UNISONIC TECHNOLOGIES CO., LTD
15NM70-U2
Power MOSFET
15A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 15NM70-U2 is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at AC-DC converters for power applications.
FEATURES
* RDS(ON) ≤ 0.45 Ω @ VGS=10V, ID=7.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15NM70L-TA3-T
15NM70G-TA3-T
15NM70L-TF3-T
15NM70G-TF3-T
15NM70L-TF1-T
15NM70G-TF1-T
15NM70L-TF34-T
15NM70G-TF34-T
15NM70L-TM3-T
15NM70G-TM3-T
15NM70L-TN3-R
15NM70G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2021 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F4
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R205-310.D
15NM70-U2
Power MOSFET
MARKING
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ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
Continuous
ID
15
A
Pulsed Drain Current
Pulsed (Note 2)
IDM
30
A
Avalanche Current (Note 3)
IAR
2.4
A
Avalanche energy
Single Pulsed (Note 3)
EAS
202.1
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.7
V/nS
TO-220
94
W
TO-220F/TO-220F1
32
W
Power Dissipation
PD
TO-220F4
TO-251/TO-252
77
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=66mH, IAS=2.4A, VDD=50V, RG=25Ω, Starting TJ = 25°C.
4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F4
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-220F4
TO-251/TO-252
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SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°C/W
110
1.32
°C/W
°C/W
3.9
°C/W
1.62
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
700
Drain-Source Leakage Current
IDSS
VDS=700V, VGS=0V
Forward
VDS=0V ,VGS=+30V
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=250µA
2.5
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
933.7
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
594.7
Reverse Transfer Capacitance
CRSS
52.8
SWITCHING PARAMETERS
32.4
Total Gate Charge (Note 1)
QG
VDS=560V, VGS=10V,
Gate to Source Charge
QGS
9
ID=15A , IG=1mA (Note 1, 2)
Gate to Drain Charge
QGD
11.4
Turn-on Delay Time (Note 1)
tD(ON)
10.6
Rise Time
tR
23.6
VDD=100V, VGS=10V,
I
=15A,
R
=25Ω
(Note
1,
2)
Turn-off Delay Time
tD(OFF)
110.6
D
G
Fall-Time
tF
59.3
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Pulsed Current
IS
Maximum Body-Diode Continuous Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS =15A, VGS=0V
Reverse Recovery Time (Note 1)
trr
410.6
IS =15A, VGS=0V,
dIF/dt=100A/µs
Reverse Recovery Charge
Qrr
13.1
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
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MAX UNIT
10
+100
-100
V
µA
nA
nA
4.5
0.45
V
Ω
pF
pF
pF
45
nC
nC
nC
ns
ns
ns
ns
15
60
1.4
A
A
V
ns
µC
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TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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