110 °С/W 62.5 125 150 1.9 °С/W °С/W °С/W °С/W 2.5 °С/W 14 25 °С/W °С/W θJA θJC 3 of 6 QW-R502-262.M 12P10  Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS VGS=0 V, ID=-250µA VDS=-100V, VGS=0V VDS=-100V, TC=125°C VDS=0V, VGS=±30V -100 VGS(TH) RDS(ON) gFS VDS=VGS, ID=-250µA VGS=-10V, ID=-4.7A VDS =-40V, ID=-4.7A (Note 1) -2.0 CISS COSS CRSS VDS=-25V, VGS=0V, f=1.0MHz Drain-Source Leakage Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge IGSS QG VDS=-50V, ID=-1.3A, Gate Source Charge QGS VGS=-10V(Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=-30V, ID=-0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Diode Forward Voltage VSD VGS=0V, IS=-9.4A Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 -10 ±100 V µA µA nA -4.0 0.24 0.29 6.3 V Ω S 570 115 30 800 290 85 pF pF pF 21 4.6 4 40 64 255 70 27 nC 50 100 275 90 nC nC ns ns ns ns -9.4 A -37.6 A -4.0 V 4 of 6 QW-R502-262.M 12P10  Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM di/dt Body Diode Reverse Current VDS (D.U.T.) VDD Body Diode Recovery dv/dt Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-262.M 12P10  Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS tp VDD RG -10V D.U.T. tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw ID(t) VDD Time VDS(t) IAS BVDSS Unclamped Inductive Switching Waveforms 6 of 6 QW-R502-262.M 12P10  Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 6 QW-R502-262.M 12P10 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 6 QW-R502-262.M