18N60-T47-T

UNISONIC TECHNOLOGIES CO., LTD 18N60 Preliminary Power MOSFET POLARHV HIPERFET POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-247 FEATURES * RDS(ON) ≤ 400mΩ @VGS = 10 V * Ultra low gate charge ( typical 50nC ) * Low reverse transfer capacitance ( CRSS = typical 23pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Lead-free: 18N60L Halogen-free : 18N60G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 18N60-T47-T Ordering Number Lead Free 18N60L-T47-T Halogen Free 18N60G-T47-T Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw 1 of 3 QW-R502-221.Aa Copyright © 2008 Unisonic Technologies Co., Ltd 18N60 PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Preliminary (TC =25℃, unless otherwise specified) Power MOSFET ABSOLUTE MAXIMUM RATINGS SYMBOL RATINGS UNIT VDSS 600 V VGSS ±30 V ID 18 A IDM 45 A IAR 18 A Single Pulsed EAS 1000 mJ Avalanche Energy 30 Repetitive EAR Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 360 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Case SYMBOL θJC MIN TYP MAX 0.35 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Zero Gate Voltage Drain Current IDSS VDS=VDSS, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=0.5ID25 (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=0.5VDSS, ID=ID25, RG=5Ω (External) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VGS=10V, VDS=0.5VDSS, Gate Source Charge QGS ID=0.5ID25 Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V (Note 1) Maximum Continuous Drain-Source IS VGS=0V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Repetitive Forward Current Reverse Recovery Time tRR VGS=0V, di/dt=100A/s, IS=18A, VR=100V Reverse Recovery Charge QRR Note 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. MIN 600 25 ±100 2.0 4.0 400 2500 280 23 21 22 62 22 50 15 18 1.5 18 54 200 0.8 TYP MAX UNIT V µA nA V mΩ pF pF pF ns ns ns ns nC nC nC V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-221.Aa 18N60 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-221.Aa