18N50L-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies. FEATURES * 18A, 500V, RDS(ON)=0.265Ω @ VGS=10V * High switching speed * Typically 45nC low gate charge * 100% avalanche tested * Typically 25pF low CRSS * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N50L-TF1-T 18N50G -TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220F1 S: Source 1 G Pin Assignment 2 D 3 S Packing Tube www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-477.b 18N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS ±30 V Continuous ID 18 A Drain Current 72 (Note 6) A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 945 mJ Avalanche Energy Repetitive (Note 1) EAR 23.5 mJ Avalanche Current (Note 1) IAR 18 A Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 38.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJc RATINGS 62.5 3.3 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-477.b 18N50 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS MIN 500 0.5 1 10 100 -100 2.0 4.0 0.220 0.265 25 2200 2860 330 430 25 40 45 12.5 19 55 165 95 90 60 TYP MAX UNIT V V/°C µA µA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns μC VGS=0V, ID=250µA ID=250μA, ΔBVDSS/ΔTJ Referenced to 25°C VDS=500V, VGS=0V IDSS VDS=400V, TC=125°C VGS = 30 V, VDS = 0 V IGSS VGS = -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=9A Forward Transconductance gFS VDS=40V, ID=9A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=400V, VGS=10V, ID=18A Gate-Source Charge QGS (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=250V, ID=18A, Turn-ON Rise Time tR RG=25Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =18A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=18A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 5. Essentially independent of operating temperature 6. Drain current limited by maximum junction temperature 120 340 200 190 18 72 1.4 500 5.4 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-477.b 18N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-477.b 18N50 Gate Charge Test Circuit Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-477.b 18N50 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-477.b