UNISONIC TECHNOLOGIES CO., LTD 16N50
Preliminary Power MOSFET
16 Amps, 500 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 16N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
1
TO-220F
FEATURES
* 16A, 500V, RDS(ON)=0.38Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 16N50L-TF3-T 16N50G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F 1 G Pin Assignment 2 3 D S Packing Tube
www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-532.a
16N50
Preliminary
SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous (TC=25°C) Drain Current Pulsed (Note 3) Avalanche Current (Note 3) Single Pulsed (Note 4) Avalanche Energy Repetitive (Note 5) Peak Diode Recovery dv/dt (Note 5) RATINGS UNIT 500 V ±30 V 16 (Note 2) A 64 (Note 2) A 16 A 780 mJ 20 mJ 4.5 V/ns TC=25°C 52 W Power Dissipation PD Derate above 25°C 0.41 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 5. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.4 UNIT °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-532.a
16N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=16A Gate to Source Charge QGS (Note 6, 7) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=16A, RG=25Ω (Note 6, 7) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=16A, VGS=0V Body Diode Reverse Recovery Time tRR IS=16A, VGS=0V, dIF/dt=100A/µs (Note 6) Body Diode Reverse Recovery Charge QRR Notes: 6. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 7. Essentially independent of operating temperature MIN TYP MAX UNIT 500 V 1 µA +100 nA -100 nA 4.0 0.31 0.38 1495 1945 235 310 20 30 32 8.5 14 40 150 65 80 45 V Ω pF pF pF nC nC nC ns ns ns ns A A V ns µC
2.0
90 310 140 170 9.2 37 1.4
490 5.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-532.a
16N50
Gate Charge Test Circuit
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Waveforms VGS QG
Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS
10V QGS
QGD
Charge
Unclamped Inductive Switching Test Circuit VDS RG ID
Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD
10V tP DUT VDD VDD
VDS(t) Time
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-532.a
16N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT RG
+ VDS L ISD
VGS
VDD Driver Same Type as DUT
dv/dt controlled by RG ISD controlled by pulse period
VGS (Driver)
D=
Gate Pulse Width Gate Pulse Period
10V
IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-532.a
16N50
Preliminary
Power MOSFET
U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-532.a
很抱歉,暂时无法提供与“16N50G-TF3-T”相匹配的价格&库存,您可以联系我们找货
免费人工找货