1N60A

UNISONIC TECHNOLOGIES CO., LTD 1N60A 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-92 Power MOSFET FEATURES * RDS(ON) =11Ω@VGS = 10V. * Ultra Low gate charge (typical 8.0nC) * Low reverse transfer capacitance (CRSS = 3.0 pF(max)) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 1N60AL SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating 1N60A-T92-B 1N60AL-T92-B TO-92 1N60A-T92-K 1N60AL-T92-K TO-92 1N60A-T92-R 1N60AL-T92-R TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tape Reel 1N60AL-T92-B (1)Packing Type (2)Package Type (3)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) T92: TO-92 (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-091,B 1N60A ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified.) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS Power MOSFET RATINGS UNIT 600 V ±30 V TC = 25℃ 0.5 Continuous Drain Current ID A TC = 100℃ 0.4 Drain Current-Pulsed (Note 2) IDP 2 A Repetitive(Note 1) EAR 3.6 4.0 mJ Avalanche Energy 50 mJ Single Pulse(Note 2) EAS Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC=25℃ 3 W Total Power Dissipation PD Derate above 25°C 25 mW/℃ Operation Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Case-Sink SYMBOL θJA θCS MIN TYP 0.5 MAX 120 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ =25℃, Unless Otherwise Specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Reverse SYMBOL TEST CONDITIONS MIN 600 0.4 1 10 -10 2.0 11 4.0 15 100 20 3 12 11 40 18 8 1.8 4.0 34 32 90 46 10 TYP MAX UNIT V V/℃ µA µA µA V Ω pF pF pF ns ns ns ns nC nC nC BVDSS VGS = 0V, ID = 250µA △BVDSS/ ID = 250µA, referenced to 25℃ △T J VDS = 600V, VGS = 0V IDSS VDS = 480V, TC = 125℃ VGS = 20V, VDS = 0V IGSS VGS = -20V, VDS = 0V VGS(TH) VDS = VGS, ID = 250µA RDS(ON) VGS = 10V, ID = 0.5A CISS COSS CRSS tD (ON) tR tD (OFF) tF QG QGS QGD On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=0.5A, RG=5Ω (Note 4,5) VDS=480V, VGS=10V, ID=0.8A (Note 4,5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-091,B 1N60A ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V, IS = 0.8A, Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR VGS=0V, IS = 0.8A di/dt = 100A/µs Reverse Recovery Charge QRR Note: 1. Repeativity rating: pulse width limited by junction temperature 2. L=92mH, IAS=1.0A, VDD=50V, RG=0Ω, Starting TJ=25℃ 3. ISD≤1.0A, di/dt≤100A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 5. Essentially independent of operating temperature. MIN Power MOSFET TYP MAX 1.6 1.2 4.8 UNIT V A A ns µC 136 0.3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-091,B 1N60A TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-091,B 1N60A TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V Pulse Width ≤ 1μs Duty Factor ≤0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 5 0kΩ 12V 0.2μF 0.3 μF Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 1mA VG Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RG VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-091,B 1N60A TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics V GS 15.0V 10 .0V 8 .0V 0 7 .0V 10 6 .0V 5.5V 5V Bottorm :4.5V Top: Power MOSFET Transfer Characteristics VDS=50V 250μs Pulse Test Drain Current, I D (A) 4.5V Drain Current, ID (A) 10 0 150℃ 25℃ 10 -1 100 250μs Pulse Test TC=25℃ 101 Drain-Source Voltage, VDS (V) 10-1 2 4 6 8 10 Gate-Source Voltage, VGS (V) On-Resistance vs. Drain Current Source- Drain Diode Forward Voltage Drain-Source On-Resistance, R DS(ON) (Ω) 30 25 20 15 10 5 0 VGS=10V VGS=20V Reverse Drain Current, I DR (A) TJ=25 ℃ VGS =0V 250μs Pulse Test 10 0 150℃ 25℃ 0.0 0.5 1.0 1.5 2.0 2.5 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain Current, I D (A) Source-Drain Voltage VSD (V) , Capacitance vs. Drain-Source Voltage 200 CISS COSS 100 CISS=CGS +CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD Gate Charge vs. Gate-Source Voltage 12 Gate-Source Voltage, VGS (V) 10 8 6 4 2 0 0 VDS=480V VDS=300V VDS=120V Capacitance (pF) 150 50 VGS=0V f = 1MHz 10 CRSS 0 10-1 I D=1.0A 2 4 6 8 10 0 10 1 Drain-SourceVoltage, VDS (V) Total Gate Charge, Q G (nC) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-091,B 1N60A TYPICAL PERFORMANCE CHARACTERISTICS(Cont.) Breakdown Voltage vs. Temperature Drain-Source Breakdown Voltage, BVDSS, (Normalized) Power MOSFET On-Resistance vs. Temperature 3. VGS=10V 0 ID=0.5A 2. 5 2. 0 1. 5 1. 0 0. 5 0. 0 -100 -50 1. 1 1. 0 0. 9 0. 8 -100 -50 0 50 100 150 200 Drain-Source On-Resistance, RDS(ON) (Normalized) 1. 2 VGS=0V I D=250μA 0 50 100 150 200 Junction Temperature TJ (℃) , Junction Temperature, TJ (℃) Max. Safe Operating Area Operation in This Area is Limited by RDS(on) Max. Drain Current vs. Case Temperature 1.0 10 1 Drain Current, ID (A) 100 100μs 1m s 10ms Drain Current, ID (A) 3 0.5 10 1 10 2 - Tc=25 ℃ TJ=150℃ Single Pulse 10 0 10 1 102 10 0. 0 25 50 75 100 125 150 Drain-Source Voltage, VDS (V) Case Temperature, TC (℃) Thermal Response Thermal Response, θJC (t) 0.5 100 0.2 0.1 10-1 0 5 0.0 2 0.0 .0 1 θJC (t) = 3.45℃/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t) Single pulse 10-3 10-2 10-1 1 00 101 10-5 10 -4 Square Wave Pulse Duration t1 (sec) , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-091,B 1N60A Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-091,B