1N60AG-x-T92-B

UNISONIC TECHNOLOGIES CO., LTD 1N60A 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. Power MOSFET FEATURES * RDS(ON) =15Ω@VGS = 10V. * Ultra Low gate charge (typical 8.0nC) * Low reverse transfer capacitance (CRSS = 3.0 pF(max)) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N60AL-x-T92-B 1N60AG-x-T92-B 1N60AL-x-T92-K 1N60AG-x-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S Packing Tape Box Bulk www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-091,E 1N60A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.) PARAMETER SYMBOL 1N60A-A 1N60A-B RATINGS 600 650 ±30 0.5 2 50 Power MOSFET UNIT V Drain-Source Voltage VDSS V Gate-Source Voltage VGSS V Continuous Drain Current ID A Pulsed Drain Current (Note 2) IDM A Single Pulse(Note 3) EAS mJ Avalanche Energy Repetitive(Note 2) EAR 3.6 4.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) 3 W PD Derate above 25°C 25 mW/°C Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C 4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA MIN TYP MAX 120 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current 1N60A-A 1N60A-B SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA MIN TYP MAX UNIT 600 650 10 100 -100 0.4 2.0 11 4.2 15 100 20 3 12 11 40 18 8 1.8 4.0 34 32 90 46 10 V V μA nA nA V/°C V Ω pF pF pF ns ns ns ns nC nC nC Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 600V, VGS = 0V Forward VGS = 20V, VDS = 0V IGSS Reverse VGS = -20V, VDS = 0V ID = 250μA △BVDSS/△TJ referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD (ON) tR tD (OFF) tF QG QGS QGD VDS = VGS, ID = 250μA VGS = 10V, ID = 0.5A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=0.5A, RG=5Ω (Note 1,2) VDS=480V, VGS=10V, ID=0.8A (Note 1,2) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-091,E 1N60A ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS=0V, ISD = 1.2A di/dt = 100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. MIN Power MOSFET TYP MAX 1.6 1.2 4.8 UNIT V A A ns μC 136 0.3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-091,E 1N60A TEST CIRCUITS AND WAVEFORMS + VDS + L Power MOSFET D.U.T. RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-091,E 1N60A TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD VDS VGS RG 10% tD(ON) tR Power MOSFET VDS 90% 10V Pulse Width≤ 1μs Duty Factor≤0.1% D.U.T. VGS tD(OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 12V 50kΩ 0.2μF VGS 0.3μF Same Type as D.U.T. VDS 10V QGS QG QGD DUT 1mA VGS Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDD VDS(t) tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-091,E 1N60A TYPICAL CHARACTERISTICS Output Characteristics VGS Top: 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5V Bottorm:4.5V Power MOSFET Transfer Characteristics VDS=50V 250μs Pulse Test 100 Drain Current, ID (A) 4.5V Drain Current, ID (A) 100 10-1 100 250μs Pulse Test TC=25°C 101 Drain-Source Voltage, VDS (V) On-Resistance vs. Drain Current TJ=25°C Reverse Drain Current, IDR (A) 10-1 2 4 6 8 Gate-Source Voltage, VGS (V) Source- Drain Diode Forward Voltage VGS=0V 250μs Pulse Test 10 Drain-Source On-Resistance, RDS(ON) (Ω) 30 25 20 15 10 5 0 VGS=10V VGS=20V 100 10-1 0.0 0.5 1.5 1.0 Drain Current, ID (A) 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) 1.6 200 Capacitance vs. Drain-Source Voltage CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD 12 Gate-Source Voltage, VGS (V) 10 8 6 4 2 0 Gate Charge vs. Gate-Source Voltage VDS=480V VDS=300V VDS=120V 150 Capacitance (pF) CISS COSS 100 50 VGS=0V f = 1MHz 10 -1 CRSS 0 ID=1.0A 0 2 6 4 8 Total Gate Charge, QG (nC) 10 10 10 Drain-SourceVoltage, VDS (V) 0 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-091,E 1N60A TYPICAL CHARACTERISTICS (Cont.) Breakdown Voltage vs. Temperature Drain-Source Breakdown Voltage, BVDSS, (Normalized) 1.2 Drain-Source On-Resistance, RDS(ON) (Normalized) VGS=0V ID=250μA 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 0 100 150 -50 50 Junction Temperature, TJ (°C) 200 -100 Power MOSFET On-Resistance vs. Temperature VGS=10V ID=0.5A 1.1 1.0 0.9 0.8 -50 50 100 150 0 Junction Temperature, TJ (°C) 200 Max. Safe Operating Area Operation in This Area is Limited by RDS(on) Drain Current, ID (A) 100μs 100 1ms 10ms 1.0 Max. Drain Current vs. Case Temperature 10 Drain Current, ID (A) 1 0.5 10-1 Tc=25°C TJ=150°C Single Pulse 100 101 102 Drain-Source Voltage, VDS (V) Thermal Response 103 10-2 0.0 25 50 125 100 75 Case Temperature, TC (°C) 150 Thermal Response, θJC (t) 0.5 10 0 0.2 0.1 0.0 5 θJC (t) = 3.45°C/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t) 10 -1 2 0.0 1 0.0 Single pulse 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-091,E 1N60A Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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