1N60

UNISONIC TECHNOLOGIES CO., LTD 1N60 1.2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 Power MOSFET TO- 251 1 TO-252 1 TO-220 FEATURES * RDS(ON) =9.3Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-220F *Pb-free plating product number: 1N60L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating 1N60-TA3-T 1N60L-TA3-T TO-220 1N60-TF3-T 1N60L-TF3-T TO-220F 1N60-TM3-T 1N60L-TM3-T TO-251 1N60-TN3-R 1N60L-TN3-R TO-252 1N60-TN3-T 1N60L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube 1 N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-052,D 1N60 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) SYMBOL VDSS VGSS IAR Power MOSFET RATINGS UNIT 600 V ±30 V 1.2 A TC = 25℃ 1.2 Continuous Drain Current A ID TC = 100℃ 0.76 Drain Current-Pulsed (Note 2) IDP 4.8 A Repetitive(Note 2) EAR 4.0 mJ Avalanche Energy Single Pulse(Note 3) EAS 50 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC=25℃ 40 W Total Power Dissipation PD Derate above 25°C 0.32 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 3. L=64mH, IAS=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C 4. ISD≤1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ =25°C THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient TO-251 TO-252 TO-220 TO-251 TO-252 TO-220 SYMBOL θJA RATINGS 112 112 54 12 12 4 UNIT ℃/W Thermal Resistance Junction-Case θJc ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250Μa VDS = 600V, VGS = 0V VDS = 480V, TC = 125℃ VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V MIN 600 10 100 100 -100 0.4 2.0 9.3 0.9 120 20 3.0 4.0 11.5 TYP MAX UNIT V Μa Μa Na V/℃ V Ω S Pf Pf Pf Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance △BVDSS/ ID = 250Μa △T J VGS(TH) VDS = VGS, ID = 250Μa RDS(ON) VGS = 10V, ID = 0.6A gFS VDS = 50V, ID = 0.6A (Note 1) CISS COSS CRSS VDS=25V, VGS=0V, f=1MHz 150 25 4.0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-052,D 1N60 ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS Switching Characteristics Turn-On Delay Time tD (ON) Rise Time tR VDD=300V, ID=1.2A, RG=50Ω Turn-Off Delay Time tD (OFF) (Note 1,2) Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=1.2A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A, Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR VGS=0V, ISD = 1.2A di/dt = 100A/µs (Note1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 2. Essentially Independent of Operating Temperature MIN Power MOSFET TYP 5 25 7 25 5.0 1.0 2.6 MAX 20 60 25 60 6.0 UNIT ns ns ns ns nC nC nC V A A ns µC 1.4 1.2 4.8 160 0.3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-052,D 1N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-052,D 1N60 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 5 0kΩ 12V 0.2μF 0.3 μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 3mA VG Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-052,D 1N60 TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics V GS 15.0V 10 .0V 8 .0V 7 .0V 6 .5V 6 .0V Bottorm :5.5V Top: Power MOSFET Transfer Characteristics VDS=50V 250μs Pulse Test Drain Current, ID (A) Drain Current, I D (A) 100 100 125℃ 25℃ -40℃ 10 -1 10-2 10 -1 250μs Pulse Test T C=25℃ 10 0 101 10-1 2 4 6 8 10 Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V) On-Resistance vs. Drain Current Drain-Source On-Resistance, R DS(ON) (Ω) Source- Drain Diode Forward Voltage 25 20 15 10 5 0 0.0 0.5 1.0 VGS=10V VGS=20V Reverse Drain Current, IDR (A) 30 TJ=25℃ VGS=0V 250μs Pulse Test 100 125℃ 25 ℃ 1.5 2.0 2.5 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain Current, ID (A) Source-Drain Voltage, VSD (V) Capacitance vs. Drain-Source Voltage 200 Capacitance (pF) Gate Charge vs. Gate-Source Voltage 12 Gate-Source Voltage, VGS (V) 150 Ciss Coss Ciss= CGS+CGD (CDS=shorted) Coss=C DS+CGD Crss=CGD 10 8 6 4 2 0 VDS=120V VDS=300V VDS=480V 100 50 VGS=0V f = 1MHz 10 -1 Crss 0 I D=1.2A 0 1 2 3 4 5 10 0 10 1 VDS, Drain-SourceVoltage (V) Total Gate Charge, QG (nC) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-052,D 1N60 TYPICAL PERFORMANCE CHARACTERISTICS(cont.) Breakdown Voltage vs. Temperature Drain-Source Breakdown Voltage, BVDSS, (Normalized) Power MOSFET On-Resistance vs. Temperature 3.0 Drain-Source On-Resistance, R DS(ON) (Normalized) 1.2 V =0V GS ID=250μA 1.1 2.5 2.0 1.5 1.0 0.5 VGS=10V ID=0.6A 1.0 0.9 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃) Junction Temperature, T J (℃) Max. Safe Operating Area Operation in This Area is Limited by RDS(on) 1.2 Max. Drain Current vs. Case Temperature 1 01 Drain Current, ID (A) 3 Drain Current, ID (A) 100 100μs 1ms 10ms DC 0.9 0.6 10 -1 10 -2 T c=25℃ T J=150℃ Single Pulse 10 0 0.3 10 1 102 10 0.0 25 50 75 100 125 150 Drain-Source Voltage, VDS (V) Case Temperature, T C (℃) Thermal Response Thermal Response, θJC (t) D=0.5 100 0.2 0.1 -1 10 0 .0 2 0.0 5 θJC (t) = 3.13℃/W Max. Duty Factor, D=t1/t2 TJM -TC=PDM×θJC (t) 0 .0 1 PDM Single pulse 10 -4 t1 t2 -2 -1 10 -5 10 -3 10 10 100 101 Square Wave Pulse Duration t1 (sec) , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-052,D 1N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-052,D