15N65G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 15N65 15 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N65 is universally applied in active power factor correction and high efficient switched mode power supplies. Preliminary Power MOSFET FEATURES * 15A, 650V, RDS(ON)=0.44Ω @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N65L-TF1-T 15N65G-TF1-T 15N65L-T47-T 15N65G-T47-T Note: Pin Assignment: G: Gate D: Drain Package TO-220F1 TO-247 S: Source 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-481.a 15N65 PARAMETER Drain to Source Voltage Gate to Source Voltage Avalanche Current (Note 1) Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT 650 V ±30 V 15 A Continuous 15 A Continuous Drain Current 60 A Pulsed (Note 1) Single Pulsed (Note 2) 637 mJ Avalanche Energy Repetitive (Note 1) 25.0 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns TO-220F1 37 W Power Dissipation PD TO-247 312 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220F1 TO-247 TO-220F1 TO-247 SYMBOL θJA θJC RATINGS 62.5 40 3.3 0.4 UNIT °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-481.a 15N65 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS TEST CONDITIONS MIN 650 0.65 1 10 +100 -100 3.0 0.36 19.2 5.0 0.44 TYP MAX UNIT V V/°C µA µA nA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns μC VGS=0V, ID=250µA, TJ=25°C ID=250μA, Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Referenced to 25°C VDS=650V, VGS=0V Drain-Source Leakage Current IDSS VDS=520V, TC=125°C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A Forward Transconductance gFS VDS=40V, ID=7.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=520V, VGS=10V, Gate-Source Charge QGS ID=15A (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=325V, ID=15A, RG=21.7Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =15A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=15A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=5.23mH, IAS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Drain current limited by maximum junction temperature 2380 3095 295 385 23.6 35.5 48.5 14.0 21.2 65 125 105 65 63.0 140 260 220 140 15 60 1.4 496 5.69 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-481.a 15N65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-481.a 15N65 Preliminary Peak Diode Recovery dv/dt Test Circuit & Waveforms Power MOSFET DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-481.a UNISONIC TECHNOLOGIES CO., LTD 15N65 Gate Charge Test Circuit VGS QG Preliminary Power MOSFET Gate Charge Waveforms Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 6 of 6 QW-R502-481.a 15N65 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-481.a