19N10G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 19N10 Preliminary Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) = 0.1Ω @VGS = 10 V * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( CRSS = typical 32pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness Lead-free: 19N10L Halogen-free: 19N10G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 19N10-TM3-T Ordering Number Lead Free 19N10L-TM3-T Halogen Free 19N10G-TM3-T Package TO-251 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-261.a 19N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ± 25 V Continuous Drain Current ID 15.6 A Pulsed Drain Current (Note 2) IDM 62.4 A Avalanche Current (Note 2) IAR 15.6 A Single Pulsed Avalanche Energy (Note 3) EAS 220 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns Power Dissipation 50 W PD 0.4 W/°C Derate above 25°C Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=1.35mH, IAS=15.6A, VDD=25V, RG=25 Ω, Starting TJ=25°C 4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC RATINGS 110 2.5 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time SYMBOL BVDSS ∆BVDSS / ∆TJ IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF TEST CONDITIONS VGS=0V, ID=250µA ID=250µA, Referenced to 25°C VDS=100V, VGS=0V VGS=25V, VDS=0V VGS=-25V, VDS=0V VDS=VGS, ID=250µA VGS=10V, ID=7.8A VDS=40V, ID=7.8A (Note 1) MIN 100 0.1 1 100 -100 2.0 0.078 11 600 165 32 19 3.9 9.0 7.5 150 20 65 780 215 40 25 4.0 0.1 TYP MAX UNIT V V/°C µA nA V Ω S pF pF pF nC nC nC ns ns ns ns VDS=25V, VGS=0V, f=1.0 MHz VDS=80V, ID=19A, VGS=10V (Note 1, 2) VDD=50V, ID=19A, RG=25Ω (Note 1, 2) 25 310 50 140 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-261.a 19N10 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=15.6A Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR VGS= 0V, IS=19A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% Note: 2. Essentially independent of operating temperature MIN TYP MAX UNIT 1.5 15.6 62.4 78 200 V A A ns nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-261.a 19N10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-261.a 19N10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-261.a 19N10 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-261.a