18N60G-T47-T

UNISONIC TECHNOLOGIES CO., LTD 18N60 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. Power MOSFET 1 TO-247 FEATURES * RDS(ON) ≤ 400mΩ @VGS = 10 V * Ultra Low Gate Charge ( Typical 50nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 23pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N60L-T47-T 18N60G-T47-T Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw 1 of 3 QW-R502-221.D Copyright © 2010 Unisonic Technologies Co., Ltd 18N60 ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 18 A Pulsed Drain Current IDM 45 A Avalanche Current IAR 18 A Single Pulsed EAS 1000 mJ Avalanche Energy 30 Repetitive EAR Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 360 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Case SYMBOL θJC RATINGS 0.35 UNIT °С/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=VDSS, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A (Note) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=10V, VDS=0.5VDSS, Turn-ON Rise Time tR ID=18A, RG=5Ω (External) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VGS=10V, VDS=0.5VDSS, Gate Source Charge QGS ID=9A Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V (Note ) Maximum Continuous Drain-Source IS VGS=0V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Repetitive Forward Current Reverse Recovery Time tRR VGS=0V, dIF/dt=100A/µs, IS=18A, VR=100V Reverse Recovery Charge QRR Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. MIN 600 25 ±100 3.0 5.0 400 2500 280 23 21 22 62 22 50 15 18 1.5 18 54 200 0.8 TYP MAX UNIT V µA nA V mΩ pF pF pF ns ns ns ns nC nC nC V A A ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-221.D 18N60 TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 12 10 8 6 4 2 0 0 800 Source to Drain Voltage,VSD (mV) 200 400 600 1000 Drain Current, ID (A) Drain Current,ID (A) 12 10 8 6 4 2 0 VGS=10V, ID=9.0A Power MOSFET Drain-Source On-State Resistance Characteristics 0 1 2 3 Drain to Source Voltage, VDS (V) Drain Current vs. Drain-Source Breakdown Voltage 4 Drain Current vs. Gate Threshold Voltage 300 50 250 Drain Current,ID (mA) 200 150 100 50 0 0 1 2 3 4 Drain Current,ID (µA) 400 350 300 250 200 150 100 50 0 0 Gate Threshold Voltage,VTH (V) 200 1000 600 800 400 Drain-Source Breakdown Voltage,BVDSS(V) U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-221.D