15N10L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 15N10 Power MOSFET 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC 15N10 is suitable for high efficiency switching DC/DC converter, LCD display inverter and load switch.  FEATURES * RDS(ON)=0.08Ω @VGS=10V,ID=8A * Low gate charge (Typ=24nC) * Low CRSS (Typ=23pF) * High switching speed  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N10L-TM3-T 15N10G-TM3-T 15N10L-TN3-R 15N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source  Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-846.C 15N10  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V TC=25°C, TJ=150°C 14.7 A Continuous ID Drain Current TC=70°C, TJ=150°C 13.6 A 59 A Pulsed IDM TC=25°C 34.7 W PD Power Dissipation TC=70°C 22.2 W Operating Junction Temperature TJ -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL Junction to Case (Note) θJC Note: The device mounted on 1in2 FR4 board with 2 oz copper.  RATINGS 3.6 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V MIN TYP MAX UNIT 100 V 1 µA +100 nA -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 3.0 Drain-Source On-State Resistance (Note) RDS(ON) VGS=10V, ID=8A 80 100 DYNAMIC PARAMETERS Input Capacitance CISS 890 VGS=0V, VDS=15V, f=1MHz Output Capacitance COSS 58 Reverse Transfer Capacitance CRSS 23 SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=80V, ID=10A 24 Total Gate Charge QG 13 VGS=4.5V, VDS=80V, ID=10A Gate to Source Charge QGS 4.6 Gate to Drain Charge QGD 7.6 Gate-Resistance RG VDS=0V, VGS=0V, f=1MHz 0.9 Turn-ON Delay Time tD(ON) 14 VDS=50V, RL=5Ω, VGEN=10V, Rise Time tR 33 RG=1Ω Turn-OFF Delay Time tD(OFF) 39 Fall-Time tF 5 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V 0.9 1.2 Note: Pulse test: pulse width≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw V mΩ pF pF pF nC nC nC nC Ω ns ns ns ns V 2 of 5 QW-R502-846.C 15N10  Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 3 of 5 QW-R502-846.C 15N10  Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-846.C 15N10  Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 VDS=VGS 250 250 200 200 150 150 100 100 50 50 0 0 0 0 30 90 120 60 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 10 VGS=10V 8 Drain Current, ID (A) Drain Current, ID (A) 10 0.4 0.8 1.2 2.0 2.4 1.6 Gate Threshold Voltage, VTH (V) 6 4 2 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 Drain to Source Voltage, VDS (V) 0.6 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-846.C