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1N40G-T92-K

1N40G-T92-K

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    1N40G-T92-K - 1 Amps, 400 Volts N-CHANNEL POWER MOSFET - Unisonic Technologies

  • 数据手册
  • 价格&库存
1N40G-T92-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD 1N40 Preliminary Power MOSFET 1 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. FEATURES * High switching speed * 1.4A, 400V, RDS(ON)=5.8Ω @ VGS=10V * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N40L-TA3-T 1N40G-TA3-T 1N40L-T92-B 1N40G-T92-B 1N40L-T92-K 1N40G-T92-K 1N40L-T92-TR 1N40G-T92-TR Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-92 TO-92 TO-92 1 G G G G Pin Assignment 2 3 D S D S D S D S Packing Tube Tape Box Bulk Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-529.a 1N40 PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT 400 V ±30 V Continuous (TC=25°C) 1.4 A Drain Current Pulsed (Note 1) 5.6 A Avalanche Current (Note 1) 1.4 A Single Pulsed (Note 2) 85 mJ Avalanche Energy Repetitive (Note 1 2.5 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns TO-220 25 W TO-92 2.5 W Power Dissipation PD TO-220 0.2 W/°C Derate above 25°C TO-92 0.02 W/°C Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-92 TO-220 TO-92 SYMBOL θJA θJC RATINGS 62.5 140 5.0 50 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-529.a 1N40 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature △BVDSS/△TJ Reference to 25°C, ID=250µA Coefficient Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.7A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=320V, ID=1.8A Gate to Source Charge QGS (Note 4, 5) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=200V, ID=1.8A, RG=25Ω Rise Time tR (Note 4, 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=1.4A, VGS=0V IS=1.8A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Time tRR (Note 4) Body Diode Reverse Recovery Charge QRR Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 75mH, IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 1.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature MIN TYP MAX UNIT 400 0.4 V V/°C 1 µA +100 nA -100 nA 2.0 4.5 115 20 3 4.0 1.1 2.1 7 30 7 25 4.0 5.8 150 30 4 5.5 V Ω pF pF pF nC nC nC ns ns ns ns A A V ns µC 25 70 25 60 1.4 5.6 1.5 160 0.4 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-529.a 1N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-529.a
1N40G-T92-K 价格&库存

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